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湖南大学物理与微电子科学学院导师教师师资介绍简介-谢声意

本站小编 Free考研考试/2021-08-18

基本信息
谢声意, 男,湖南大学 物理与微电子科学学院 应用物理系,副教授。研究领域为计算材料学及高压实验凝聚态物理,并承担《大学物理》的课程教学。
教育背景
2004年9月至2008年7月,吉林大学物理学院物理专业,理学学士;
2008年9月至2011年7月,吉林大学物理学院凝聚态物理专业,理学硕士;
2011年9月至2014年12月,吉林大学电子科学与工程学院微电子学与固体电子学,理学博士;
工作履历
2021年1月 至今:湖南大学,物理与微电子科学学院 副教授;
2017年1月2020年12月:湖南大学,物理与微电子科学学院 助理教授;
2015年1月至2016年12月,北京高压科学先进研究中心 博士后。


研究领域
1. 极端高压条件下物质的结构相变及物性变化;
2. 半导体表面界面以及二维半导体的结构与物性计算;


科研项目
国家自然科学基金青年基金 “超高压下过渡金属二氧化物的结构及相变模式研究” 28万,2018-2020,在研,主持。


学术成果
第一作者、共同一作(#)或通讯作者(*) 论文:

16) Sheng-Yi Xie and Xian-Bin Li*, Metallic Graphene Nanoribbons , Nano-Micro Lett. 13, 53 (2021).
15) Li-Min Guanm, Li Zhu*, and Sheng-Yi Xie*, The recurrence of dense face-centered cubic cesium, J. Phys.: Condens. Matter 33, 035404 (2021).
14) Kai Hu, Jichun Lian, Li Zhu, Qin-Jun Chen* and Sheng-Yi Xie*, Prediction of Fe2P-type TiTe2 under pressure, Phys. Rev. B 101, 134109 (2020).

13) Junlin Li and Sheng-Yi Xie*, van der Waals PtO2/MoS2 heterostructure verified from first principles, Phys. Lett. A 384, 126286 (2020).
12) Kai Hu, Qin-Jun Chen* and Sheng-Yi Xie*, Pressure induced superconductive 10-fold coordinated TaS2: a frst-principles study, J. Phys.: Condens. Matter 32, 085402 (2020).
11) Sheng-Yi Xie, Yeliang Wang and Xian-Bin Li*, Flat Boron: A New Cousin of Graphene, Adv. Mater. 31, ** (2019).
10) Sheng-Yi Xie, Jun-Hao Su and Hui Zheng*, Group-IV analogues of MXene: Promising two-dimensional semiconductors, Solid State Commun. 291, 51-53 (2019).
9) Sheng-Yi Xie, Luhong Wang, Fuyang Liu, Xian-Bin Li, Ligang Bai, Vitali B. Prakapenka, Zhonghou Cai, Ho-kwang Mao, Shengbai Zhang, Haozhe Liu*, Correlated High-Pressure Phase Sequence of VO2 under Strong Compression, J. Phys. Chem. Lett., 9, 2388-2393 (2018).
8) Jiaren Du, Moran Wang, Nianke Chen, Sheng-Yi Xie*, Hongmei Yu, Qi Wu*, Instability origin and improvement scheme of facial Alq3 for blue OLED application, Chem. Res. Chin. Univ., 32, 423-427 (2016).
7)Xian-Bin Li,Sheng-Yi Xie*, Hui Zheng, Wei Quan Tian and Hong-Bo Sun*,“Boron based two-dimensional crystals: theoretical design, realization proposal and applications”Nanoscale7, 18863 (2015)
6)Yu Sun,Sheng-Yi Xie* and Xing Meng*, “A First-Principles Study on Hydrogen in ZnS: Structure, Stability and Diffusion”Phys. Lett. A379, 487 (2015)
5)Sheng-Yi Xie, Xian-Bin Li, Wei Quan Tian, Nian-Ke Chen, Dan Wang, Dong Han, Shengbai Zhang and Hong-Bo Sun, “Novel Two-Dimensional MgB6Crystal: Metal-Layer Stabilized Boron Kagome Lattice”Phys. Chem. Chem. Phys.17, 1093 (2015)
4)Sheng-Yi Xie,Xian-Bin Li, Wei Quan Tian, Dan Wang, Nian-Ke Chen, Dong Han, and Hong-Bo Sun, “Slide Fastener Reduction of Graphene-Oxide Edges by Calcium: Insight from ab initio Molecular Dynamics”ChemPhysChem15, 2707 (2014)
3) Sheng-Yi Xie, Xian-Bin Li, Wei Quan Tian, Nian-Ke Chen, Xu-Lin Zhang, Yeliang Wang, Shengbai Zhang and Hong-Bo Sun,“First-principles calculations of a robust two-dimensional boron honeycomb sandwishing a triangular molybdenum layer”Phys. Rev. B90, 035447 (2014)
2)Linfei Li#, Yeliang Wang*#,Sheng-Yi Xie#, Xian-Bin Li, Yu-Qi Wang, Rongting Wu, Hongbo Sun, Shengbai Zhang*, and Hong-Jun Gao*, “Two-Dimensional Transition Metal Honeycomb Realized: Hf on Ir(111)”Nano Lett.13, 4671 (2013)
1) Sheng-Yi Xie, Xian-Bin Li*, Yi-Yang Sun, Yong-Lai Zhang, Dong Han, Wei-Quan Tian, Wen-Quan Wang, Yi-Song Zheng, Sheng-Bai Zhang*, Hong-Bo Sun*, “Theoretical characterization of reduction dynamics for graphene oxide by alkaline-earth metals”Carbon52, 122 (2013)
合作论文(PR系列):
3) Dan Wang, Dong Han, Xian-Bin Li*, Sheng-Yi Xie, Nian-Ke Chen, Wei Quan Tian, D. West, Hong-Bo Sun*, Sheng-Bai Zhang*, “Determination of formation and ionization energies of charged defects in two-dimensional materials”, Phys. Rev. Lett., 114, 196801 (2015).
2) Hui Zheng, Xian-Bin Li*, Nian-Ke Chen, Sheng-Yi Xie, Wei Qaun Tian, Yuanpin Chen, Hong Xia, Sheng-Bai Zhang*, Hong-Bo Sun*, “Monolayer II-VI semiconductors: A first-principles prediction”, Phys. Rev. B, 92, 115307 (2015).
1)Dong Han, D. West, Xian-Bin Li, Sheng-Yi Xie, Hong-Bo Sun, Shengbai Zhang, Impurity doping in SiO2: Formation energies and defect levels from first-principles calculations, Phys. Rev. B, 82, 155132 (2010).





奖励与荣誉
2013年,与物理所合作的铪烯研究工作被 Nature Nanotechnology杂志及Nature China网站亮点报导 ;

2017年,第九届全球华人物理学大会(OCPA9)作邀请报告;
2018年,国际晶体学会高压分会(IUCr HP 2018)作邀请报告

2018年,吉林省自然科学学术成果奖 三等奖(第四完成人);





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