陈小兵 博士 教授 博士生导师
专业：凝聚态物理
研究方向：功能材料的制备与性能研究
电话： (O); 9 (Lab)
传真：
电子信箱：xbchen@yzu.edu.cn
教育经历：
1978.3 ~ 1982.1 扬州师范学院物理系获理科学士学位
1985, 9-1987. 7: 加拿大McMaster 大学工程物理系获硕士学位
1997, 9-2000, 7: 南京大学理学博士
工作经历：
1982.2 ~ 1988.11 扬州师范学院物理系 助教
1988.12 ~ 1997.7 扬州大学物理系 讲师
1997.8 ~ 2001.7 扬州大学物理系 副教授
2001.8 ~ 扬州大学物理科学与技术学院 教授
研究领域和兴趣：
一直从事非晶、多晶体材料和薄膜的制备与物性研究，曾对非晶硅薄膜的制备及光学性能、巨磁阻材料的内耗及相变特性进行过研究。近年来的工作主要为：
对SBT、PZT等铁电材料的铁电性能、介电性能、疲劳及开关性能等进行了较为系统的研究；
对3 层，4 层和5 层铋层状材料的镧系A 位掺杂和高价B 位掺杂进行了详细而系统的研究。
对单相多铁性磁电材料的制备，性能表征和机理分析方面进行了较为系统研究，并提出了再铋层状材料中通过植入磁性离子基团激发材料铁磁性的一种方法
获奖情况
? “教育部科技成果二等奖”（第三完成人），2006.1
在研项目
?国家自然科学基金项目**：“新型单相层状多铁性磁电材料Bi5Ti3Fe0.5Co0.5O15的制备及性能与机理研究”;
? 南京大学固体微结构国家重点实验室开放课题M23001：“单相多铁性材料Bi5Fe0.5Co0.5Ti3O15的制备和性能研究”
科研成果
1.Xiangyu Mao, Wei Wang, Xiaobing Chen*, and Yalin Lu, Multiferroic properties of layer-structured Bi5Fe0.5Co0.5Ti3O15 ceramics, Appl. Phys. Lett. 95, 082901 (2009).
2.Wei Wang, Xiao-juan Wang, Jun Zhu, Xiang-yu Mao and Xiao-bing Chen*, “Relaxation of dielectric loss peak over Intermediate temperature range in layer-structured Bi5TiNbWO15”, Chinese Physics Letters, 26，047701 (2009).
3.Wei Wang, Jia-bao Sun, Xiang-yu Mao, Xiao-bing Chen*, “Structural and electrical characteriszaion of chemical-solution-derived Bi5FeTi4O15 thin films”, J. Phys. D: Appl. Phys. 41, 155418 (2008).
4.X. Y. Mao, W. Wang, and X. B. Chen*, Solid State Commun. “Electrical and magnetic properties of Bi5FeTi3O15 compound prepared by inserting BiFeO3 into Bi4Ti3O12147”, 186 (2008).
5.Wei Wang, Dan Shan, Jia-bao Sun, Xiang-yu Mao, and Xiao-bing Chen*, “Aliovalent B-site modification on three- and four- layer Aurivillius intergrowth”, J. Appl. Phys., 103, 044102 (2008).
6.Hui Sun, Xiao-Bing Chen*, Jun Zhu, Jun-Hui He, Ya-Feng Qian, Hong Fang, “Notable enlargement of remnant polarization for fatigue-free SrBi4Ti4O15 thin films by La-substitution”, Journal of Sol-Gel Science and Technololgy, 43 (1) 125 (2007)
7.Wei Wang, Jun Zhu, Xiang-Yu Mao, Xiao-Bing Chen*, “Properties of tungsten-doped Bi4Ti3O12-SrBi4Ti4O15 intergrowth ferroelectrics” Materials Research Bulletin, 42, 274 (2007).
8.Jun Zhu, Xiao-Bing Chen*, Jun-hui He and Jian-Cang Shen, “Investigations on Raman and X-ray photoemission scattering patterns of vanadium doped SrBi4Ti4O15 ferroelectric ceramics”, Physics Letters A, 362,471 (2007).
9.Wei Wang, Jun Zhu, Xiang-yu Mao, and Xiao-bing Chen*, “Properties of Nd-substituted SrBi4Ti4O15 ferroelectric ceramics”, Journal of Physics D: Applied Physics 39, 370(2006).
10.Can Jin, Chen-peng Du, Jun Zhu, Jun-hui He, Xiang-yu Mao, and Xiao-bing Chen*, “Ferroelectric and dielectric properties of niobium-doped SrBi4Ti4O15 ceramics”, J. Phys. D: Appl. Phys. 39, 2415 (2006).
11.Feng Qiang, Jun-Hui He, Jun Zhu, and Xiao-Bing Chen*, “Ferroelectric and dielectric properties of bismuth-layered structural Sr2Bi4?xLnxTi5O18 (Ln = La, Nd, Sm and Dy) ceramics”, J. Solid State Chemistry 179, 1768 (2006).
12.Jun Zhu, Jun-hui He, Xiao-bing Chen*, “Substitution site of lanthanum ions in La-doped SrBi4Ti4O15 and Bi4Ti3O12-SrBi4Ti4O15”, Integrated Ferroelectrics 79, 265 (2006).
13.Feng Qiang, Jun Zhu, Xiao-bing Chen*, “Ferroelectric properties and leakage characteristics in Sr2?xCaxBi4Ti5O18 ceramics”, Integrated Ferroelectrics 79, 171(2006).
14.Xiang-Yu Mao, Fu-Wen Mao, Xiao-Bing Chen*, “Ferroelectric and dielectric properties of Bi4?xNdxTi3O12 ceramics”, Integrated Ferroelectrics 79, 155(2006).
15.Hui Sun, Hong Fang, Wei-Dong Zhou, Xiao-Bing Chen*, “Ferroelectric properties of SrBi4Ti4O15 thin films prepared by sol-gel method”, Integrated Ferroelectrics 79, 203(2006).
16.X. Y. Mao, J. H. He, J. Zhu, and X. B. Chen*, “Structural, ferroelectric, and dielectric properties of vanadium doped Bi4-x/3Ti3-xVxO12”, J. Appl. Phys. 100, 044104(2006).
17.F. Chen, Q. F. Zhang, J. H. Li, Y. J. Qi, C. J. Li, X. B. Chen, X. M. Ren, and Y. Zhao, “Sol-gel derived multiferroic BiFeO3 ceramics with large polarization and weak ferromagnetism”, Appl. Phys. Lett. 89,092910(2006).
18.Hui Sun, Jun Zhu, Hong Fang, and Xiao-bing Chen*, “Large remnant polarization and excellent fatigue property of vanadium-doped SrBi4Ti4O15 thin films”, J Appl. Phys. 100, 074102 (2006).
19.Hong Fang, Hui Sun, Jun Zhu, Xiang-yu Mao, and Xiao-bing Chen*, “Effect of vanadium-modification on structural and electrical properties of Sr2Bi4Ti5O18 thin film”, J. Phys. D: Appl. Phys. 39, 5300(2006).