Publication in refereed journal
香港中文大学研究人员 ( 现职)
| 郝少康教授 (物理系) |
| 魏尔逊教授 (电子工程学系) |
全文
| 数位物件识别号 (DOI) http://dx.doi.org/10.1063/1.117272 |
引用次数
Web of Sciencehttp://aims.cuhk.edu.hk/converis/portal/Publication/11WOS source URL
其它资讯
摘要Two types of p(-) porous silicon (PS) were formed in HF solutions of different concentrations. One type with nanoscale (NS) dimensions of about 3 nm and the other with dimensions of about 5 nm. PS samples formed in the lower concentration of HF were anodized again in the higher concentration of HF and vice versa. The photoluminescence peak position and, thus, the size of NS units of PS were found to be related to the concentration of HF in which the PS is formed, independent of the forming time. The larger NS units of PS can be further electrochemically etched by anodization, while the smaller ones cannot. These results give a confirming evidence for the quantum confined electrochemistry model of the formation mechanism of PS based on the quantum confinement effect and classical electrochemical theory [S. L. Zhang, K. S. Ho, Y. T. Hou, B. D. Qian, P. Diao, and S. M. Cai, Appl. Phys. Lett. 62, 642 (1993)]. (C) 1996 American Institute of Physics.
着者Jia L, Zang SL, Wong SP, Wilson IH, Hark SK, Liu ZF, Cai SM
期刊名称Applied Physics Letters
出版年份1996
月份http://aims.cuhk.edu.hk/converis/portal/Publication/11
日期25
卷号69
期次22
出版社AMER INST PHYSICS
页次3399 - 3401
国际标準期刊号0003-6951
电子国际标準期刊号1077-3http://aims.cuhk.edu.hk/converis/portal/Publication/118
语言英式英语
Web of Science 学科类别Physics; Physics, Applied; PHYSICS, APPLIED
