邓小川 邮箱：xcdeng@uestc.edu.cn
电话：
系别：微电子与固体电子系
职称：教授
教师个人主页：http://faculty.uestc.edu.cn/dengxiaochuan


教师简介
教育背景
2004.09－2008.06 电子科技大学，微电子学专业，博士学位

工作履历
2008.06－2017.12 电子科技大学，微电子与固体电子学院
2018.01－ 电子科技大学，电子科学与工程学院

学术兼职
中国仿真学会集成微系统建模与仿真专委会 委员
科学研究
代表性论文


1. Xiaochuan Deng, Hao Zhu, Xuan Li, Xing Tong, Shufeng Gao, Yi Wen, Song Bai, Wanjun Chen, Kun Zhou, and Bo Zhang, Investigation and Failure Mode of Asymmetric and Double Trench SiC MOSFETs Under Avalanche Conditions, IEEE Transactions on Power Electronics, 35(8):8524-8531, 2020.(一区，top)
2. Xiaochuan Deng, Xu Li, Xuan Li, Hao Zhu, Xiaojie Xu, Yi Wen, Yongkui Sun, Wanjun Chen, Zhiqiang Li and Bo Zhang, Short-circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs, IEEE Transactions on Power Electronics, 36(7):8300-8307, 2021.(一区，top)
3. Ximing Chen, Xuan Li, Bangbing Shi, Junmiao Xiang, Yuanzhuo Dai, Chenzhan Li, Xiaochuan Deng, Haihui Luo, Yudong Wu, and Bo Zhang, Deep Understanding of Negative Gate Voltage Restriction for SiC MOSFET under Wide Temperature Range, IEEE Transactions on Power Electronics, 36(8):8622-8627, 2021.(一区，top)
4. Xiaochuan Deng, Xiaojie Xu, Xuan Li, Xu Li, Yi Wen, Wanjun Chen, A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance, IEEE Electron Device Letters, 41(10): 1472-1475, 2020.(二区)
5. Xiaochuan Deng, Liping Yang, Yi Wen, Xuan Li, Fei Yang, Hao Wu, Houhua Cao, Juntao Li, Wanjun Chen, Bo Zhang, Experimental study and characterization of an ultrahigh-voltage Ni/4H–SiC junction barrier Schottky rectifier with near ideal performances, Superlattices and Microstructures, 138:106381, 2020.(三区)
6. Xuan Li, Xing Tong, Rui Hu, Yi Wen, Hao Zhu, Xiaochuan Deng, Yongkui Sun, Wanjun Chen, Song Bai, Bo Zhang, Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET, IEEE Journal of Emerging and Selected Topics in Power Electronics, 9(2):2147-2154, 2021.(二区)
7. Xiaochuan Deng, Shufeng Gao, Ben Tan, Juntao Li, Xuan Li, Chengzhan Li, Wanjun Chen, Zhaoji Li, Bo Zhang, Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges, IEEE Journal of Emerging and Selected Topics in Power Electronics, 7(3): 1505-1512, 2019.(二区)
8. Xuan Li, Xu Li, Pengkun Liu, Suxuan Guo, Liqi Zhang, Alex Huang, Xiaochuan Deng, Bo Zhang, Achieving Zero Switching Loss in Silicon Carbide MOSFET, IEEE Transactions on Power Electronics, 34(12): 12193-12199, 2019.(一区，top)
9. Xuan Li, Ben Tan, Alex Q. Huang, Bo Zhang, Yumeng Zhang, Xiaochuan Deng, Zhaoji Li, Xu She, Fangzhou Wang, and Xing Huang, Impact of Termination Region on Switching Loss for SiC MOSFET, IEEE Transactions on Electron Devices, 2019, 66(2): 1026-1031.(三区)
10. Xiaochuan Deng, Lijun Li, Jia Wu, Chengzhan Li, Wanjun Chen, Juntao Li, Zhaoji Li; Bo Zhang, A Multiple-Ring-Modulated JTE Technique for SiC Power Device With Improved JTE-Dose Window, IEEE Transactions on Electron Devices, 2017, 64(12): 5042-5047.

11. Xuan Li, Xing Tong, Alex Q. Huang, Hong Tao, Kun Zhou, Yifan Jiang, Junning Jiang, Xiaochuan Deng, Xu She, Bo Zhang, Yourun Zhang, and Qi Tian, SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode, IEEE Transactions on Electron Devices, 2018, 65(1): 347-351.
12. Xiaochuan Deng, Xixi Chen, Dongdong Liu, Kunyuan Liang, Zhi Gan, Zhaoji Li, and Bo Zhang, An Accumulation Mode RF Laterally Double Diffused MOSFET With Improved Performance, IEEE Electron Device Letters, 2016, 37(10): 1321-1323.
13. Xiaochuan Deng, Yuanxu Guo, Tianxiang Dai, Chengzhan Li, Ximing Chen, Wanjun Chen, Yourun Zhang and Bo Zhang, A robust and area-efficient guard ring edge termination technique for SiC power MOSFETs, Materials Science in Semiconductor Processing, 68C:108-113, 2017.
14. Xuan Li, Junning Jiang, Alex Q. Huang, Suxuan Guo, Xiaochuan Deng, Bo Zhang and Xu She, A SiC Power MOSFET Loss Model Suitable for High Frequency Applications, IEEE Transactions on Industrial Electronics, 2017,64(10):8268-8276.






主讲课程
研究方向
1、宽禁带半导体碳化硅功率半导体技术
高压大电流宽禁带半导体碳化硅(SiC)功率器件理论、模型和新结构研究，包括：SiC IGBT、SiC MOSFET、SiC功率整流器以及功率模块等。
2、大功率射频半导体器件技术
超大功率Si基RF LDMOS器件和SiC基微波固态功率器件设计、模型与新结构研究。

研究条件
完整的器件与集成电路设计平台（Cadence，Silvaco，Senturus，Taurus Medici，Hspice，Sabe等）
0.45mm微细加工平台