个人信息

姓　　名: 白刚 性　　別: 男 导师类型: 硕士生导师
技术职称: 副教授 电子邮箱: baigang@njupt.edu.cn
学术型硕士招生学科: (080903)微电子学与固体电子学
专业型硕士招生类别(领域): (085400)电子信息

个人简介:白刚，男，江苏南京人，1984年2月出生，2013年6月博士毕业于南京大学固体微结构物理国家重点实验室。2013年8月至今任职于南京邮电大学，微电子与固体电子学副教授，主要从事铁电压电材料与器件等研究工作。近年来主持承担了国家自然科学基金“外延BST薄膜多卡效应研究”，中国博士后面上一等资助项目“力电耦合条件下BaTiO3薄膜的极化制冷研究”，江苏省博士后面上项目“力电耦合条件下Ba1-xSrxTiO3薄膜的去极化制冷研究”，国家重点实验室开放基金项目“应力梯度调控铁电体的电热效应”，校引进人才项目“相变存储器材料的尺寸效应研究”， 校级科研项目“反铁电薄膜的电热效应”等6项。在APL、JAP、AIP advances、IEEE Trans Electron Device等国际学术期刊上共发表SCI论文近20篇。其中第一作者发表SCI学术论文14篇。曾指导大二学生发表二区sci论文。 中国物理学会会员。电子元器件关键材料与技术委员会委员。
研究领域:研究方向：1多铁异质结存储器模拟；2基于电卡效应的芯片制冷;3电介质储能.要求有较好的数学物理和编程能力（熟悉matlab、mathematica、C/C++、python等语言）.发表的主要论文：1.Gang Bai* , Qiyun Xie and Cunfa Gao, Electric-field-induced phase transition and electrocaloric effect in PZT near morphotropic phase boundary, Physica B, In press, 2019.2.Gang Bai*, Qiyun Xie, Jie Xu, Cunfa Gao, Large negative piezocaloric effect: Uniaxial stress effect, Solid State Communications, 291 (2019) 11–14.3.Gang Bai*, Qiyun Xie, Xueshi Qin, Jie Xu, Xiaobing Yan, and Cunfa Gao, A generalized thermodynamic frame of magneto-electriccaloric coupling effects of single phase epitaxialmultiferroic thin films, FERROELECTRICS, (2018)531: 186–195.4.Gang Bai*, Xiaobing Yan, Wei Li*, and Cunfa Gao, Physical properties in polydomain c/a/c/a phase PbTiO3 ferroelectric thick films: Effect of thermal stresses, Appl. Phys. A (2017) 123:562.5. Dongmei Wu, Renjie Ning, Gang Bai* , and Zhiguo Liu, Controlling magnetoelectric coupling effect in multiferroic heterostructure by using deposition temperatures and substrates, JOURNAL OF NANJING UNIVERSITY (NATURAL SCIENCES) (Chinese), 2017, 53:407.6. Gang Bai*, Kai Qin, Qiyun Xie, Xiaobing Yan, Cunfa Gao and Zhiguo Liu, Size dependent flexocaloric effect of paraelectric Ba0.67Sr0.33TiO3 nanostructures, Materials Letters, 2017,186:146-150.7. Gang Bai* , Dongmei Wu, QiyunXie, Yanyan Guo, Wei Li, Licheng Deng , and Zhiguo Liu，Pyroelectric response of SrTiO3/Si ferroelectric-semiconductor heterojunctions near room temperature，Journal of Advanced Dielectrics, 2015, 5:**-1-**-7.8. Gang Bai*, Zhiguo Liu, QiyunXie, YanyanGuo, Wei Li，Xiaobing Yan，The flexoelectric effect associated size dependent pyroelectricity in solid dielectrics，AIP ADVANCES，2015，5：097117-1-097117-7。9. Gang Bai*, QiyunXie, Zhiguo Liu, Dongmei Wu，Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate，J. Appl. Phys.，2015，118：074101-1-074101-5。10. Gang Bai*, Zhiguo Liu, Xiaobing Yan,，Changchun Zhang,，Impact of thermal stress on the piezoelectric and dielectric properties of PbTiO3 thick films on various substrates，J. Appl. Phys.，2014，116（5）：054103-1-054103-5。11. G. Bai, X. Gong, Z. G. Liu*, Y. D. Xia, J. Yin，External stress enhanced magnetoelectric coupling in multiferroicheterostructures，J. Appl. Phys.，2012，112（11）：114121-1-114121-6。12. G. Bai, R. Li, Z.G. Liu*, Y.D. Xia,，J. Yin，Tuned dielectric, pyroelectric and piezoelectric properties of ferroelectric P(VDF-TrFE) thin films，J. Appl. Phys.，2012，111（4）：044102-1-044102-4。13. Gang Bai, Zhiguo Liu*, Yidong Xia,，Jiang Yin，Phase change behaviour and critical size of Ge2Sb2Te5 nanowires and nanotubes，Physica B，2013，411：68-71。14. G. Bai, R. Li, H.N. Xu, Y.D. Xia, Z.G. Liu*, H.M.，J. Yin，The thickness dependence of the crystallization behavior in sandwiched amorphous Ge2Sb2Te5 thin films，Physica B，2011，406（23）：4033-4039。15. Gang Bai，Wenhui Ma*，Phenomenological analysis of phase transitions in epitaxial perovskite ferroelectric thin films，Physica B，2010，405（7）：1901-1907。16. Wei Li,??EnWen Dai,??Gang Bai,?Jie Xu, ?Depth-dependent humidity sensing properties of silicon nanopillar array, Sensors and Actuators B, 2016, 237 :526–533.17. Xiaobing Yan*, Yucheng Li, Jianhui Zhao, Yan Li, Gang Bai, and Siqi Zhu, Roles of grain boundary and oxygen vacancies in Ba0.6Sr0.4TiO3 films for resistive switching device application, Applied Physics Letters, 2016, 108:033108-1-033108-5.18. Xiaobing Yan*, Erpeng Zhang, Hua Hao, Yingfang Chen, Gang Bai, Qi Liu, Jianzhou Lou, Baoting Liu, and Xiaoting Li, Highly Transparent Bipolar Resistive Switching emory in Zr0.5Hf0.5O2 Films With Amorphous Semiconducting In–Ga–Zn–O as Electrode, IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62(10): 3244-3249.19. R. Li, S.Y. Tang, G. Bai, Q. N. Yin, X. X. Lan, J. Yin*, Z. G. Liu，Investigations on GeTe4 as a candidate for phase change memory application.，Chin. Phys. Lett.，2013，30（5）：058101-1-058101-3.