姓名：贺竞辉
职称：教授、硕士生导师
部门：化工学院应用化学系
联系方式：
办公室地址: 701-1527
实验室地址：701-1517
Email:jinghhe@suda.edu.cn
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学历及学术经历
2005年毕业于南京大学化学化工学院，获学士学位；2008年毕业于南京大学化学化工学院，获硕士学位；2013年于新加坡国立大学获博士学位，2013-2014新加坡国立大学博士后。2014年加入苏州大学材化部路建美教授课题组，受聘为特聘副教授、硕士生导师，2019年获聘教授。获江苏省双创博士、苏州市紧缺人才称号。目前承担国家青年基金1项，面上基金1项，江苏省高校自然科学研究重大项目1项、市纳米创新专项1项。主讲物理化学、材料表面科学基础等课程。
研究领域
气体传感器; 电存储器件；忆阻器，忆容器
研究特色
从表界面化学、分子间相互作用视角研究电荷传输机理，进而指导优化器件性能。主要特色成果包括：
（1）提出离子共轭气敏材料概念，提升气体传感器性能；
（2）实现第一个独立的理想忆容器；
（3）实现活泼半导体表面的轨道分辨率像
申请人以第一或通讯作者身份在Nature Communications (1篇)、Advanced Material (1篇)，Chemical Science (2篇)、Materials Horizons (1篇)、Small (3篇)、Sensors and Actuators B: Chemical (2篇)、Advanced Electronic Materials (1篇)、ACS Applied Material and Interface (1篇)、Advanced Material Technologies (1篇)、Journal of Physical Chemistry C (3篇) 等期刊等发表SCI论文26篇，引用次数1600余次，H因子13。
代表性论文

(1)Qian, W.-H.; Cheng, X.-F.; Zhao, Y.-Y.; Zhou, J.; He, J.-H.*; Li, H.; Xu, Q.-F.; Li, N.-J.; Chen, D.-Y.; Lu, J.-M*. Independent Memcapacitive Switching Triggered by Bromide Ion Migration for Quaternary Information Storage. Advanced Materials 2019, 0, ** (IF=25.809，中科院一区).
(2)He, J.-H.; Mao, W.; Xu, G. Q.*; Tok, E. S. Orbital resolution of molecules covalently attached to a clean semiconductor surface. Nature Communications2014, 5, 3721 (IF=12.353，中科院一区).
(3)Zhou, J.; Lin, H.; Cheng, X.-F.; Shu, J.; He, J.-H.^*; Li, H.; Xu, Q.-F.; Li, N.-J.; Chen, D.-Y.; Lu, J.-M.* Ultrasensitive and robust organic gas sensors through dual hydrogen bonding. Materials Horizons2018，DOI：10.1039/C8MH01098F(IF=13.183，中科院一区).
(4)Xiao, X.; Cheng, X. F.; Hou, X.; He, J.-H.^*; Xu, Q. F.; Li, H.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Ion-in-Conjugation: Squaraine as an Ultrasensitive Ammonia Sensor Material. Small2017, 13,** (IF=9.598，中科院一区).
(5)Hou, X.; Xiao, X.; Zhou, Q. H.; Cheng, X. F.; He, J.-H.^*; Xu, Q. F.; Li, H.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Surface engineering to achieve organic ternary memory with a high device yield and improved performance. Chemical Science2017, 8, 2344-2351 (IF=9.063，中科院一区).
(6)He, J.-H.; Mao, W.; Chen, W.; Wu, K.; Cheng, H. S.; Xu, G. Q.* Resolving molecular orbitals self-decoupled from semiconductor surfaces. Chemical Science2014, 5, 4447-4452 (IF=9.063，中科院一区).
(7)Zhou, J.; Cheng, X.-F.; Gao, B.-J.; Yu, C.; He, J.-H.^*; Xu, Q.-F.; Li, H.; Li, N.-J.; Chen, D.-Y.; Lu, J.-M.* Detection of NO₂Down to One ppb Using Ion-in-Conjugation-Inspired Polymer. Small2019, 15, ** (IF=9.598，中科院一区).
(8)Zhou, J.; Xiao, X.; Cheng, X. F.; Gao, B. J.; He, J.-H.^*; Xu, Q. F.; Li, H.; Li, N. J.; Chen, D. Y.; Lu, J.-M.^*Surface modification of polysquaraines to sense humidity within a second for breath monitoring. Sensors and Actuators B-Chemistry2018, 271, 137 (IF=5.667，中科院一区).
(9)Xiao, X.; Zhang, Q. J.; He, J.-H.^*; Xu, Q. F.; Li, H.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Polysquaraines: Novel humidity sensor materials with ultra-high sensitivity and good reversibility. Sensors and Actuators B-Chemistry2018, 255, 1147 (IF=5.667，中科院一区).
(10)Cheng, X. F.; Hou, X.; Zhou, J.; Gao, B. J.; He, J.-H.^*; Li, H.; Xu, Q. F.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Pseudohalide-Induced 2D (CH₃NH₃)₂PbI₂(SCN)₂Perovskite for Ternary Resistive Memory with High Performance. Small2018, 14, ** (IF=9.598，中科院一区).
(11)Cheng, X. F.; Hou, X.; Qian, W. H.; He, J.-H.^*; Xu, Q. F.; Li, H.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Poly(3,4-ethylenedioxythiophene)-Poly(styrenesulfonate) Interlayer Insertion Enables Organic Quaternary Memory. ACS Appliled Materials & Interfaces2017, 9, 27847 (IF=8.097，中科院一区).
(12)Cheng, X. F.; Shi, E. B.; Hou, X.; Shu, J.; He, J.-H.^*; Li, H.; Xu, Q. F.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* 1D pi-d Conjugated Coordination Polymers for Multilevel Memory of Long-Term and High-Temperature Stability. Advanced Electronic Materials2017, 3(IF=5.466, 中科院一区).
(13)Zhao, Y. Y.; Cheng, X. F.; Qian, W. H.; Zhou, J.; Sun, W. J.; Hou, X.; He, J.-H.^*; Li, H.; Xu, Q. F.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Mussel-Inspired Polydopamine Coating for Flexible Ternary Resistive Memory. Chemistry–An Asian Journal 2018, 13, 1744-1750 (IF=3.692).
(14)Hou, X.; Cheng, X. F.; Zhou, J.; He, J.-H.^*; Xu, Q. F.; Li, H.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Better Organic Ternary Memory Performance through Self-Assembled Alkyltrichlorosilane Monolayers on Indium Tin Oxide (ITO) Surfaces. Chemistry–A European Journal 2017, 23, 16393-16400 (IF=5.160).
(15)Hou, X.; Cheng, X. F.; Xiao, X.; He, J.-H.^*; Xu, Q. F.; Li, H.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain. Chemistry–An Asian Journal 2017, 12, 2278-2283 (IF=3.692).
(16)Cheng, X. F.; Xia, S. G.; Hou, X.; Xiao, X.; He, J.-H.^*; Ren, Z. G.; Xu, Q. F.; Li, H.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Racemic Effect on the Performance of Organic Multilevel Memory: Beyond Molecular Design. Advanced Material Technologies2017, 2，** (IF=4.622).
(17)Cheng, X. F.; Shi, E. B.; Hou, X.; Xia, S. G.; He, J.-H.^*; Xu, Q. F.; Li, H.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Upgrading Electroresistive Memory from Binary to Ternary Through Single-Atom Substitution in the Molecular Design. Chemistry–An Asian Journal 2017, 12, 45-51 (IF=3.692).
(18)Mao, W.; He, J.-H.^*; Xi, Y. J.; Chen, W.; Wu, K.; Zhang, C.; Tok, E. S.; Xu, G. Q. Molecular Nanocorrals on Si(111)-(7x7): Temperature-Dependent Site Selectivity. Journal of Physical Chemistry C2016, 120, 24780-24788 (IF=4.484).
(19)Li, Y.; Li, H.; He, J.-H.^*; Xu, Q. F.; Li, N. J.; Chen, D. Y.; Lu, J.-M.* Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge-Trapping in Organic Materials. Chemistry – An Asian Journal 2016, 11, 906-914 (IF=3.692).
(20)Bao, Q.; Li, H.; Li, Y.; He, J.-H.^*; Xu, Q. F.; Li, N. J.; Chen, D. Y.; Wang, L. H.; Lu, J.-M.* Comparison of two strategies to improve organic ternary memory performance: 3-Hexylthiophene linkage and fluorine substitution. Dyes and Pigments2016, 130, 306-313 (IF=3.767).
(21)He, J.-H.; Mao, W.; Gu, J. Q.; Xu, G. Q.; Tok, E. S. Self-Assembled Molecular Wires and Highly Ordered Monolayer: Thiazole on Ge(100). Journal of Physical Chemistry C2013, 117, 19115 (IF=4.484).
(22)He, J.-H.; Mao, W.; Gao, J. K.; Xu, G. Q. Theoretical Investigation of Ge(100) Nitridation by Nitric Oxide: Monomeric or Dimeric Dissociation? Journal of Physical Chemistry C2013, 117, 17111-17118 (IF=4.484).