个人信息

姓　　名: 徐勇 性　　別: 男 导师类型: 博士生导师
技术职称: 教授 电子邮箱: xuyong@njupt.edu.cn
博士招生学科: (080903)微电子学与固体电子学
学术型硕士招生学科: (080903)微电子学与固体电子学
专业型硕士招生类别(领域): (085400)电子信息

个人简介:博士、教授、博士生导师，江苏省****，IEEE会员。2008年和2011年毕业于法国格勒诺布尔国立理工学院（INPG，位于欧洲著名微电子研究中心MINATEC内），获微纳电子学硕士和博士学位，师从知名微电子学家Gerard Ghibaudo教授（IEEE Fellow）和Francis Balestra教授（欧洲Si Nano研究中心负责人），从事集成电路设计和半导体器件的研究。博士毕业后，先后在日本国立物质材料研究所(2011.12-2013.08)和韩国东国大学(2013.10-2018.08)从事博士后研究和担任助理教授，2018年10月以南京邮电大学高层次人才引进(第三层次)加入电子与光学工程学院、微电子学院。多年来从事微纳半导体器件的研究，主要兴趣在器件物理(制造、表征、建模与仿真)，迄今已发表SCI期刊论文80余篇，其中第一作者或通讯作者40篇，包括6篇Advanced Materials和4篇Advanced Functional Materials, 5篇IEEE Electron Device Letters (EDL)和4篇IEEE Transactions on Electron Devices (TED)，6篇Applied Physics Letters，1篇Materials Today, 以及13篇国际会议论文和1个专著章节。连续五年(2014-2018)被IEEE Electron Device Society (EDL, TED)评选为金牌审稿人，于2015年担任Semiconductor Science and Technology客座编辑，并在2018年被顶级国际会议Materials Research Society (MRS)邀请做了特邀报告。
研究领域:研究方向：
1.半导体器件与器件物理(Semiconductor devices and the related device physics)
2.电学特性表征、模拟与建模(Electrical property characterizations, simulations, and modeling)
3.低频噪声(Low-frequency noise)
4.集成电路(模拟、数字及版图设计，Numerical, analogic integrated circuits and layout design)

主要研究成果
代表性论文(一作和通讯)：
2020
1.D.K. Zhang, Y. Yin, W. Lv, F. Gao, D.F. Pan, X.C. Tu, S.H. Ju, X. Su, X.Z. Ma, H.B . Sun*, Y. Xu*, Y. Shi*，Sharply Increased Current in Asymmetrically Aligned Polycrystalline Polymer Transistors With Sub-Domain-Size Channels，IEEE Electron Device Letters, 41, 4, 589-592, 2020.
2.D.K. Zhang, Y. Yin, W. Lv, F. Gao, D.F. Pan, H.B . Sun*, Y. Xu*, S.H. Ju, S.L. Li, Y. Shi*, Suppressing off-state current via molecular orientation in submicrometer polymer field-effect transistors, Organic Electronics, 105742, 2020.
3.Q.J. Wang, S. Jiang, B.W. Zhang, E.Y. Shin, Y.Y. Noh*, Y. Xu*, Y. Shi, Y. Li*, Role of Schottky Barrier and Access Resistance in Organic Field-Effect Transistors, The Journal of Physical Chemistry, 11, 4, 1466-1472, 2020.

2019
4.F.M. Huang, A. Liu, H.H. Zhu, Y. Xu*, F. Balestra, G. Ghibaudo, Y. Noh*, J.H. Chu, W.W. Li*，Reliable mobility evaluation of organic field-effect transistors with different contact metals，IEEE Electron Device Letters, 40, 4, 605-608, 2019.
5.E.S. Shin, W.T. Park, Y.W. Kwon, Y. Xu*, Y.Y. Noh*, Spontaneous doping at the polymer-polymer interface for high-performance organic transistors, ACS applied materials & interfaces, 11, 13, 12709-12716, 2019.
6.F.M. Huang, M.J. Li, Y. Xu, A.Y. Cui, W.W. Li*, Y. Xu*, J.H. Chu, Y.Y. Noh*, Understanding Thickness-Dependent Electrical Characteristics in Conjugated Polymer Transistors With Top-Gate Staggered Structure, IEEE Transactions on Electron Devices, 66, 6, 2723-2728, 2019.
7.H.H. Zhu, E.S. Shin, A. Liu, D.S. Ji, Y. Xu*, Noh Y.Y. Noh*, Printable semiconductors for backplane TFTs of flexible OLED displays, Advanced Functional Materials, **, 2019.
8.Y. Xu*, Y. Li, S.L. Li, F. Balestra, G. Ghibaudo, W.W. Li, Y.F. Lin, H.B. Sun*, J. Wan*, X.R. Wang, Y.F. Guo*, Y. Shi, Y.Y. Noh*, Precise Extraction of Charge Carrier Mobility for Organic Transistors, Advanced Functional Materials, **, 2019. Front Cover

2018
1.C.H. Chen, W.W. Li, Y.M. Chang, C.Y. Lin, S.H. Yang, Y. Xu*, and Y.F. Lin*, Negative-Differential-Resistance Devices Achieved by Band-Structure Engineering in Silicene under Periodic Potentials, Physical Review Applied, 10(4), 044047, 2018.
2.Y. Xu*, H.B. Sun, A. Liu, H.H. Zhu, B.H. Li*, T. Minari, F. Balestra, G. Ghibaudo, and Y. Y. Noh*, Essential Effects on the Mobility Extraction Reliability for Organic Transistors, Advanced Functional Materials, 28(42), **, 2018.
3.A. Liu, H.H. Zhu, W.T. Park, S.J. Kang, Y. Xu*, and Y. Y. Noh*, Room‐Temperature Solution‐Synthesized p‐Type Copper (I) Iodide Semiconductors for Transparent Thin‐Film Transistors and Complementary Electronics, Advanced Materials, 30(34), **, 2018. Back Cover
4.Y. Xu*, H.B. Sun, A. Liu, H.H. Zhu, W.W. Li, Y.F. Lin, and Y. Y. Noh*, Doping: a key enabler for organic transistors, Advanced Materials, 30(46),**, 2018.
5.A. Liu, H.H. Zhu, H.B. Sun, Y. Xu*, and Y. Y. Noh*, Solution Processed Metal Oxide High κ Dielectrics for Emerging Transistors and Circuits, Advanced Materials, 30(34), **, 2018.

2017
1.Y. Xu*, H.B. Sun, W.W. Li, Y.F. Lin*, F. Balestra, G. Ghibaudo and Y. Y. Noh*, Exploring the Charge Transport in Conjugated Polymers, Advanced Materials, 29, 41, Nov. 2017. Inside Front Cover
2.X.J. Guo*, Y. Xu*, S. Ogier*, T.N. Ng*, M. Caironi*, A. Perinot*, L. Li*, J.Q. Zhao, W. Tang, R.A. Sporea*, A. Nejim*, J. Carrabina*, P. Cain*, and F. Yan*, Current Status and Opportunities of Organic Thin-Film Transistors Technologies, IEEE Transactions on Electron Devices, 64, 1906-1921, 2017.
3.H.B. Sun, Y. Xu*, and Y. Y. Noh*, Flexible Organic Amplifier, IEEE Transactions on Electron Devices, 64, 1944-1954, 2017.
4.Y. Xu*, H.B. Sun and Y. Y. Noh*, Schottky Barrier in Organic Transistors, IEEE Transactions on Electron Devices, 64，pp.1932-1943, 2017.

2016
1.Y. Xu*, H.B. Sun, E.Y. Shin, Y.F. Lin, W.W. Li*, and Y. Y. Noh*, Planar-Processed Polymer Transistors, Advanced Materials, 28, 38, pp. 8531-8537, 2016.

2015
1.Y.F. Lin*, Y. Xu(Equal contribution), C.Y. Lin, Y.W. Suen, M. Yamamoto, S. Nakaharai, K. Ueno and K. Tsukagoshi*, Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors, Advanced Materials, 27, pp. 6612-6691, 2015.
2.Y. Y. Noh*, Y. Xu* (Guest Editor), M. Caironi* and TD Anthopoulos*, Preface: Printed electronics, Semiconductor Science and Technology, 30(10), pp. 100301, 2015.
3.B. NketiaYawson, H. Kang, E.Y. Shin, Y. Xu*, C.D. Yang* and Y. Y. Noh*, Effect of electron-donating unit on crystallinity and charge transport in organic field-effect transistors with thienoisoindigo-based small molecules, Organic Electronics, 26, pp. 151-157, 2015.
4.Y. Xu*, C. Liu*, P.S.K. Amegadez, G.S. Ryu, H.X. Wei, F. Balestra, G. Ghibaudo, and Y. Y. Noh*, On the Origin of Improved Charge Transport in Double-Gate In-Ga-Zn-O Thin-Film Transistors: A Low-Frequency Noise Perspective, IEEE Electron Device Letters, 10, pp.1040-1043, 2015.
5.W.T. Park, I. Son, H.W. Park, K.B. Chung, Y. Xu*, T. Lee* and Y.Y. Noh*, Facile Routes to Improve Performance of Solution-Processed Amorphous Metal Oxide Thin Film Transistors by Water Vapor Annealing, ACS Applied Materials & Interface, 7, pp. 13289-13294, 2015.
6.Y. Xu*, C. Liu, D.Y. Khim and Y. Y. Noh*, Development of High-Performance Printed Organic Field-Effect Transistors and Integrated Circuits, Physical Chemistry Chemical Physics, 17, pp. 26553-26574, 2015.
7.C. Liu, Y. Xu (Equal contribution), and Y. Y. Noh*, Contact engineering in organic field-effect transistors, Materials Today, 18, pp. 79-96, 2015.

2014
1.Y. Xu*, C. Liu, Paul S.K. Amegadez, W.T. Park, D.X. Long, T. Minari, F. Balestra, G. Ghibaudo and Y.Y. Noh*, Significant roles of low temperature post-metallization annealing in solution processed oxide thin film transistors, Applied Physics Letters, 105, 13, pp.133505-5, 2014.
2.Y. Xu, K.J. Baeg, W.T. Park, A. Cho, E.Y. Choi and Y. Y. Noh*, Regulating Charge Injection in Ambipolar Organic Field-Effect Transistors by Mixed Self-Assembled Monolayers, ACS Applied Materials & Interface, 6 (16), pp. 14493-14499, 2014.
3.D.Y. Khim, K.J. Baeg, M. Caironi, Y. Xu*, D.Y. Kim* and Y. Y. Noh*, Control of Ambipolar and Unipolar Transport in Organic Transistors by Selective Chemical Doping for High Performance Complementary Circuits, Advanced Functional Materials, 24, 40, pp. 6252-6261, 2014. Front Cover
4.Y. Xu*, C. Liu, H.B Sun, F. Balestra, G. Ghibaudo, W. Scheideler and Y. Y. Noh*, Metal evaporation dependent charge injection in organic transistors, Organic Electronics, 15, pp. 1738-1744, 2014.
5.C. Liu, Y. Xu*, G. Ghibuaod, X. Lu, T. Minari* and Y.Y. Noh*, Evaluating injection and transport properties of field-effect transistors by the convergence point in transfer-length method, Applied Physics Letters, 104, pp.013301-5, 2014.

2013
1.Y. Xu*, C. Liu*, W. Scheideler, S.L. Li, W.W. Li, Y.F. Lin, F. Balestra, G. Ghibaudo and K. Tsukagoshi*, Understanding Thickness Dependent Charge Transport in Pentacene Transistors by Low-Frequency Noise, IEEE Electron Device Letters, 34, pp. 1298-1300, 2013.
2.Y. Xu*, C. Liu, W. Scheideler, P. Darmawan, S.L. Li, F. Balestra, G. Ghibaudo and K. Tsukagoshi*, How Small The Contacts Could Be Optimal for Nanoscale Organic Transistors?, Organic Electronics, 14, pp. 1797-1804, 2013.
3.C. Liu, Y. Xu*, Y. Li, W. Scheideler and T. Minari*, Critical Impact of Gate Dielectric Interfaces on the Contact Resistance of High-Performance Organic Field-Effect Transistors, The Journal of Physical Chemistry C, 117, pp. 12337-12345, 2013.
4.Y. Xu*, W. Scheideler, C. Liu, F. Balestra, G. Ghibaudo and K. Tsukagoshi*, Contact Thickness Effects to Bottom-Contact Coplanar Organic Field-Effect Transistors, IEEE Electron Device Letters, 34, pp. 535-537, 2013.
5.Y. Xu*, C. Liu, Y. Li, T. Minari, P. Darmawan, F. Balestra, G. Ghibaudo and K. Tsukagoshi*, Joule’s law for organic transistors exploration: case of contact resistance, Journal of Applied Physics, 113, pp.064507-5, 2013. Certificate given by the Editor-in-Chief.

2012
1.Y. Xu*, P. Darmawan, C. Liu, Y. Li, T. Minari, G. Ghibaudo and K. Tsukagoshi*, Tunable contact resistance in double-gate organic field-effect transistors, Organic Electronics, 13, pp. 1583-1588, 2012.

2011
1.Y. Xu*, R. Gwoziecki, R. Coppard, M. Benwadih, T. Minari, K. Tsukagoshi, J. Chroboczek, F. Balestra and G. Ghibaudo, Diagnosis of low-frequency noise sources in contact resistance of staggered organic transistors, Applied Physics Letters, 98, 3, pp.033505-3, 2011.
2.Y. Xu*, F. Balestra and G. Ghibaudo, Theoretical analysis of carrier mobility in organic field-effect transistors, Applied Physics Letters, 98, pp.233302-3, 2011. ’Excellent’ evaluation given by peer reviewer
3.Y. Xu*, T. Minari, K. Tsukagoshi, J. Chroboczek, F. Balestra and G. Ghibaudo, Origin of low-frequency noise in pentacene field-effect transistors, Solid State Electronics, 61, 1, pp.106-110, 2011.
4.Y. Xu*, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, M. Benwadih, J. Chroboczek, F. Balestra and G. Ghibaudo, Modeling of static electrical properties in organic field-effect transistors, Journal of Applied Physics, 110, pp.014510-12, 2011.
5.Y. Xu*, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra and G. Ghibaudo, Power transfer-length method for full biasing contact resistance evaluation of organic field-effect transistors, Organic Electronics, 12, pp.2019-2024, 2011.
6.Y. Xu*, M. Benwadih, R. Gwoziecki, R. Coppard, T. Minari, C. Liu, K. Tsukagoshi, J. Chroboczek, F. Balestra and G. Ghibaudo, Carrier mobility in organic field-effect transistors, Journal of Applied Physics, 110, pp.104513-9, 2011.

2010
1.Y. Xu*, T. Minari, K. Tsukagoshi, R. Gwoziecki, R. Coppard, F. Balestra, J. Chroboczek and G. Ghibaudo, Extrac-tion of low-frequency noise in contact resistance of organic field-effect transistors, Applied Physics Letters, 97, 3, pp.033503-3, 2010.
2.Y. Xu*, R. Gwoziecki, I. Chartier, R. Coppard, F. Balestra and G. Ghibaudo, Modified transmission-line method for contact resistance extraction in organic field-effect transistors, Applied Physics Letters, 97, 6, pp.063302-3, 2010.
3.Y. Xu, T. Minari, K. Tsukagoshi, J. Chroboczek and G. Ghibaudo*, Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors, Journal of Applied Physics, 107, 11, pp.114507-7, 2010.