Kevin Jing CHEN 陳敬
Telephone Number (852) 2358 8969
Email Email
eekjchen@ust.hk
Office Room 2421
Links Personal Web
Google Scholar npmd96IAAAAJ
ORCID 0000-0002-0659-2022
Scopus ID 1
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First Name (and Middle Name If Any)
Kevin Jing
CHEN
陳敬
Highest Degree Acquired (e.g. PhD in Engineering Science)
PhD in Electrical Engineering, The University of Maryland
Related Web Titles
Chair Professor, Department of Electronic and Computer Engineering
Director of Nanosystem Fabrication Facility
Contact Information Telephone Number (852) 2358 8969
Email Email
eekjchen@ust.hk
Office Room 2421
Links Personal Web
Google Scholar npmd96IAAAAJ
ORCID 0000-0002-0659-2022
Scopus ID 1
Research Interests Research Interests
Compound semiconductor materials and devices
Gallium nitride (GaN)-based microwave power transistors
High-frequency semiconductor devices
Power semiconductor devices and ICs
Wide-bandgap semiconductor devices
Biography Biography
Prof Chen received a BS degree in Department of Electronics, Peking University in 1988. On a CUSPEA (China-US?Physics Examinations and Applications) fellowship, he went to University of Maryland, College Park, USA, in 1988, and obtained his PhD in 1993. From Jan?1994 to Dec?1995, he was a Research Engineer in NTT LSI laboratories, Atsugi, Japan, engaging in the research and development of functional quantum effect devices and heterojunction FET's (HFET's). In particular, he developed the device technology for monolithic integration of resonant tunneling diodes and HFET's (MISFET and HEMT) on both GaAs and InP substrates, for applications in ultra-high speed signal processing and communication systems. He also developed the enhancement-mode HEMT technology for single polarity voltage supply RF/microwave circuits.
From 1996 to 1998, he was an Assistant Professor in the Department of Electronic Engineering, City University of Hong Kong, carrying out research on high-speed device and circuit simulations. Prof Chen then joined the wireless semiconductor division of Agilent Technologies, Inc. (formerly Hewlett-Packard Co.), Santa Clara, California, in 1999 working on RF power amplifiers used in dual-band GSM/DCS wireless handsets. His work at Agilent covered RF characterization and modeling of microwave transistors, RF IC and package design. Prof Chen joined HKUST in Nov?2000.
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Research Interests Research Interests
Compound semiconductor materials and devices
Gallium nitride (GaN)-based microwave power transistors
High-frequency semiconductor devices
Power semiconductor devices and ICs
Wide-bandgap semiconductor devices
Biography Biography
Prof Chen received a BS degree in Department of Electronics, Peking University in 1988. On a CUSPEA (China-US?Physics Examinations and Applications) fellowship, he went to University of Maryland, College Park, USA, in 1988, and obtained his PhD in 1993. From Jan?1994 to Dec?1995, he was a Research Engineer in NTT LSI laboratories, Atsugi, Japan, engaging in the research and development of functional quantum effect devices and heterojunction FET's (HFET's). In particular, he developed the device technology for monolithic integration of resonant tunneling diodes and HFET's (MISFET and HEMT) on both GaAs and InP substrates, for applications in ultra-high speed signal processing and communication systems. He also developed the enhancement-mode HEMT technology for single polarity voltage supply RF/microwave circuits.
From 1996 to 1998, he was an Assistant Professor in the Department of Electronic Engineering, City University of Hong Kong, carrying out research on high-speed device and circuit simulations. Prof Chen then joined the wireless semiconductor division of Agilent Technologies, Inc. (formerly Hewlett-Packard Co.), Santa Clara, California, in 1999 working on RF power amplifiers used in dual-band GSM/DCS wireless handsets. His work at Agilent covered RF characterization and modeling of microwave transistors, RF IC and package design. Prof Chen joined HKUST in Nov?2000.
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香港科技大学工学院老师教师导师介绍简介-Kevin Jing CHEN 陈敬
本站小编 Free考研考试/2022-02-01
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