朱颢青年研究员博士生导师
电话：**
邮箱：hao_zhu@fudan.edu.cn
地址：复旦大学邯郸校区微电子学楼316室
研究所：微纳电子器件研究所
研究方向：
CMOS器件工艺等基础和应用领域
新型集成电路逻辑与存储器件
新型低维材料的生长与材料物性
智能传感器件与系统设计
低功耗电路与系统


Research Interests：
Modern nanoelectronics materials and devices
CMOS technology, novel logic and memory devices and circuits
Smart sensing device and technology
Ultra-low power circuits and systems
Low-dimensional materials and novel electronic devices


学术经历：
2016年10月复旦大学微电子学院，青年研究员
2011年-2016年美国国家标准与技术研究院（NIST），Guest Scientist
2013年12月美国George Mason University, Ph.D. in Electrical Engineering
2010年6月南京大学，凝聚态物理，硕士
2007年6月南京大学，物理学，学士


Recent PublicationsGoogle Scholar with a full list of publications with citations


D.-H. Zhao, Z.-L. Tian, H. Liu. Z.-H. Gu, H. Zhu*, L. Chen, Q.-Q. Sun*, D. W. Zhang, Realizing an Omega-Shaped Gate MoS2 Field-Effect Transistor Based on a SiO2/MoS2 Core-Shell Heterostructure. ACS Applied Materials & Interfaces 12, 14308 (2020).
X. Jiang, M. Zhang, L. Liu, X. Shi, Y. Yang, K. Zhang, H. Zhu*, L. Chen*, X. Liu*, Q. Sun, D. W. Zhang, Multifunctional black phosphorus/MoS2 van der Waals heterojunction. Nanophotonics 9, 2487 (2020).
Y. Wang, Y. Yang, Z. He, H. Zhu*, L. Chen*, Q. Sun, D. W. Zhang, Laterally Coupled 2D MoS2 Synaptic Transistor with Ion Gating. IEEE Electron Device Letters 41, 1424 (2020).
M. Zhang, Z. Fan, X. Jiang, H. Zhu*, L. Chen*, Y. Xia*, J. Yin, X. Liu, Q. Sun, D. W. Zhang, MoS2-based Charge-trapping synaptic device with electrical and optical modulated conductance. Nanophotonics 9, 2475 (2020).
X. Jiang, X. Shi, M. Zhang, Y. Wang, Z. Gu, L. Chen, H. Zhu*, K. Zhang*, Q. Sun*, D. W. Zhang, A Symmetric Tunnel Field-Effect Transistor Based on MoS2/Black Phosphorus/MoS2 Nanolayered Heterostructures. ACS Applied Nano Materials 2, 5674 (2019).
H. Zhu*, C. A. Richter, S. Yu, H. Ye, M. Zeng, Q. Li*, Observation and control of the anomalous Aharonov-Bohm oscillation in enhanced-mode topological insulator nanowire field-effect transistors. Applied Physics Letters 115, 073107 (2019).
T. Zhang, H. Liu, Y. Wang, H. Zhu*, L. Chen, Q. Sun*, D. W. Zhang, Fast-Response Inverter Arrays Built on Wafer-Scale MoS2 by Atomic Layer Deposition. Physica Status Solidi-Rapid Research Letters 13, ** (2019).
M. Zhang, H. Li, J. Xu, H. Zhu*, L. Chen, Q. Sun, D. W. Zhang, High-Performance ReS2 FET for Optoelectronics and Flexible Electronics Applications. IEEE Electron Device Letters 40, 123 (2019).
Z.-L. Tian, D.-H. Zhao, H. Liu, H. Zhu*, L. Chen, Q.-Q. Sun*, D. W. Zhang, Optimization of Defects in Large-Area Synthetic MoS2 Thin Films by CS2 Treatment for Switching and Sensing Devices. ACS Applied Nano Materials 2, 7810 (2019).
T. Zhang, Y. Wang, J. Xu, L. Chen, H. Zhu*, Q. Sun*, S. Ding, D. W. Zhang, High performance few-layer MoS2 transistor arrays with wafer level homogeneity integrated by atomic layer deposition. 2D Materials 5, 015028 (2018).
X.-R. Nie, M. Zhang, H. Zhu*, L. Chen, Q.-Q. Sun, D. W. Zhang, Thickness Dependence of Low-Frequency Noise in MoS2 Field-Effect Transistors with Enhanced Back-Gate Control. IEEE Electron Device Letters 39, 739 (2018).
J. Xu, S.-Y. Jiang, M. Zhang, H. Zhu*, L. Chen, Q.-Q. Sun*, D. W. Zhang, Ferroelectric HfZrOx-based MoS2 negative capacitance transistor with ITO capping layers for steep-slope device application. Applied Physics Letters 112, 103104 (2018).