个人简介

闫小兵，男，副教授，博士。2011年毕业于南京大学，材料物理与化学专业，获得工学博士学位。主要工作经历有：2011年至今在河北大学电子信息工程学院工作。现为微电子与固体电子学专业硕士研究生指导教师和集成电路与工艺工程硕士研究生指导教师。

研究方向

一直从事阻变、铁性薄膜和器件以及电荷俘获存储器等领域研究工作。

科研项目

1. 河北省自然基金项目：含铜或银电极铁酸铋薄膜阻变存储特性研究(2011-2013)，主持人

2. 河北省教育厅重点项目：基于钛酸锶钡薄膜中氧空位分布与浓度调控的阻变存储特性研究(2011-2013)，主持人

3. 国家自然基金项目：用于电子突触的"模拟"型忆阻器制备方法及特性机理研究 (2013-2015)，(2011-2013)，

4. 代表论文

1. X. B. Yan, Y. D. Xia, H. N. Xu X. Gao H. T. Li，R. Li, J. Yin, and Z. G. Liu. Effects of the electroforming polarity on bipolar resistive switching characteristics of SrTiO_3?δ films. Applied. Physics. Letters, 97 112101-3 (2010）.

2. X. B. Yan, J. Yin, H. X. Guo，Y. Su, B. Xu, H.T. Li, D. W. Yan, D. W. Yan, Z. G. Liu. Bipolar resistive switching performance of the nonvolatile memory cells based on (AgI)_0.2(Ag₂MoO₄ )_0.8 solid electrolyte films, Journal of Applied Physics,106, 054501-5 (2009).

3. X. B. Yan, K. Li, J. Yin, Y. D. Xia, H. X. Guo, L. Chen and Z. G. Liu, The Resistive Switching Mechanism of Ag/SrTiO₃/Pt Memory Cells，Electrochemical and Solid-State Letters, 13, H87-H89 (2010).

This paper has been selected for the January 7 2010 issue 3 volume 21 of Virtual Journal of Nanoscale Science & Technology.

4. X. B. Yan, Z.G. Liu, J. Yin，X. Y. Xia, Studies on the reset power needed for the unipolar resistive switching in amorphous SrTiO_3?δ films induced by electrical pulse, Phys. Letters A, 375, 3599-3603(2011).

5. B. T. Liu(导师), X. B. Yan, X Zhang, C. S. Cheng, F. Li, F. Bian, Q. X. Zhao, Q. L. Guo, and Y. L. Wang, X. H. Li and X. Y. Zhang, C. R. Li, Y. S. Wang. Barrier performance of ultrathin Ni–Ti film for integrating ferroelectric capacitors on Si. Applied. Physics. Letters, 91 142908-3 (2007).

6. B. T. Liu(导师), X. B. Yan, Y. N. Guo, C. S. Cheng, F.Li, X. Zhang, F. Bian, and X. Y. Zhang，“Influence of crystallinity on the oxidation resistance of Ni-Al film used as diffusion barrier layer”，J. Phys. D: Appl. Phys. **-5 (2009).

7. B. T. Liu(导师), X. B. Yan, X. Zhang, Y, Zhou, F. Bian and X. Y. Zhang，“Investigation of oxidation resistance of Ni-Ti film used as oxygen diffusion barrier layer”, Applied Surface Science 255 6179–6182 (2009) .

8. Y. N. Guo, B. T. Liu, J. W. Zhao, Y. Zhou, X. B. Yan, and X. Y. Zhang, “Barrier Performance of Various Thick Polycrystalline Ni–Al Films for Integrating PbZr_0.4Ti_0.6O₃ Capacitors on Si”, Journal of The Electrochemical Society, 157 (6) G127-G129 (2010).

9. B. T. Liu, F. Li, C. S. Cheng, D. Q. Wu, X. B. Yan, F. Bian, Z. Yan, Q. X. Zhao, X. Y. Zhang, “Investigation of PbZr_0.4Ti_0.6O₃ capacitors with room temperature as-grown LaNiO3 electrodes”, J. Mater. Sci. 42, 6955-6960 (2007).