高建军 校****
物理与电子科学学院??????


导航
个人资料
研究方向
开授课程
科研项目
学术成果
荣誉及奖励







个人资料
部门： 物理与电子科学学院
毕业院校：
学位： 博士
学历：
邮编：
联系电话：
传真：
电子邮箱： jjgao@ee.ecnu.edu.cn
办公地址： 信息楼213
通讯地址： 上海市东川路500号 200241

教育经历

工作经历

个人简介

社会兼职
中国电子学会高级会员‚IEEE高级会员(Senior Member IEEE)‚中国科学院微电子研究所客座研究员。
是下列重要国际国内学术刊物的审稿人：
IEEE Transaction on Microwave Theory and Techniques
IEEE Microwave Wireless Component Letters
IET Microwave Antenna and Propagation
IEEE Journal of Quantum Electronics
<<电子学报>> （英文版）
<<科学通报>>（英文版）
<<半导体学报>> （英文版）


研究方向
微波有源无源器件建模技术
光电子器件建模技术
微波射频测试技术

开授课程


科研项目


学术成果
专著 4 部
1. Jianjun Gao‚ “RF and Microwave Modeling and Measurement Techniques for Field Effect Transistor” SciTech Publisher‚ 2009 USA(英文专著‚350页 )
2. Jianjun Gao‚ “ Optoelectronic Integrated Circuit Design and Device Modeling‚” John Wiley 2010 (英文专著‚will be published)
3. 高建军著《场效应晶体管射频微波建模技术》电子工业出版社2007
4. 高建军著《高速光电子器件建模及光电集成电路设计技术》高等教育出版社 2009
编著 1 部
《微波射频测量技术基础》机械工业出版社2007

译著 2 部
《射频与微波工程实践导论》电子工业出版社 2009
《半导体器件：计算和电信中的应用》华章出版社 2010

IEEE 权威刊物10篇
1. Jianjun Gao‚“An Analytical Method to Determine Small-Signal Model Parameters for Vertical-Cavity Surface Emitting Lasers”IEEE/OSA Journal of Lightwave Technique‚ vol.28‚ no.9‚ pp.1332-1337‚ 2010
2. Jianjun Gao‚ andAndreas Werthof‚ “Scalable Small Signal and Noise Modeling for Deep Submicron MOSFETs”IEEE Trans. Microwave Theory Techniques vol.59‚ no.4‚ pp737-744‚ 2009
3. Jianjun Gao‚ “Microwave Modeling and Parameter Extraction Method for Quantum-Well Lasers‚”IEEE/OSA Journal of Lightwave Technique‚ vol.26‚ no.14‚ pp.2245-2251‚ 2008
4. Jianjun Gao ‚ X.Li‚ “A Semi-analytical Method to Determine Parasitic Elements of Quantum-Well Laser‚” IEEE/OSAJournal of Lightwave Technique ‚ vol.25‚ No.10pp3078-3081‚ 2007
5. Jianjun Gao ‚ X.Li‚ HongWang‚ Georg Boeck‚ “An approach to Determine Small signal model parameters for InP-based Heterojunction Bipolar Transistors‚” IEEE Trans. Semiconductor Manufacturing‚ Vol.19 No.1‚ pp138-145. 2006
6. Jianjun Gao and Georg Boeck “Relationships Between Common Source‚ Common Gate‚ and Common Drain FETs‚” IEEE Trans. Microwave Theory Techniques‚ vol.53‚ no.12 p3825-3831‚ 2005
7. Jianjun Gao ‚ X.Li‚ HongWang‚ Georg Boeck‚ “Direct Extraction Noise Parameters for InP HBT Based on Noise Figure Measurement System‚” IEEE Trans. Microwave Theory Technology Vol.53‚ no.1 p330-335‚ 2005
8. Jianjun Gao‚ X.Li‚ Jens flucke‚ Georg Boeck‚ “Direct Parameter-Extraction method for Laser Diode Rate Equation Model‚” IEEE/OSAJournal of Lightwave Technique ‚ vol.22‚ No.6pp1604-1609‚ 2004
9. Jianjun Gao‚ X.Li‚ HongWang‚ Georg Boeck‚ “Microwave Noise modeling for InP/InGaAs HBTs‚” IEEE Trans. Microwave Theory Technique‚ Vol.52‚ No.4‚ pp.1264–12722004
10. JianjunGao‚ C L Law‚ H wang‚ S Aditya‚ Georg Boeck ‚ “A New Method for PHEMT Noise Parameter Determination Based on 50-Noise Measurement System” IEEE Trans. Microwave Theory TechniquesVol.51 No.10‚ pp.2079-2089‚ 2003

IET刊物 3篇
1. Jianjun Gao and Andreas Werthof‚ “Direct Parameter Extraction method for Deep Submicrometer MOSFET Small Signal Equivalent Circuit‚” IET Proceedings - Microwaves‚ Antennas and Propagation‚ vol.3‚ no.4‚ pp564-571‚ 2009
2. Jianjun Gao ‚ X.Li‚ HongWang‚ Georg Boeck “An Improved Analytical Method for Determination of Small Signal Equivalent Circuit Model Parameters for InP/InGaAs HBTs‚” IEE Proceedings - Circuit‚Device and Systemvol.152‚ no.6 pp661-666. 2005
3. Jianjun Gao ‚ X.Li‚ HongWang‚ Georg Boeck‚ “An Approach for Determination of Extrinsic Resistances for Metamorphic InP/InGaAs HBTs Equivalent Circuit Model.” IEE Proceedings - Microwaves‚Antennas and Propagationvol.152‚ no.2 pp195-200‚ 2005

国际杂志 25 篇
1．Jianjun Gao‚ “High Frequency Modeling for Quantum-well laser diodes” ‚ Chinese Science Bulletin‚ vol.54‚ no.20‚ pp3633-3638‚ 2009
2．X.Li‚ Jianjun Gao and Georg Boeck‚ “Relationships between Common Emitter‚ Common Base and Common Collector HBTs‚” Microwave Journal‚ vol.52‚ no.2‚ pp.66-78‚ 2009
3．X. Li‚ J.Gao‚ Q-J.Zhang “Microwave Noise Modeling for PHEMT Using Artificial Neural Network Technique‚” International Journal of RF and Microwave Computer-Aided Engineering‚ vol.19‚ no.8‚ pp187-196. 2009
4．Qian Wang and Jianjun Gao‚ “An approach for determination of MOSFET small signal model” Microwave Journal‚ vol.51‚ vol.10‚ pp128-136. 2008
5．X. Li and Jianjun Gao ‚ “PAD modeling by using artificial neural network‚” Progress In Electro-magnetics Research‚ PIER 74‚ 167–180‚ 2007
6．X. Li‚ Jianjun Gao and Georg Boeck‚ “Printed Dipole Antenna Design by Artificial Neural Network Modeling for RFID Application‚” International Journal of RF and Microwave Computer-Aided Engineering‚ Vol.16‚ No.6‚ 607-611 2006.
7．X. Li‚ Jianjun Gao “PHEMT modeling by using neural network technique”IOPSemiconductor. Science Technology‚ 21(5):833–840. 2006
8．X.Li‚ Jianjun Gao and Georg Boeck‚ “Microwave Noise Modeling for A1GaAs/InGaAs/GaAs PHEMTs ”‚ Microwave Journal‚ Dec. 94-106‚2006
9．J. Gao‚ X.Li‚ HongWang‚ Georg Boeck‚ “A new method for determination of parasitic capacitances for PHEMTs‚” Institute of Physics.Semiconductor Science Technology. 20 pp586–591. 2005
10．Jianjun Gao ‚ “An approach for determining PHEMT small-signal circuit model parameters up to 110GHz‚” International Journal of Infrared and Millimeter Wavesvol.16‚ no.7‚ 2005pp1017-1029
11．X.Li‚ J.Gao‚ Yook JG ”An equivalent circuit parameters extraction technique for bandpass filters‚” International Journal of Electronics 92 (5): 303-311 May 2005
12．X.Li‚ Jianjun Gao‚ Yook Jonggwan and Xu Xiaowen‚ “An Approach for Minimum Insertion Loss Bandpass Filter Design‚” Chinese Journal of Electronics‚ Vol. 2‚ 370-372‚2005
13．Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “PIN PD Microwave Equivalent Circuit Model for Optical Receiver Design "‚ Microwave and Optical TechnologyLetters v38‚n2‚102-104‚ 2003
14．Jianjun Gao‚C L Law‚H wang‚ S Aditya “A Submicron PHEMT Nonlinear Model Suitable for Low Current Amplifier Design” Int. Journal of Electronics Vol.90‚ No.7‚ pp.433-443‚ 2003
15．Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang. “Large signal model of quantum-well lasers for spice”‚Microwave and Optical Technology Letters‚ vol.39‚ Issue4‚ Nov‚pp:295-298‚ 2003
16．X.P.Li‚ Jianjun Gao‚ C.L.Law‚ A.Sheel‚ Georg Boeck‚ “An Improved On-wafer Measurement Method for PHEMT Modeling or millimeter wave applications‚” International Journal of Infrared and Millimeter WavesNumber 10‚ pp1759-1766 2003
17．X.Li‚ Jianjun Gao‚ C.L.Law‚ A.Sheel‚ “An Approach for Microprobe Measurement and Modeling for Millimeter-wave Application‚”‚ International Journal of Infrared and Millimeter WavesNumber 10‚ pp1709-1718‚ 2003
18．Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “An improved HEMT noise model for optical preamplifier design"‚ Microwave and Optical Technology Letters2001(1)‚v27‚n5‚pp26~28
19．Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “A small-signal equivalent- circuit model of quantum-well lasers based on three-level rate equations"‚ Microwave and optical Technology Letters 2001‚v30‚n4‚ pp270~271.
20．Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “An Approach to Determining ParasiticElements for Laser Diodes "‚ Microwave and Optical TechnologyLetters2002‚ v34‚n3‚ pp191~193.
21．Jianjun Gao‚C L Law‚H wang‚ S Aditya. “ An approach for extracting small signal equivalent circuit of double heterojunction δ-doped PHEMTs for millimeter wave applications‚” International Journal of Infrared and Millimeter Waves Volume 23‚ Number 3‚ March‚ pp.345~364. 2002.
22．Jianjun Gao‚ C L Law‚ H Wang ‚ S Aditya “An Approach to Linear Scalable DH-PHEMT Model” International Journal of Infrared and Millimeter WavesVolume 23‚ Number 12‚ Dec. 1787-1801. 2002.
23．Jianjun Gao‚C L Law‚H wang‚ S Aditya“An Improved Pinchoff Equivalent Circuit Model for Determining Small-signal Model Parameters of Double Heterojunction-doped pHEMTs” International Journal of Infrared and Millimeter WavesVolume 23‚ Number 11‚ Nov‚ pp.1611~1626. 2002
24．Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “Model device parameters for a 10-Gb/s HEMT modulator driver IC” "‚ Microwave and Optical TechnologyLetters2002‚ v35‚n5‚ pp357~360.
25．Jianjun Gao‚ Baoxin Gao‚ Chunguang Liang‚ “Modeling of MSM PD for SPICE"‚ Microwave and Optical Technology Letters 2000(9)‚ v26‚n6‚ pp390~394.

国际会议9 篇
1. J.Gao‚ X. Li‚ “Microwave modeling and parameter extraction method for PHEMT‚” Microwave and Millimeter Wave Technology‚ 2008. ICMMT 2008. International Conference on Volume 3‚ 21-24 April 2008 Page(s):1323 – 1326
2. Jianjun Gao‚ X.Li‚ Q-J Zhang‚ “Microwave noise modeling for HEMT” Asia Pacific Microwave Conference 2006 Japan
3. Jianjun Gao‚ Lei Zhang‚ Jianjun Xu‚ Q-J Zhang‚ “Nonlinear HEMT Modeling Using Artificial Neural Network Technique‚” IEEE International Microwave Symposium Digest‚ IMS2005 pp469-472
4. S. Ling‚ Gao Jianjun. A Method for On-Wafer S-Parameter Measurement of a Differential Amplifier by Using Two-Port Network Analyzer. Asia Pacific Microwave Conference 2005.12‚ pp3088-3091
5. X.Li‚ Jianjun Gao‚ C.L.Law‚ A.Sheel‚ “An Approach to Band-pass Filters Design for RFID Application.PIERS 2003‚Singapore‚ 7-10 Jan‚ 2003‚ 71
6. X.P.Li‚ Jianjun Gao‚ C.L.Law‚ A.Sheel‚ “An Approach for Microprobe Measurement and Modeling for Millimeter-wave Application‚” 2003 IEEE AP-S International Symposium on Antennas and Propagation Columbus‚ Ohio‚ USA on June 22-27‚ 2003
7. X.Li‚ Jianjun Gao‚ Choi Look Law‚ Sheel Aditya‚ Georg Boeck An improved On-wafer Measurement Method for PHEMT Modeling by Using Coaxial Calibration‚”Asia-Pacific Microwave Conference Nov‚ 2003‚ vol.1‚580-583
8. Jianjun Gao‚ X.Li‚ H.Yang‚ H.Wang‚ G.Boeck‚ “An Approach to Determine and for InP HBT Using Cutoff Mode Measurement‚” European Microwave Week‚ GAAS Conference 2003‚ pp145-147
9. Jianjun Gao‚ Xiuping Li‚ Hong Wang‚ George Boeck‚ "An Empirical All Region Current Based PHEMT DC Model” International Microwave and Optoelectronics Conference 2003 pp.99-101 IEE-MTTS/IMOC2003 Brazil

国内期刊34 篇
1. Sun Ling‚ GaoJianjun. Relationship Between Noise Figure and Equivalent Input Noise Current Spectral Density for Optical Receiver Design. Chinese Journal of Semiconductor‚ 2006‚ 27(12):2085-2088
2. 高建军‚“量子阱激光器高频建模研究”‚科学通报‚ vol.54‚ no.10‚ ‚ pp3083-3088‚ 2009
3. 黄亚森‚高建军. “RF MOSFET噪声模型研究 ‚” 固体电子学研究与进展‚ 2008‚ 04: 511-515
4. 张益昕‚ 高建军. “垂直腔体面发射激光器等效电路模型在SPICE下的实现”固体电子学研究与进展‚ 2007‚ 04: 562-567
5. 王永利‚ 高建军‚ “一种改进的用于SiGe HBT的焊盘模型参数提取技术‚” 固体电子学研究与进展‚ 2007年第04期pp493-497
6. 王永利‚王倩‚黄亚森‚ 梁锋‚高建军‚ “基于BiFET结构的宽带低噪声放大器设计” ‚ 电子器件‚ 31卷‚ 第二期‚ 596－599
7. 韩鹏‚孙玲‚ 高建军 . “155Mb/s光通信用CMOS自动增益控制跨阻前置放大器.” 电子学报‚ 2007‚ 35 (11): 2189-2192
8. 孙玲‚ 高建军. “跨阻放大器S参数与跨阻增益间的关系.” 固体电子学研究与进展‚ 2006‚ 01: 85-90
9. 梁锋. 高建军 “垂直腔面发射激光器的温度模型” 半导体学报‚ vol.27‚ No.7 1125-1129‚ 2006
10. 蔡水成‚ 高建军 “10Gb/s 0.2 um GaAsPHEMT 跨阻放大器分析和设计” 半导体学报‚vol.27‚ No.7 1808-1813‚ 2006
11. 高建军‚高葆新‚梁春广. “高速低阈值半导体激光器速率方程模型参数的直接确定”固体电子学研究与进展‚2002年01期‚pp127~130
12. 王延锋‚高建军‚吴德馨. “10～40Gb/s OEIC光接收机前端的最新研究进展” ‚ 半导体技术‚2002年03期‚ pp60~63
13. 张龙海‚高建军‚刘训春. “光纤通信高速电路研究进展”半导体技术‚ 2001年07期pp23~26
14. 高建军‚高葆新‚吴德馨. “2.5~10Gb/s光发射机驱动电路HEMT IC中器件模型参数”半导体学报‚ 2001年06期 ‚ pp800-805
15. 高建军‚高葆新‚梁春广. “改进的HEMT器件噪声等效电路模型” 清华大学学报(自然科学版) 2001年07期‚ pp5~8
16. 冯威‚ 高建军. “光电集成电路的CAD系统”半导体情报‚2000年01期‚ pp46~50
17. 高建军‚袁志鹏‚吴德馨. “2.5～10Gb/s HEMT IC全耗尽型光驱动电路中器件性能的研究”功能材料与器件学报‚ 2000年03期‚pp145-148
18. 高建军‚ 高葆新‚ 梁春广. “一个简单的量子阱激光器等效电路模型”固体电子学研究与进展 ‚ 1999年03期. pp314~320
19. 高建军‚高葆新‚梁春广. “OEIC跨阻光接收机中电感技术的研究” 清华大学学报(自然科学版) 1999年09期‚pp72~75
20. 高建军‚高葆新‚ 梁春广. “一个金属-半导体-金属光电探测器等效电路模型” 电子科学学刊‚ 1999年04期‚pp543~548
21. 高学邦‚高建军‚吴洪江. “微波功率电路的热电耦合CAD研究” 电子学报‚ 1998年02期 ‚ pp6~10
22. 高建军‚ 高葆新‚梁春广. “光电器件模型在微波非线性电路模拟器中的实现”通信学报 ‚ 1998年02期‚ pp73~79
23. 高建军‚高葆新‚梁春广. “ PIN光电探测器等效电路模型研究” 微波学报 1998年01期 pp29-34
24. 高建军‚ 高葆新‚ 梁春广.“单模半导体激光器噪声特性预测”电子科学学刊‚ 1998年05期‚ pp676~681
25. 高建军‚ 梁成. “受相干反射波影响的单模半导体激光器非线性失真特性预测”固体电子学研究与进展 1997年01期 P21~25
26. 高学邦‚高建军.“GaAs FET大信号模型与参数提取”半导体情报1997年05期 P1-5‚P9
27. 高建军‚梁春广. “2．5Gb／s　PIN-HEMT光接收机噪声精确模拟”电子学报 1996年11期‚ P115-118
28. 高建军‚梁春广. “偏置相关GaAs　MESFET建模分析” 半导体情报‚ 1996年02期‚ pp 34~37
29. 高建军.“非线性电路模拟程序中GaAs MESFET器件噪声因子的修正” 半导体技术 1995年02期P23~25
30. 高建军.“PSPICE程序使用功能的扩展” 半导体情报‚ 1995年06期pp41~44
荣誉及奖励


招生信息














10 访问


相关教师