姓 名 王晓雄 性 别 男
出生年月 1979年11月 籍贯 永康
民 族 汉族 政治面貌 党员
最后学历 研究生毕业 最后学位 理学博士
技术职称 副教授 导师类别 硕士生导师
导师类型 校内 兼职导师 否
行政职务 Email phywangxx@njust.edu.cn
工作单位 理学院 邮政编码 210094
通讯地址 南京市玄武区孝陵卫200号
单位电话
个人主页


指导学科
学科专业(主) 070205|凝聚态物理 招生类别 硕士 所在学院 理学院
研究方向 量子功能材料的设计和制备(目前主要研究拓扑绝缘体薄膜)，同步辐射实验技术应用


工作经历
2007年8月-至今 南京理工大学 理学院 教师

教育经历
2002年9月-2007年6月 浙江大学 凝聚态物理研究所 博士研究生

获奖、荣誉称号
中国物理学会会员 美国物理学会会员
南京理工大学科技工作先进个人
南京理工大学优秀党员
南京市自然科学优秀学术论文奖

科研项目
国家自然科学青年基金江苏省自然科学青年基金南京理工大学紫金之星
发表论文
[1] Hu H., et al. Transformation of the Topological Phase and the Edge Modes of Double-Bilayer Bismuthene with Inter-Bilayer Spacing. Crystals, 2019, 9(5): 266.
[2] Chang T.-R., et al. Band Topology of Bismuth Quantum Films. Crystals, 2019, 9(10): 510.
[3] Xu C.-Z., et al. Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe 2 films. Physical Review Materials, 2018, 2(6): 064002.
[4] Xu C.-Z., et al. Gapped electronic structure of epitaxial stanene on InSb (111). Physical Review B, 2018, 97(3): 035122.
[5] Gui X., et al. Pt–Bi Antibonding Interaction: The Key Factor for Superconductivity in Monoclinic BaPt2Bi2. Inorganic chemistry, 2018, 57(4): 1698-1701.
[6] Flo?Totto D., et al. In Situ Strain Tuning of the Dirac Surface States in Bi2Se3 Films. Nano letters, 2018, 18(9): 5628-5632.
[7] Xu C.-Z., et al. Elemental Topological Dirac Semimetal: α-Sn on InSb(111). Physical Review Letters, 2017, 118(14): 146402.
[8] Wang X., et al. Topological phase stability and transformation of bismuthene. EPL (Europhysics Letters), 2017, 119(2): 27002.
[9] Wang X., et al. Topological phases in double layers of bismuthene and antimonene. Nanotechnology, 2017, 28(39): 395706.
[10] Märkl T., et al. Engineering multiple topological phases in nanoscale Van der Waals heterostructures: realisation of α-antimonene. 2D Materials, 2017, 5(1): 011002.
[11] Kowalczyk P., et al. Single atomic layer allotrope of bismuth with rectangular symmetry. Physical Review B, 2017, 96(20): 205434.
[12] Bian G., et al. Survey of electronic structure of Bi and Sb thin films by first-principles calculations and photoemission measurements. Journal of Physics and Chemistry of Solids, 2017,
[13] Xiaoxiong W., et al. Topological phase transitions in stanene and stanene-like systems by scaling the spin-orbit coupling. Europhysics Letters, 2016, 115(3): 37010.
[14] Bian G., et al. Engineering Electronic Structure of a Two-Dimensional Topological Insulator Bi(111) Bilayer on Sb Nanofilms by Quantum Confinement Effect. ACS Nano, 2016, 10(3): 3859-3864.
[15] Wang X., et al. Dirac semimetal films as spin conductors on topological substrates. Physical Review B, 2015, 91(12): 125103.
[16] Wang H., et al. Characterization on surface and interface structure of epitaxial Pr 0.7Sr0.3MnO3/La0.5Ca0.5MnO3/Pr0.7Sr0.3MnO3 trilayer. Superlattices and Microstructures, 2015, 79(108-115.
[17] Bian G., et al. Direct transition resonance in atomically uniform topological Sb(111) thin films. Physical Review B, 2015, 92(24): 241401.
[18] Xiaoxiong W., Tai-Chang C. Internal chiral spin structure of topological-insulator/metal superlattices. Europhysics Letters, 2014, 106(3): 37008.
[19] Wang X., Chiang T. C. Topological states in Bi₂Se₃ surfaces created by cleavage within a quintuple layer: Analysis in terms of the Shockley criterion. Physical Review B, 2014, 89(12): 125109.
[20] Li W.-J., et al. Fullerene film on metal surface: Diffusion of metal atoms and interface model. Applied Physics Letters, 2014, 104(19): 191606.
[21] Bian G., et al. First-principles and spectroscopic studies of Bi(110) films: Thickness-dependent Dirac modes and property oscillations. Physical Review B, 2014, 90(19): 195409.
[22] Xian F., et al. Color tunable electroluminescence from Co-doped ZnO nanorods/p-Si heterojunction. Journal of Luminescence, 2013, 144(154-157.
[23] Xian F., et al. Controllable growth of ZnO nanorods by seed layers annealing using hydrothermal method. Materials Letters, 2013, 108(46-49.
[24] Wang X., et al. Topological spin-polarized electron layer above the surface of Ca-terminated Bi₂Se₃. Physical Review B, 2013, 87(3): 035109.
[25] Wang X., et al. Topological quantum well resonances in metal overlayers. Physical Review B, 2013, 87(23): 235113.
[26] Kowalczyk P. J., et al. Electronic Size Effects in Three-Dimensional Nanostructures. Nano Letters, 2013, 13(1): 43-47.
[27] Guang B., et al. Topological phase transition and Dirac fermion transfer in Bi 2 Se 3 films. EPL (Europhysics Letters), 2013, 101(2): 27004.
[28] Bian G., et al. Origin of giant Rashba spin splitting in Bi/Ag surface alloys. Physical Review B, 2013, 88(8): 085427.
[29] Xian F. L., et al. Crystallographic, optical and magnetic properties of Co-doped ZnO thin films synthesized by sol gel route. Crystal Research and Technology, 2012, 47(4): 423-428.
[30] Wang X., et al. Effects of surface modification on the properties of topological surface states in Bi2Se3. Physics Letters A, 2012, 376(5): 768-772.
[31] Wang X., et al. Fragility of Surface States and Robustness of Topological Order in ${\mathrm{Bi}}_{2}{\mathrm{Se}}_{3}$ against Oxidation. Physical Review Letters, 2012, 108(9): 096404.
[32] Bian G., et al. Interfacial Protection of Topological Surface States in Ultrathin Sb Films. Physical Review Letters, 2012, 108(17): 176401.
[33] Xu L., et al. The evolution behavior of structures and photoluminescence of K-doped ZnO thin films under different annealing temperatures. Journal of Alloys and Compounds, 2011, 509(6): 2942-2947.
[34] Bian G., et al. Symmetry-constrained reorganization of Dirac cones in topological insulators by surface modification. Physical Review B, 2011, 84(23): 235414.
[35] Wang X.-X., Li H.-N., Yao C.-H. Aggregation Behavior of Metal-Ethylene Complexes and Its Effect on Hydrogen Storage Capacity. Chinese Physics Letters, 2010, 27(2): 026803.
[36] Wang X. Deformation guided unzipping of nanotubes: A first-principles study. Physics Letters A, 2010, 374(48): 4894-4898.
[37] Wang X.-X., et al. Electronic Structure of Eu₆C₆₀. Chinese Physics Letters, 2009, 26(1): 017104.
[38] Wang X.-X., et al. Charge transfer of 1 ML C₆₀/Ag(100). Chinese Physics C, 2009, 33(11): 996.
[39] Wang X., et al. Interaction between nanobuds and hydrogen molecules: A first-principles study. Physics Letters A, 2009, 374(1): 87-90.
[40] Hong-Nian L., et al. Electronic structure of C 84 film studied by photoemission measurement and first-principles calculation. Journal of Physics: Condensed Matter, 2009, 21(26): 265502.
[41] Wang X.-X., et al. Photoemission intensity oscillations in the HOMO-2 band of C60 film. Journal of Electron Spectroscopy and Related Phenomena, 2008, 165(1–3): 20-23.
[42] Wang X.-X., Li X.-Y., Li H.-N. First principles study of Eu doped carbon nanotubes. Physics Letters A, 2008, 372(44): 6677-6680.
[43] Wang X.-X., Li H.-N., Xu Y.-B. Valence state of Eu ions in C60 fullerides. Solid State Communications, 2008, 147(11–12): 436-438.
[44] Xiao-Xiong W., et al. Valence band of metal europium studied with synchrotron radiation photoemission spectroscopy. Journal of Physics: Condensed Matter, 2007, 19(9): 096001.
[45] Hong-Nian L., et al. Fine structure of C 60 photoionization cross-section oscillations. Journal of Physics: Condensed Matter, 2007, 19(43): 436223.
[46] Wang Xiao-Xiong L. H.-N. Core-level photoemission of Sm fullerides. Acta Physica Sinica, 2006, 55(8): 4259-4264.
[47] Wang Xiao-Xiong L. H.-N., Qian Hai-Jie, Su Run, Zhong Jun, Hong Cai-Hao, Wang Jia-Ou. Valence band photoemission of Sm fullerides. Acta Physica Sinica, 2006, 55(8): 4265-4270.
[48] Li H.-N., Wang X.-X., Ding W.-F. Electron attenuation lengths in fullerene and fullerides. Journal of Electron Spectroscopy and Related Phenomena, 2006, 153(3): 96-101.
[49] Li H.-N., et al. Electronic state of C60 monolayer on Ag(1 1 1) before and after Yb intercalation. Surface Science, 2005, 586(1–3): 65-73.
[50] He S.-L., et al. Synchrotron radiation photoemission study of Yb-intercalated C₆₀. Physical Review B, 2005, 71(8): 085404.
[51] Xiao-Xiong W., et al. Valence state evolution of C 60 deposited on Sm film. Journal of Physics: Condensed Matter, 2004, 16(25): 4619.
[52] Li H.-N., et al. Electronic structure of Yb/H–Si (111) interface. Chinese Physics, 2004, 13(11): 1941.