程骏骥 邮箱：chengjunji2005@126.com
电话：
系别：微电子与固体电子系
职称：副教授
教师个人主页：http://faculty.uestc.edu.cn/chengjunji/zh_CN/index.htm


教师简介
教育背景
2007.09－2013.12 电子科技大学，微电子学专业，博士学位
2003.09－2007.06 电子科技大学，集成电路设计与集成系统专业，学士学位
工作履历
2014.01－至今 电子科技大学，微电子与固体电子学院，讲师
科学研究
研究方向
主要研究新型电力电子技术，包括功率高压半导体器件、智能功率集成电路、新材料功率器件，微电子半导体器件工艺与原理等。从事高频电路、通信电子线路的教学工作。
学术成果
代表性论文：
1、Junji Cheng, Xingbi Chen. A practical approach to enhance yield of OPTVLD products[J]. IEEE Electron Device Lett., Feb. 2013, 34(2): 289-291
2、Junji Cheng, Xingbi Chen. A new planar junction edge termination technique using OPTVLD with a buried layer[J]. IEEE Trans. on Electron Devices, July 2013, 60(7): 2428-2431
3、Junji Cheng, Xingbi Chen. Hot-carrier reliability in OPTVLD-LDMOS[J]. Journal of Semiconductors, 2012, 33(6): 064003
4、Junji Cheng, Xingbi Chen. Low specific on-resistance p-type OPTVLD LDMOS with double hole-conductive paths for SPIC application[C]. IEEE ISPSD, Bruges, 2012, Late News Paper, 225-228
5、Junji Cheng, Xingbi Chen. A novel low-side structure for OPTVLD-SPIC technologically compatible with BiCMOS[C]. IEEE ISPSD, Japan, 2013, 123-126
6、Ping Li; Xinjiang Lyu; Junji Cheng; Xingbi Chen. A Low On-State Voltage and Saturation Current TIGBT With Self-Biased pMOS.IEEE Electron Device Letters. Year: 2016, Volume: 37, Issue: 11, Pages: 1470 – 1472.
7、Bo Yi; Junji Cheng; Xing Bi Chen. A High-voltage “Quasi-p-LDMOS” using Electrons as Carriers in Drift Region Applied for SPIC. IEEE Transactions on Power Electronics. Year: 2017, Volume: PP, Issue: 99. Pages: 1 – 1.
8、Lixiao Liang; Xinjiang Lyu; Junji Cheng; Xing Bi Chen. Multilevel Low-Voltage Power Supplies Capable of Integrating With High-Voltage Devices. IEEE Transactions on Electron Devices. Year: 2017, Volume: 64, Issue: 8. Pages: 3269 – 3274.
9、Ping Li; Junji Cheng; Xingbi Chen. A low on-state voltage and saturation current TIGBT with integrated Zener diode.IEEE Electronics Letters. Year: 2017, Volume: PP, Issue: 99.
10、Deng,Jing; Cheng, Junji; Chen, Xingbi.An Improved SOI P-channel LDMOS with High-k Gate Dielectric and Dual Hole-Conductive Paths.IEEE Electronics device Letters, 2017
11、Deng,Jing; Huang, Mingmin; Cheng, Junji; Lyu, Xinjiang; Chen, Xingbi. A new low specific on-resistance Hk-LDMOS with N-poly diode. Superlattices and Microstructures, v 101, p 180-190, January 1, 2017
学生培养
获微固学院卓越青年教师培养计划“2016教学进步奖”，“2017教学优秀奖”，指导本科生毕业设计多名


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