马铭,任瑛,侯晓多,陈国清,张贵锋.磁控溅射制备AlCrWTaTiNb高熵合金薄膜低温等离子体氮化[J].,2019,59(1):28-34 |
磁控溅射制备AlCrWTaTiNb高熵合金薄膜低温等离子体氮化 |
Low temperature plasmatic nitriding of AlCrWTaTiNb high entropy alloy film synthesized by magnetron sputtering |
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DOI:10.7511/dllgxb201901005 |
中文关键词:多元高熵合金薄膜低温渗氮力学性能 |
英文关键词:multi-component high entropy alloy filmslow temperature nitridesmechanical property |
基金项目:国家国际科技合作专项(2015DFR60370);航空科学基金资助项目(20153663010). |
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中文摘要: |
采用磁控溅射技术沉积了AlCrWTaTiNb多元高熵合金薄膜,在400 ℃以下采用高密度等离子体设备对沉积的薄膜进行了氮化处理.用X射线衍射(XRD)、原子力显微镜和纳米压痕对氮化后薄膜的微观结构、表面形貌以及力学性能进行了分析.结果表明,高熵效应有利于降低氮化温度,最低氮化温度仅为200 ℃,所有的(AlCrWTaTiNb)N薄膜晶体结构呈现简单的FCC结构,且具有(111)择优取向.随着氮化温度的增加,(AlCrWTaTiNb)N复合薄膜的显微硬度、弹性模量和对应的H3/E2均增大,氮化温度为300 ℃时,达到最大,随后略微下降.随氮化时间的延长,显微硬度和弹性模量均逐渐增加. |
英文摘要: |
Multi-component high entropy AlCrWTaTiNb alloy films were prepared using magnetron sputtering technique and then were nitrided below 400 ℃ by means of a high density plasma equipment. The microstructure, surface morphology and mechanical properties of the nitrided films were investigated by X-ray diffraction (XRD), atomic force microscopy and nano indentation, respectively. The results show that the lowest nitriding temperature is only 200 ℃ in the experimental conditions and the high entropy effect is really propitious to reduce nitriding temperature. All the (AlCrWTaTiNb)N films crystals are simple FCC structure with a (111) preferred orientation. With the increase of nitriding temperature, the micro-hardness, the elastic modulus and the corresponding H3/E2 of the (AlCrWTaTiNb)N composite films increase and reach maximum at 300 ℃, and then decrease slightly. With the prolongation of nitriding time, the micro-hardness and elastic modulus increase gradually. |
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