导师代码： 11942
导师姓名： 李斌成
性别： 男
特称：

职称： 教授
学位： 理学博士学位
属性： 专职
电子邮件： bcli@uestc.edu.cn

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学术经历： 1985、88和95年分别获得理学学士学位、工学硕士学位和理学博士学位。1988年—1992：中国科学院光电技术研究所研究实习员、助理研究员；1995年—1997年：南京大学博士后、副教授（资格）；1997年—1998年：法国巴黎理化高等学校 (ESPCI)博士后；1998年—1999年：德国Jena大学洪堡****；1999年—2001年：美国Arkansas大学和加州大学Irvine分校博士后；2001年—2002年：Lambda Physik美国公司（现美国Coherent公司）工程师；2002年—2003年：加拿大Toronto大学和Photo-Thermal Diagnostics公司研究员；2004-2015年：中国科学院“****”入选者、中国科学院光电技术研究所研究员；2015年3月调入电子科技大学工作。

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个人简介： 中国科学院引进国外杰出人才类“****”入选者，四川省学术和技术带头人，国际标准化组织（ISO）TC 172/SC 9/WG 6（“光学元件及其测试方法”）专家组成员，第14-18届国际光声光热大会国际顾问或技术委员会委员，第17届国际光声光热大会共主席，美国光学学会2013、2016年Optical Interference Coatings国际会议技术委员会委员，中国科学院大学（研究生院）第三届学位委员会学科群学位分委员会（材料科学与光电技术）委员和光学工程学科教学专家组成员，全国光辐射安全和激光设备标准化技术委员会委员。2007年获得国际光声光热联合会（IPPA）青年成就奖（国际上获得此奖项的第二人），2012年获中国科学院王宽诚西部****突出贡献奖。2007年和2012年获军队科技进步二等奖，2011年被评为国家863技术“十一五”先进个人。自2004年以来主持科学院"****"、国家自然科学基金、国家863计划、国家重大科研装备研制专项、国家重大专项等项目，总经费近亿元。在国内外主要学术期刊和国际学术会议上发表论文200余篇。其中SCI收录论文110篇，他引500余次，国际重要学术会议邀请报告近10次。作为项目负责人及撰写人制定国际标准1项（ISO 13142）。授权美国发明专利2项，中国发明专利35项。目前主要开展光声/光热检测技术及应用、光学测试技术及激光光谱分析技术等领域的研究工作。

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科研项目：

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研究成果： 1.X. Zhang and B. Li, Sensitivity enhancement of surface thermal lens technique with a short-wavelength probe beam: Experiment, Rev. Sci. Instrum. 86: 024902(2015)2.X. Zhang and B. Li, Calibration optimization of laser-induced deflection signal for measuring absorptance of laser components, Appl. Opt. 54(8):1861-1869 (2015)3.Q. Wang and B. Li, Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging, J. Appl. Phys. 118, 125705(2015)4.C. Liu, M. Kong, and B. Li, Anomalous optical Anderson localization in mixed one dimensional photonic quasicrystals, Opt. Express 23(19): A1297(2015)5.Q. Wang and B. Li, Accurate determination of electronic transport properties of silicon wafers by nonlinear photocarrier radiometry with multiple pump beam sizes, J. Appl. Phys. 118(21):215707(2015)6.C. Guo, M. Kong, D. Lin, and B. Li, Fluoride coatings for vacuum ultraviolet reflection filters, Appl. Opt. 54(35): 10498(2015)7.B. Li, H. Cai, Y. Han, L. Gao, C. Gao, and Y. Wang, Simultaneous determination of optical loss, residual reflectance and transmittance of highly anti-reflective coatings with cavity ring down technique, Opt. Express 22(23): 29135-29142(2014)8.C. Liu, M. Kong, and B. Li, Tamm plasmon-polariton with negative group velocity induced by a negative index meta-material capping layer at metal-Bragg reflector interface, Opt. Express 22(9):11376-11383(2014)9.C. Guo, M. Kong, W. Gao, and B. Li, Simultaneous determination of optical constants, thickness, and surface roughness of thin film from spectrophotometric measurements, Opt. Lett. 38(1):40(2013)10.C. Guo, M. Kong, D. Lin, C. Liu, and B. Li, Microstructure-related properties of magnesium fluoride films at 193nm by oblique-angle deposition, Opt. Express 21(1):960(2013)11.H. Zu, B. Li, Y. Han, and L. Gao, Combined cavity ring-down and spectrophotometry for measuring reflectance of optical laser components, Opt. Express 21(22):26735(2013)12.C. Guo, M. Kong, C. Liu, and B. Li, Optimization of thickness uniformity of optical coatings on a conical substrate in a planetary rotation system, Appl. Opt. 52(4):B26(2013)13.S. Ren, B. Li, L. Gao, and Q. Wang, Combined frequency- and time-domain photocarrier radiometry characterization of ion-implanted and thermally annealed silicon wafers Chin. Phys. B 22(5): 057202(2013)14.W. Liu and B. Li, Repetition rate dependence of absorption of fused silica irradiated at 193 nm, Chin. Opt. Lett. 11(5):053002(2013)15.S. Ren, B. Li, and Q. Huang, Three-dimensional transient model for time-domain free-carrier absorption measurement of excess carriers in silicon wafers, J. Appl. Phys. 114(24):243702(2013)16.Q. Huang, B. Li, and S. Ren, Optical and photo-carrier characterization of ultra-shallow junctions in silicon, Sci. China-Phys. Mech. Astron. 56(7): 1294-1300(2013) 17.Q. Huang and B. Li, Photocarrier radiometry of ion-implanted and thermally annealed silicon wafers with multiple-wavelength excitations, J. Appl. Phys. 111(9):093729(2012)18.Z. Qu, C. Gao, Y. Han, X. Du, and B. Li, Detection of chemical warfare agents based on quantum cascade laser cavity ring-down spectroscopy, Chin. Opt. Lett. 10(5): 050102(2012)19.曲哲超，李斌成，韩艳玲，基于量子级联激光器光腔衰荡光谱技术的痕量氨气检测，《红外与毫米波学报》31(5):431-436(2012)20.C. Liu, M. Kong, C. Guo, W. Gao, and B. Li, Theoretical design of shadowing masks for uniform coatings on spherical substrates in planetary rotation systems, Opt. Express 20(21):23790-23797(2012)21.Q. Huang and B. Li, Electronic transport characterization of silicon wafers by combination of modulated free carrier absorption and photocarrier radiometry, J. Appl. Phys. 109(2):023708(2011)22.Q. Huang and B. Li, Self-eliminating instrumental frequency responses from free carrier absorption signals for silicon wafer characterization, Rev. Sci. Instrum. 82(4): 043104 (2011)23.Y. Wang and B. Li, Accurate temperature model for absorptance determination of optical components with laser calorimetry, Appl. Opt. 50(9): C264(2011) 24.B. Li, D. Lin, Y. Han, C. Guo, Y. Zhang, and H. Liu, Anti-reflective fluoride coatings for widely tunable deep-ultraviolet diode-pumped solid-state laser applications, Chin. Phys. Lett. 27(4):044201(2010)25.X. Liu, B. Li*, W. Gao, and Y. Han, Infrared spectroscopic ellipsometry studies of ion- implanted and annealed silicon wafers, Acta Physica Sinica 59(3):1632-1637(2010) (in Chinese)26.Y. Gong, B. Li, L. Gao, and Y. Han, Optical feedback and pulsed cavity ring-down techniques for high-reflectivity measurement: A comparison study, Acta Photonics 39(3):397-402(2010)27.X. Liu, B. Li, and Q. Huang, Thermal annealing induced photocarrier radiometry enhancement for ion implanted silicon wafers, Chin. Phys. B 19(9):097021(2010)28.T. Zhao, Z. Qu, Y. Han, and B. Li, Two optical feedback schemes for cavity ring-down technique for high reflectivity measurements, Chin. Phys. Lett. 27(10):100701(2010)29.M. Liu, B. Li*, and Y. Wang, Accurate determination of subnanoscale deformation with combined laser calorimetry and surface thermal lens technique, Appl. Phys. Lett. 94, 131905(2009)30.X. Liu and B. Li*, IR variable angle spectroscopic ellipsometry study of high dose ion- implanted and annealed silicon wafers, J. Appl. Phys. 105, 013533(2009)31.H. Hao and B. Li, Photothermal detuning for absorption measurement of optical coatings, Appl. Opt. 47(2): 188-194.32.Y. Gong and B. Li, Ray-transfer-matrix model for accurate pulsed cavity ring-down measurement in the mismatching case, Appl. Opt. 47(21): 3860-386733.B. Li, X. Chen, and Y. Gong, Analysis of surface thermal lens signal in optical coatings with top-hat beam excitation, J. Appl. Phys. 103(3): 033518.34.X. Zhang, B. Li, and C. Gao, Sensitivity analysis of laterally resolved free carrier absorption determination of electronic transport properties of silicon wafers, J. Appl. Phys. 103(3):033709.35.X. Liu, B. Li, and X. Zhang, Photo-carrier radiometric and ellipsometric characterization of ion implanted silicon wafers, J. Appl. Phys. 103(12): **.X. Zhang, B. Li, and X. Liu, Accuracy analysis for the determination of electronic transport properties of Si wafers using modulated free carrier absorption, J. Appl. Phys. 104(10): **.M. Liu, B. Li, Y. Wang, and W. Gao, Combined laser calorimetry and surface thermal lens technique for optical coating characterization, Appl. Phys. B 91, 223-22738.Y. Gong, B. Li, and Y. Han, Optical feedback cavity ring-down technique for accurate measurement of ultra-high reflectivity, Appl. Phys. B 93, 355-36039.Y. Gong and B. Li, High reflectivity measurement with a broadband diode laser based cavity ring-down technique, Appl. Phys. B 88(3): 477-482(2007)40.B. Li, H. Blaschke, and D. Ristau, Pulsed photothermal deflection with a top-hat beam excitation, J. Appl. Phys. 100: 053509(2006)41.B. Li, H. Blaschke, and D. Ristau, Combined laser calorimetry and photothermal technique for absorption measurement of optical coatings, Appl. Opt. 45(23): 5827(2006)42.X. Zhang, B. Li, and C. Gao, Electronic transport characterization of silicon wafers by laterally resolved free-carrier absorption and multiparameter fitting, Appl. Phys. Lett. 89: 112120(2006)43.D. Shaughnessy, A. Mandelis, J. Batista, J. Tolev, and B. Li, Two-beam cross-modulation photocarrier radiometry: principles and contract amplification in semiconductor subsurface imaging, Semicon. Sci. Technol. 21: 320(2006)44.B. Li, D. Shaughnessy, and A. Mandelis, Influence of vignetting on signal analysis of photo-carrier radiometry of semiconductor wafers, Rev. Sci. Instrum. 76, 063703 45.B. Li, S. Xiong, and Y. Zhang, Fresnel diffraction model for mode-mismatched thermal lens with top-hat beam excitation, Appl. Phys. B 80， 527-52346.B. Li, S. Xiong, Y. Zhang, S. Martin, and E. Welsch, Nonlinear absorption measurement of UV dielectric components by pulsed top-hat beam thermal lens, Optics Communications 244, 367-376 47.B. Li, D. Shaughnessy, and A. Mandelis, Measurement accuracy analysis of photocarrier radiometric determination of electronic transport parameters of silicon wafers, J. Appl. Phys. 97, 023701 48.B. Li, A. Mandelis, and Z.Z. Kish, Photothermal investigation of the thermal shock behavior of alumina ceramics for engine components, J. Appl. Phys. 95, 1042-1049 49.B. Li, B. Majaron, J. A. Viator, T. E. Milner, J. S. Nelson, Y. Zhao, H. Ren, and Z. Chen, Accurate measurement of port wine stain depth in human skin in vivo using pulsed photothermal radiometry, J. Biomed. Opt. 9(5): 961-966 50.B. Li, B. Majaron, J. A. Viator, T. E. Milner, and J. S. Nelson, Performance evaluation of pulsed photothermal profiling of port-wine stain in human skin, Rev. Sci. Instrum. 75, 2048 51.B. Li, D. Shaughnessy, A. Mandelis, J. Batista, and J. Garcia, Three-Layer Photo-Carrier Radiometry Model of Ion-implanted Silicon Wafers, J. Appl. Phys. 95, 7832 52.B. Li, D. Shaughnessy, A. Mandelis, J. Batista, and J. Garcia, Accuracy of photo-carrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers, J. Appl. Phys. 96, 186 53.D. Shaughnessy, B. Li, A. Mandelis, and J. Batista, Ion implant dose dependence of photocarrier radiometry at multiple excitation wavelengths, Appl. Phys. Lett. 84, 521954.J. Batista, D. Shaughnessy, A. Mandelis, and B. Li, Deep subsurface electronic defect image contract and resolution amplification in Si wafers using infrared photocarrier radiometry, Appl. Phys. Lett. 85(10):1713-1715

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专业研究方向： 专业名称 研究方向 招生类别
080300光学工程 02激光技术及应用 博士
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080300光学工程 02激光技术及应用 硕士
080300光学工程 05光电测控与仪器 硕士

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