Analytical model for capacitance-voltage characteristics of ion-implanted 4H silicon carbide Schottky barrier diodes

WANG Shou-guo^1,2, ZHANG Yan¹

1.Dept.of Electronic and Information Engineering,Harbin Institute of Technology(Shenzhen Graduate School),Shenzhen 518055,China;2.School of Information Science and Technology,Northwest University,Xi’an 710127,China



Abstract:

In order to undertake theory analysis in the application area of switching,frequency and power devices,an analytical model for capacitance-voltage (C-V) characteristics of ion-implanted 4H silicon carbide (SiC) Schottky barrier diodes (SBDs) was investigated.This model was established by considering the effects of incomplete ionization of nitrogen in 4H-SiC,the Poole-Frenkel on the ionization energy,and the ion-implanted nitrogen donor profiles.The simulation process is discussed in detail for two multiple nitrogen ion-implanted 4H-SiC SBDs (three and four fold ion-implantations) designed and fabricated in the experiments using this model at different activation rates.An agreement between the modeled C-V curves and the measured results for two ion-implanted 4H-SiC SBDs fabricated is shown.This capacitance model has the potential to be used to simulate and design ion-implanted SiC devices concerned in the future.

Key words:  silicon carbide  capacitance  Schottky barrier diodes  ion implantation

DOI：10.11916/j.issn.1005-9113.2011.06.009

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