陈鹏微电子与光电子学系 博导



个人简历
2000年12月在南京大学物理系获理学博士学位，2001年至2007年历任新加坡科研局材料研究院研究员、首席科学家、新加坡国立大学电机工程系博士生导师。2008年度进入“江苏省高层次创新创业人才引进计划”获创新人才资助，2008年进入江苏省“333高层次人才培养工程”第二层次，并于2011年获“‘333人才工程'突出贡献奖”，2010年获“江苏省有突出贡献的中青年专家”称号，2011获得“中国产学研创新奖个人奖”。自1995年以来长期从事于三族氮化物半导体材料与器件研究，取得了一批世界首创、国内领先的研究成果。主持过3项、参加5项国际合作项目，2015年作为首席专家主持国家“863”重点项目“第三代半导体器件与评价技术”，另外还主持和参加多项国家“973”、“863”、国家自然基金、江苏省重点研发项目等重大研究项目。申请国际发明专利7项，6项已获授权，申请国家发明专利30余项。共发表学术论文170余篇，其中SCI收录140余篇，其中以第一作者及通讯作者在半导体光电子学、半导体纳米材料与纳米技术、强注入辐射机制等研究领域发表的高水平论文30余篇，包括Advanced Materials，Advanced Optical Materials，Small，Applied Physics Letters、IEEE Photonics Journal等论文多篇，总被引用1800余次，H因子23。参与编著专著四部。




研究方向
1. III族氮化物半导体微纳结构的半导体光电子学与等离激元光子学研究；
2. III族氮化物半导体的固体电子学与功率电子器件研究；
3. Si衬底上的III族氮化物半导体材料与光电子学研究；
4. 基于III族氮化物半导体的固态照明技术研究；
5. GaN自支撑衬底同质外延技术及其器件研究。

主要课程
本科生：新生研讨课-半导体光电子材料与器件；
信息电子学前沿实验；
研究生：光电子材料与器件；
Semiconductor Optoelectronics

代表成果

1.Yimeng Li, Peng Chen*,Xiufang Chen*, et.al., High-Responsivity Graphene/4H-SiC Ultraviolet Photodetector Based on a Planar Junction Formed by the Dual Modulation of Electric and Light Fields,
Advanced Optical Materials,**, (2020).

2.Tao Tao, Ting Zhi, Bin Liu*, Peng Chen*,et.al., Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region,

Small, 16, **, (2020).

3.Ru Xu , Peng Chen*,Menghan Liu, et.al., 1.4-kV Quasi-Vertical GaN Schottky Barrier Diode with Reverse p-n Junction Termination,

IEEE Journal of the Electron Devices Society, Vol. 8, 316 (2020).

4.Menghan Liu , Peng Chen*,Jing Zhou, et.al., Realization of regular resonance mode in GaN-based polygonal microdisks on Si,
J. Appl. Phys. 127, 113102 (2020).

5.Meng-Han Liu(刘梦涵), Peng Chen(陈鹏)*,Zi-Li Xie(谢自力), et.al., Approach to Single-Mode Dominated Resonant Emission in GaN-Based Square Microdisks on Si,

Chin. Phys. Lett. Vol. 37, No. 5, 054204 (2020).

6. Jing Zhou, Peng Chen*,Meng-Han Liu, et.al., Study on the self-absorption of InGaN quantum wells at high photon density,

Applied Optics, Vol. 59, No. 16, 4790 (2020).

7. Ningze Zhuo, Na Zhang, Peng Chen*and Haibo Wang*, Enhancement of efficiency and CCT uniformity for red phosphor thin films, red LEDs and laminated white LEDs based on near-ultraviolet LEDs using MgO nanoparticles,
RSC Advances，9, 28291, 2019

8. Ningze Zhuo, Na Zhang, Teng Jiang, Peng Chen*and Haibo Wang*, Effect of particle sizes and mass ratios of a phosphor on light color performance of a green phosphor thin film and a laminated white lightemitting diode,

RSC Advances， 9, 27424, 2019

9. Jiang, Fulong; Liu, Yaying; Chen, Peng*;et al.,The Study on the Droop Effect in the InGaN/AlGaInN MQWs With Lattice-Matched AlGaN/InGaN Superlattices Barrier by Highly Excited Photoluminescence Measurementctions，

IEEE PHOTONICS JOURNAL， 卷:10，期:2，文献号: **，APR 2018

10. Yang, G. F.; Chen, P.*; Wang, M. Y.; et al., Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facets,

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES Volume: 45 Pages: 61-65 Published: AUG 2012

11. P. Chen,A. Chen，S. J. Chua, and J. N. Tan，Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures，

ADVANCED MATERIALS, Vol 19(13), 1707-1710, 2007

12. P. Chen,S. J. Chua, and J. N. Tan, High-density InGaN nanodots grown on pretreated GaN surfaces,

APPLIED PHYSICS LETTERS, 89, 023114, 2006

13. P. Chen,S. J. Chua, Y. D. Wang, M. S. Sander, and C. G. Fonstad, InGaN Nanorings and Nanodots by Selective Area Epitaxy,
APPLIED PHYSICS LETTERS, 87, 143111, 2005

14. H.W.Choi, K.N.Hui, P.Lai, P.Chen,X.H.Zhang, S.Tripathy, J.H.Teng, and S.J.Chua, Lasing in GaN microdisks pivoted on Si,
APPLIED PHYSICS LETTERS, 89, 211101, 2006

15.P Chen,SJ Chua, WD Wang, DZ Chi, ZL Miao, YD Zheng, Influence of The Polarization on Interfacial Properties In Al/SiO2/N/Al0.4Ga0.6N/GaN Heterojunction Metal-Insulator-Semiconductor Structures,
JOURNAL OF APPLIED PHYSICS,94 (7): 4702-4704, 2003

16. Chen Peng,Chua Soo-Jin, Miao Zhonglin and Tripathy Sudhiranjan, “Method and Structure for Fabricating III-V Nitride Layers on Silicon Substrates”Patent application filed on 2 February 2005 in US patent office, granted in 2011 (US 60/648,710; 11/344,472; 7,910,937 B2 ).

17. Chua Soo-Jin, Chen Pengand Takasuka, Eiryo, “Group-III Nitride White Light Emitting Diode”, PCT application filed in Singapore in 2005, granted in 2008 (PCT/SG2005/000099), filed on 10 Dec, 2009 in US patent office (US 2009/** A1 ).

18.Chua Soo-Jin, Chen Pengand Wang Yadong, “Nanostructures and Method of Making the Same”, PCT application filed on 31-Aug-2004 in Singapore, granted in 2007 (PCT/SG2004/000274, WO 2006/025793A1, 130414), published on 1-Mar-06 in Taiwan (TW).



联系方式
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