刘斌微电子与光电子学系 教授、博导



个人简历
刘斌，教授，博导，电子学院副院长，分管本科教学与人才培养工作；2003年本科毕业于中山大学理工学院，2008年毕业于南京大学物理系微电子与固体电子学专业,获博士学位，其博士论文获得全国优秀博士论文提名奖，曾先后在英国谢菲尔德大学III-V族半导体国家研究中心、瑞典皇家工学院(KTH)、美国耶鲁大学，香港中文大学等访问研究。他长期 III族氮化物异质结构和光电子器件，半导体固态照明与显示技术 ，2010年获得霍英东教育基金会青年基金资助，2012年获得教育部新世纪优秀人才计划支持，2014年获国家自然科学基金委优秀青年基金资助，2016年入选教育部青年****。主持国家重点研发计划项目，自然科学基金项目3项、省部级项目10余项，参加国家重大研究“973”、“863”计划项目多项。截止目前，已在Advanced Materials，Advanced Functional Materials, Nano Letters, Applied Physics Letters,IEEE EDL、TED、PTL等重要学术期刊上发表学术论文180余篇，其中第一/通讯作者63篇，申请/授权中国或美国发明专利60余项，成果荣获教育部自然科学一等奖、技术发明一等奖，中国产学研合作创新成果一等奖等。

研究方向
1.宽带隙半导体材料及异质结构；2.III族氮化物半导体光电子器件；3.半导体固态照明与Micro-LED显示技术

主要课程
本科生：《半导体物理与器件》、《半导体物理》、《南京大学科学之光》、《微电子与光电子前沿讲座》
研究生：《高等半导体物理》、《光电子材料与器件》

代表成果
2015-2020
1. Semi-polar (20-21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent/ APPLIED PHYSICS EXPRESS卷: ?13期: ?9 文献号: 091002 出版年: ?2020 (通讯作者，Compound Semiconductor报道)
2. The optimization of surface plasmon coupling efficiency in InGaN/GaN nanowire based nanolasers/APPLIED PHYSICS EXPRESS 卷: ?13 期: ?8 文献号: 085001 出版年: ?2020 (通讯作者，APEX Latest Spotlights)
3. Band Alignment and Interface Recombination in NiO/beta-Ga₂O₃Type-II p-n Heterojunctions/IEEE TRANSACTIONS ON ELECTRON DEVICES 卷: ? 67 期: ? 8 页: ? 3341-3347 出版年: 2020
4. Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes based on III-Nitride Semiconductors/ADVANCED MATERIALS 卷: ?32 期: ?27 文献号: ** 出版年: ?2020 (第一作者)
5. epsilon-Ga₂O₃: A Promising Candidate for High-electron-Mobility Transistors/IEEE ELECTRON DEVICE LETTERS 卷: ?41期: ?7页: ?1052-1055出版年: ?2020
6. Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations/IEEE TRANSACTIONS ON ELECTRON DEVICES 卷: ?67 期: ?3 页: ?841-846 出版年: 2020 (通讯作者)
7. High-Performance Semi-Polar InGaN/GaN Green Micro Light-Emitting Diodes/IEEE PHOTONICS JOURNAL 卷: ?12 期: ?1 出版年: 2020 (通讯作者)
8. Plasmon-enhanced photoelectrochemical water splitting by InGaN/GaN nano-photoanodes/ SEMICONDUCTOR SCIENCE AND TECHNOLOGY 卷: ?35 期: ?2 文献号: 025017 出版年: 2020 (通讯作者)
9. The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates/ NANOTECHNOLOGY 卷: ?31期: ?4 文献号: 045604 出版年: 2020 (通讯作者)
10. Improvement of the interfaces in AlGaN/AlN superlattice grown by NH3 flow-rate modulation epitaxy/ APPLIED PHYSICS EXPRESS 卷: ?13 期: ?1 文献号: 015511 出版年: 2020 (通讯作者)
11. Improved Performance of Hybrid Organic/Inorganic p-n Heterojunction White Light-Emitting Diodes with 4,4 '-Cyclohexane-1,1-diylbis[N,N-bis(4-methylphenyl)aniline] as a Multifunctional Hole Transport Layer/PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 卷: ?217 期: ?7 特刊: ?SI 文献号: ** 出版年: 2020 (通讯作者，封面高亮论文)
12. Electron-Beam-Driven III-Nitride Plasmonic Nanolasers in the Deep-UV and Visible Region/SMALL 卷: ?16 期: ?1 文献号: ** 出版年: ?2020 (通讯作者，封面高亮论文—Small十周年推荐论文)
13. Synthesis and Properties of InGaN/GaN Multiple Quantum Well Nanowires on Si (111) by Molecular Beam Epitaxy/PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE 卷: ?217 期: ?7 特刊: ?SI 文献号: ** 出版年: 2020 (通讯作者，封面高亮论文)
14. Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate/CHINESE PHYSICS LETTERS 卷: ?36 期: ?8 文献号: 088501 出版年: ?2019(通讯作者)
15. A High-Performance SiO2/SiNx 1-D Photonic Crystal UV Filter Used for Solar-Blind Photodetectors /IEEE PHOTONICS JOURNAL 卷: ?11 期: ?4 文献号: ** 出版年: 2019
16. Observation and Modeling of Leakage Current in AlGaN Ultraviolet Light Emitting Diodes/ IEEE PHOTONICS TECHNOLOGY LETTERS 卷: ?31 期: ?21 页: ?1697-1700 出版年: ?2019 (通讯作者)
17. Electrically Injected Hybrid Organic/Inorganic III-Nitride White Light-Emitting Diodes Based on Rubrene/(InGaN/GaN) Multiple-Quantum-Wells P-N Junction/IEEE PHOTONICS JOURNAL 卷: ?11 期: ?4 文献号: ** 出版年: 2019 (通讯作者)
18. Single-crystal GaN layer converted from beta-Ga2O3 films and its application for free-standing GaN/ CRYSTENGCOMM 卷: ? 21 期: ? 8 页: ? 1224-1230 出版年: 2019
19. Homo-epitaxial growth of high crystal quality GaN thin films by plasma assisted-molecular beam epitaxy/ JOURNAL OF CRYSTAL GROWTH 卷: ?506 页: ?30-35 出版年: 2019 (通讯作者)
20. Hybrid Cyan Nitride/Red Phosphors White Light-Emitting Diodes With Micro-Hole Structures/IEEE PHOTONICS JOURNAL 卷: ?10 期: ?5 文献号: ** 出版年: 2018 (通讯作者)
21. Influence of high Mg doping on the microstructural and optoelectrical properties of AlGaN alloys/ SUPERLATTICES AND MICROSTRUCTURES 卷: ?119 页: ?150-156 出版年: 2018 (通讯作者)
22. Enhanced p-type conduction in AlGaN grown by metal-source flow-rate modulation epitaxy/ APPLIED PHYSICS LETTERS 卷: ?113 期: ?7 文献号: 072107 出版年: 2018 (通讯作者)
23. Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes/ IEEE PHOTONICS TECHNOLOGY LETTERS 卷: ?29 期: ?17 页: ?1447-1450 出版年: 2017
24. Fabrication of AI GaN nanorods with different AI compositions for emission enhancement in UV range/ NANOTECHNOLOGY 卷: ?28 期: ?38 文献号: 385205 出版年: 2017 (通讯作者)
25. Manipulable and Hybridized, Ultralow-Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods/ ADVANCED FUNCTIONAL MATERIALS 卷: ?27 期: ?37 文献号: ** 出版年: ?2017 (通讯作者，封面高亮论文)
26. Study of LED Thermal Resistance and TIM Evaluation Using LEDs With Built-in Sensor/ IEEE PHOTONICS TECHNOLOGY LETTERS 卷: ?29 期: ?21 页: ?1856-1859 出版年: ?2017
27. Polarized Emission From InGaN/GaN Single Nanorod Light-Emitting Diode/ IEEE PHOTONICS TECHNOLOGY LETTERS 卷: ?28 期: ?7 页: ?721-724 出版年: 2016 (通讯作者)
28. Design and fabrication of UV band-pass filters based on SiO2/Si3N4 dielectric distributed bragg reflectors/ APPLIED SURFACE SCIENCE 卷: ?364 页: ?886-891 出版年: ?2016 (通讯作者)
29. Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale/ NANOTECHNOLOGY 卷: ?27 期: ?1 文献号: 015301 出版年: ?2016 (通讯作者，封面高亮论文)
30. High Color Rendering Index Hybrid III-Nitride/Nanocrystals White Light-Emitting Diodes/ ADVANCED FUNCTIONAL MATERIALS 卷: ?26 期: ?1 页: ?36-43 出版年: 2016(通讯作者，封面高亮论文)
31. Reverse leakage current characteristics of GaN/InGaN multiple quantum-wells blue and green light-emitting diodes/ IEEE PHOTONICS JOURNAL 卷: ?8 期: ?5 文献号: ** 出版年: 2016 (通讯作者)
32. Significant improvements in InGaN/GaN nano-photoelectrodes for hydrogen generation by structure and polarization optimization/ SCIENTIFIC REPORTS 卷: ?6 文献号: 20218 出版年: 2016(通讯作者)
33. AlGaN-Based Multiple Quantum Well Deep Ultraviolet Light-Emitting Diodes With Polarization Doping/ IEEE PHOTONICS JOURNAL 卷: ?8 期: ?1 文献号: ** 出版年: 2016
34. Single nanowire green InGaN/GaN light emitting diodes/ NANOTECHNOLOGY 卷: ?27 期: ?43 文献号: 435205 出版年: 2016 (通讯作者)
35. Improvement of color conversion and efficiency droop in hybrid light-emitting diodes utilizing an efficient non-radiative resonant energy transfer/ APPLIED PHYSICS LETTERS 卷: ?109 期: ?14 文献号: 141105 出版年: 2016 (通讯作者)
36. In-Situ Measurement of Junction Temperature and Light Intensity of Light Emitting Diodes With an Internal Sensor Unit/IEEE ELECTRON DEVICE LETTERS 卷: ?36 期: ?10 页: ?1082-1084 出版年: 2015
37. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface/JOURNAL OF APPLIED PHYSICS 卷: ?117 期: ?15 文献号: 153103 出版年: ?2015 (通讯作者)
38. Optical polarization characteristics of c-plane InGaN/GaN asymmetric nanostructures/ JOURNAL OF APPLIED PHYSICS 卷: ?118 期: ?23 文献号: 233111 出版年: 2015 (通讯作者)
39. Asymmetric tunneling model of forward leakage current in GaN/InGaN light emitting diodes/AIP ADVANCES 卷: ?5 期: ?8 文献号: 087151 出版年: 2015 (通讯作者)
40. Enhanced opto-electrical properties of graphene electrode InGaN/GaN LEDs with a NiOx inter-layer/SOLID-STATE ELECTRONICS 卷: ?109 页: ?47-51 出版年: 2015 (通讯作者)
41. Enhanced non-radiative energy transfer in hybrid III-nitride structures/APPLIED PHYSICS LETTERS 卷: ?107 期: ?12 文献号: 121108 出版年: 2015
Before 2015
42. Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes/JOURNAL OF APPLIED PHYSICS 卷: ? 116 期: ? 1 文献号: 013101 出版年: 2014(通讯作者)
43. Temporally and spatially resolved photoluminescence investigation of (11(2)over-bar2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates/APPLIED PHYSICS LETTERS 卷: ? 105 期: ? 26 文献号: 261103 出版年: 2014 (第一作者)
44. Large-scale fabrication and luminescence properties of GaN nanostructures by a soft UV-curing nanoimprint lithography/NANOTECHNOLOGY 卷: ? 24 期: ? 40 文献号: 405303 出版年: 2013(通讯作者，封面高亮论文)
45. Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes/IEEE PHOTONICS TECHNOLOGY LETTERS 卷: ? 25 期: ? 15 页: ? 1510-1513 出版年: 2013(通讯作者)
46. Great emission enhancement and excitonic recombination dynamics of InGaN/GaN nanorod structures/APPLIED PHYSICS LETTERS 卷: ? 103 期: ? 10 文献号: 101108 出版年: 2013 (第一作者)
47. Hybrid III-Nitride/Organic Semiconductor Nanostructure with High Efficiency Nonradiative Energy Transfer for White Light Emitters/NANO LETTERS 卷: ? 13 期: ? 7 页: ? 3042-3047 出版年: 2013
48. Improvements in Microstructure and Leakage Current of High-In-Content InGaN p-i-n Structure by Annealing/IEEE PHOTONICS TECHNOLOGY LETTERS 卷: ? 24 期: ? 17 页: ? 1478-1480 出版年: 2012 (通讯作者)
49. Magnetic and electrical properties of epsilon-Fe₃N on c-plane GaN/JOURNAL OF PHYSICS D-APPLIED PHYSICS 卷: ? 45 期: ? 31 文献号: 315002 出版年: 2012 (通讯作者)
50. Composition pulling effect and strain relief mechanism in AlGaN/AlN distributed Bragg reflectors/APPLIED PHYSICS LETTERS 卷: ? 98 期: ? 26 文献号: 261916 出版年: 2011 (第一作者)
51. Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films/APPLIED PHYSICS A 卷: ? 99 期: ? 1 页: ? 139-143 出版年: 2010 (第一作者)
52. Polarization and temperature dependence of photoluminescence of m-plane GaN grown on gamma-LiAlO2 (100) substrate/APPLIED PHYSICS LETTERS 卷: ? 95 期: ? 6 文献号: 061905 出版年: 2009(第一作者)
53. Improved Performances of InGaN Schottky Photodetectors by Inducing a Thin Insulator Layer and Mesa Process/IEEE ELECTRON DEVICE LETTERS 卷: ? 30 期: ? 6 页: ? 605-607 出版年: 2009
54. Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced p-i-n UV PDs/ IEEE JOURNAL OF QUANTUM ELECTRONICS 卷: ? 45 期: ? 5-6 页: ? 575-578 出版年: 2009
55. Al incorporation, structural and optical properties of AlxGa1-xN (0.13 <= x <= 0.8) alloys grown by MOCVD/ JOURNAL OF CRYSTAL GROWTH 卷: ? 310 期: ? 21 页: ? 4499-4502 出版年: 2008 (第一作者)
56. Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction/JOURNAL OF APPLIED PHYSICS 卷: ? 103 期: ? 2 文献号: 023504 出版年: 2008 (第一作者)
57. Anisotropic crystallographic properties, strain, and their effects on band structure of m-plane GaN on LiAlO2(100)/ APPLIED PHYSICS LETTERS 卷: ? 92 期: ? 26 文献号: 261906 出版年: 2008 (第一作者)
58. Two-step growth of m-plane GaN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition/JOURNAL OF CRYSTAL GROWTH 卷: ? 298 特刊: ? SI 页: ? 228-231 出版年: 2007
59. The template effects on AlN/Al0.3Ga0.7N distributed Bragg reflectors grown by MOCVD/JOURNAL OF CRYSTAL GROWTH 卷: ? 298 特刊: ? SI 页: ? 357-360 出版年: 2007 (第一作者)
60. The high mobility InN film grown by MOCVD with GaN buffer layer/JOURNAL OF CRYSTAL GROWTH 卷: ? 298 特刊: ? SI 页: ? 409-412 出版年: ? 2007
61. Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates/APPLIED PHYSICS LETTERS 卷: ? 91 期: ? 25 文献号: 253506 出版年: 2007 (第一作者)
62. Comment on Radiative and nonradiative recombination process in InN films grown by metal organic chemical vapor deposition / APPLIED PHYSICS LETTERS 卷: ? 87 期: ? 17 文献号: 176101 出版年: 2005 (第一作者)




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