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肖永光讲师主页

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| 基本信息 | 个人简介| 学习工作经历| 主讲课程| 研究方向| 获奖情况| 科研项目| 主要代表性论文

基本信息

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姓名:肖永光
职称:讲师
电话:**
电子信箱:ygxiao@xtu.edu.cn
办公室:二教504
个人主页:欢迎访问肖永光个人主页

个人简介

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肖永光，男，党员，博士/讲师，硕士生导师，2008年6月毕业于湘潭大学材料与光电物理学院微电子学本科专业。2008年9月被推荐免试攻读湘潭大学材料与光电物理学院微电子学与固体电子学硕士专业，2010年9月转为材料科学与工程专业硕博连读博士研究生，于2013年6月获得博士学位。主要从事铁电场效应晶体管存储器的微观结构设计和性能优化研究。主持国家自然科学基金青年项目1项，国家自然科学基金面上项目子项1项，湘潭大学科研启动项目1项，同时作为骨干成员参与了多项国家自然科学基金研究。近年来，在Applied Physics Letters、IEEE Transactions on Electron Devices、 Journal of Applied Physics等国内外著名刊物上发表学术论文30余篇，研究成果得到国内外同行的高度评价， 欢迎有志之士报考我的研究生，与我一起做研究。
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学习工作经历

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2004.09~2008.06 湘潭大学材料与光电物理学院微电子学专业 大学本科毕业

2008.09~2013.06 湘潭大学材料与光电物理学院 材料科学与工程专业博士研究生

2013.07~ 湘潭大学材料科学与工程学院 讲师 硕士生导师

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主讲课程

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本科生课程

1.《量子力学基础》

2.《模拟电子技术基础》

研究生课程

1.《微电子材料与器件》
2.《微纳电子学与器件》
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研究方向

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1. 集成电路设计

2. 铁电场效应晶体管存储器(FeFET)、多铁隧道结及器件

3. 铁电薄膜的负电容效应

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获奖情况

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2012年，获湘潭大学2012年首批博士研究生国家奖学金(3万元)。

2013年，湘潭市自然科学优秀学术论文一等奖(排名第1)。

2014年，湖南省第十五届自然科学优秀学术论文二等奖(排名第2)。

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科研项目

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主持的科研项目
1. 2015.01-2017.12，铁电场效应晶体管的负电容效应研究，国家自然科学基金青年项目(**)

2. 2013.09-2015.09，铁电场效应晶体管的低功耗研究，湘潭大学科研启动资金

3. 2011.04-2013.04，负电容场效应晶体管的电学性能研究，湖南省研究生创新项目(CX2011B248)。

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主要代表性论文

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[1] Y. G. Xiao, M. H. Tang, J. C. Li, C. P. Cheng, B. Jiang, H. Q. Cai, Z. H. Tang, X. S. Lv, and X. C. Gu, Temperature effect on electrical characteristics of negative capacitance ferroelectric field-effect transistors. Applied Physics Letters, 100 (8), 083508, 2012.

[2] Y. G. Xiao, Y. Xiong, M. H. Tang, J. C. Li, C. P. Cheng, B. Jiang, Z. H. Tang, X. S. Lv, H. Q. Cai, X. C. Gu, and Y. C. Zhou, Effect of doping concentration of substrate silicon on retention characteristics in metal-ferroelectric-insulator-semiconductor capacitors. Applied Physics Letters, 100 (17), 173504, 2012.

[3] Y. G. Xiao, Z. J. Chen, M. H. Tang, Z. H. Tang, S. A. Yan, J. C. Li, X. C. Gu, Y. C. Zhou, and X. P. Ouyang, Simulation of electrical characteristics in negative capacitance surrounding-gate ferroelectric field-effect transistors. Applied Physics Letters, 101 (25), 253511, 2012.

[4] Y. G. Xiao, M. H. Tang, Y. Xiong, J. C. Li, C. P. Cheng, B. Jiang, H. Q. Cai, Z. H. Tang, X. S. Lv, X. C. Gu, and Y. C. Zhou, Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors. Current Applied Physics, 12, 1591-1595, 2012.

[5] Y. G. Xiao, Y. Xiong, M. H. Tang, J. C. Li, X. C. Gu, C. P. Cheng, B. Jiang, Z. H. Tang, X. S. Lv, H. Q. Cai, and J. He, Factors for the polarization lifetime in metal-ferroelectric-insulator-semiconductor capacitors. Solid State Electronics, 73, 84-88, 2012.

[6] Y. G. Xiao, M. H. Tang, J. C. Li, B. Jiang and J. He, The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. Microelectronics Reliability, 52 (4), 757-760, 2012.

[7] Y. G. Xiao, M. H. Tang, H. Y. Xu, J. He, Ferroelectric properties and leakage behavior in poly (vinylidene fluoride-trifluoroethylene) ferroelectric thin films with additive diethyl phthalate. Integrated Ferroelectrics, 125 (1), 89-97, 2011.

[8] Y. G. Xiao, M. H. Tang, J. C. Li, The influence of field-dependent carrier mobility and permittivity on space-charge-limited leakage current characteristics in high dielectric constant and ferroelectric thin films. 2011 11th Non-Volatile Memory Technology Symposium (NVMTS 2011), pp.1-5, 2011.

[9] Y. G. Xiao, M. H. Tang, Z. Li, and Y. C. Zhou，Effect of interface and fixed charges in ferroelectric field-effect transistors. Submitted to Microelectronics Reliability. 2014. (Revised).

[10] M. H. Tang, Y. G. Xiao, B. Jiang, J. W. Hou, J. C. Li, and J. He, The giant dielectric tunability effect in bulk Y₂NiMnO₆ around room temperature. Applied Physics A, 105 (3), 679-683, 2011.

[11] M. H. Tang, Y. G. Xiao, L. B. Zhang, X. L. Xu, J. Zhang, J. X. Tang, Transient effects of graded-channel partially depleted SOI nMOSFET. 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Proceedings (ICSICT2010), IEEE Press, pp. 1792-1795, 2010.

[12] Z. J. Chen, Y. G. Xiao, M. H. Tang, Y. Xiong, J. Q. Huang, J. C. Li, X. C. Gu, and Y. C. Zhou, Surface-potential-based drain current model for long-channel junctionless double-gate MOSFETs. IEEE Transactions on Electron Devices, 59 (12), 3292-3298, 2012.

[13] B. Jiang, M. H. Tang, Y. G. Xiao, H. Z. Tao, Y. C. Zhou, J. He, Microstructures, phase transition and piezoelectric properties of cerium-substituted bismuth titanate nanofibers, Journal of Electronic Materials, 41(4), 651-655, 2012.

[14] M. H. Tang, B. Jiang, Y. G. Xiao, Z. Q. Zeng, Z. P. Wang, J. C. Li, and J. He, Top electrode-dependent resistance switching behavior of ZnO thin films deposited on Pt/Ti/SiO₂/Si substrate, Microelectronic Engineering, 93, 35-38, 2012.

[15] X. S. Lv, C. P. Cheng, Y. G. Xiao, M. H. Tang, Z. H. Tang, H. Q. Cai, Y. C. Zhou, and R. W. Li, Magnetoelectric Pb(Zr_0.52Ti_0.48)O₃-La_0.65Sr_0.35MnO₃ composite thin films derived by pulse laser deposition method, Materials Letters, 100, 7-10, 2013.

[16] B. Jiang, M. H. Tang, J. C. Li, Y. G. Xiao, Z. H. Tang, H. Q. Cai, X. S. Lv and Y. C. Zhou, Large memory window and good retention characteristics of ferroelectric-gate field effect transistor with Pt/Bi_3.4Ce_0.6Ti₃O₁₂/CeO₂/Si structure, Journal of Physics D: Applied Physics, 45, 025102, 2012.

[17] L. B. Zhang, M. H. Tang, J. C. Li, Y. G Xiao, Effects of applied bias voltage in tunnel junctions with ferroelectric barrier, Solid State Electronics, 68, 8-12, 2012.

[18] F. Liu, X. P. Ouyang, M. H. Tang, Y. G. Xiao, B. Liu, X. B Zhang, Y. Feng, J. P. Zhang, and J. L. Liu, Scaling-induced enhancement of X-rays luminescence in CsI(Na) crystals, Applied Physics Letters, 102 (18), 181107, 2013.

[19] M. H. Tang, B. Jiang, W. Zhang, Y. G. Xiao, Y. C. Zhou, J. He, and J. Ouyang, Structural and electrical characterizations of Bi(Zn_0.5Ti_0.5)O₃ doped lead zirconate titanate ferroelectric films with enhanced ferroelectric properties, Thin Solid Films, 520 (21), 6684-6689, 2012.

[20] Z. H. Tang, M. H. Tang, X. S. Lv, Y. G. Xiao, H. Q. Cai, C. P. Cheng, L. Q. Li and Y. C. Zhou, Microstructure, magnetoelectric properties and leakage mechanisms of La_0.7Ca_0.3MnO₃/Bi_3.15Nd_0.85Ti₃O₁₂ composite thin films, Solid State Sciences, 17, 35-39, 2013.

[21] Z. H. Tang, M. H. Tang, X. S. Lv, H. Q. Cai, Y. G. Xiao, C. P. Cheng, Y. C. Zhou, and J. He, Enhanced magnetoelectric effect in La_0.67Sr_0.33MnO₃/PbZr_0.52Ti_0.48O₃ multiferroic nanocomposite films with a SrRuO₃ buffer layer, Journal of Applied Physics, 113 (16), 164106, 2013.

[22] D. L. Xu, Y. Xiong, M. H. Tang, B. W. Zeng, and Y. G. Xiao, Bipolar and unipolar resistive switching mode in Pt/Zn_0.99Zr_0.01O/Pt structure for multi-bit resistance random access memory, Applied Physics Letters, 104 (18),183501, 2014.

[23] Z. H. Tang, Y. Xiong, M. H. Tang, Y. G. Xiao, W. Zhang, M. L. Yuan, J. Ouyang, and Y. C. Zhou, Temperature dependence of magnetoelectric effect in Bi_3.15Nd_0.85Ti₃O₁₂-La_0.7Ca_0.3MnO₃ multiferroic composite ?lms buffered by a LaNiO₃ layer, Journal of Materials Chemistry C, 2 (8),1427-1435, 2014.

[24] J. Q. Li, Y. Xiong, M. H. Tang, H. X. Guo, W. Zhao, Y. G. Xiao, Z. H. Tang, S. A. Yan, W. L. Zhang, Y. C. Zhou, F. Yang, and J. He, Simulation of multi-level polarization in ferroelectric tunnel junctions, Physica Status Solidi B, 251 (2), 469-473, 2014.
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