Pd/Pt修饰的AlGaN/GaN HEMT器件氢传感特性研究

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杨勇强,张贺秋,薛东阳,梁红伟,夏晓川,徐瑞良,梁永凤,韩永坤,陈帅昊.Pd/Pt修饰的AlGaN/GaN HEMT器件氢传感特性研究[J].,2021,61(5):531-536

Pd/Pt修饰的AlGaN/GaN HEMT器件氢传感特性研究

Hydrogen sensing characteristics study of Pd/Pt modified AlGaN/GaN HEMT device

DOI：10.7511/dllgxb202105012

中文关键词:AlGaN/GaN高电子迁移率晶体管 Pd/Pt合金氢传感器氢吸附

英文关键词:AlGaN/GaN high electron mobility transistors Pd/Pt alloy hydrogen sensor hydrogen adsorption

基金项目:国家自然科学基金资助项目(119752571167519812075045118750976157402661774072)；中央高校基本科研业务费专项资金资助项目(DUT20RC(3)042DUT19RC(3)074DUT19LK45)；大连市科技创新基金资助项目(2018J12GX060).

作者	单位
杨勇强,张贺秋,薛东阳,梁红伟,夏晓川,徐瑞良,梁永凤,韩永坤,陈帅昊

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中文摘要:

制备了Pd/Pt修饰的AlGaN/GaN高电子迁移率晶体管(HEMT)器件．对器件的氢传感特性测试表明，Pd/Pt合金修饰的器件的氢响应和响应(恢复)速率要优于Pd和Pt单独修饰的器件，Pd和Pt质量比为2 mg∶1 mg的氢传感器具有最佳的氢传感性能．对吸附平衡的稳态分析进一步证实了这一结论．室温下氢体积分数为0.1%，氢气通入流速为200 mL/min时，Pd/Pt(2 mg∶1 mg)样品的电流变化为0.249 mA，响应时间和恢复时间分别为41 s和42 s．此外，测试温度增加到55 ℃也进一步提高了器件对氢气的响应和响应速率．

英文摘要:

Pd/Pt modified AlGaN/GaN high electron mobility transistors (HEMT) devices were fabricated and characterized for hydrogen sensing. The comparative experiments show that the response of hydrogen and response (recovery) rate of Pd/Pt alloy modified devices are significantly higher than that of Pd and Pt individually modified device and the hydrogen sensor with Pd and Pt mass ratio of 2 mg∶1 mg is confirmed to have the optimal hydrogen sensing performance. This conclusion is further confirmed by the steady state analysis on adsorption equilibrium. Moreover, when hydrogen volume fraction is 0.1% at room temperature and the flow rate of hydrogen is 200 mL/min, the current change of Pd/Pt (2 mg∶1 mg) sample is 0.249 mA, and the response time and recovery time is 41 s and 42 s, respectively. In addition, increasing the test temperature to 55 ℃ also further improves the response of hydrogen and response rate.

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Pd/Pt修饰的AlGaN/GaN HEMT器件氢传感特性研究

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