高冰
GAO BING


职称/学术兼职

教授、博导


职位



联系方式

bgao78@163.com


主要研究方向

多尺度建模与仿真
流体动力学与传热传质
光伏用单晶硅和多晶硅晶体生长
大尺寸电子级单晶硅晶体生长及装备设计与制造
大尺寸第三代半导体SiC与GaN晶体生长及装备设计与制造
大尺寸半导体金刚石晶体生长


教育工作经历

教育经历：
1996.09-2000.07 江苏大学 机械设计与制造 本科
2000.09-2004.03 中国科学院力学研究所 流体力学 硕士
2004.04-2008.08 韩国科学技术院 航空工程 博士
工作经历：
2008.12-2010.11 日本 九州大学 应用力学研究所 学术研究员
2010.12-2016.04 日本 九州大学 应用力学研究所 副教授（特聘）
2016.05-2017.01 挪威科技工业研究院 终身研究科学家
2017.07-目前 武汉大学工业科学研究院 教授


论文发表和专利



论文 2019
Liu B, Yu Y, Tang X, Gao B^*. Influence of silicon melt convection on interface instability in large-size silicon carbide solution growth[J]. Journal of Crystal Growth, 2019, 527: 125248.


Liu B, Tang X, Yu Y, Gao B^*. Numerical Investigation of Thermal Buoyancy, the Electromagnetic Force and Forced Convection in Conventional RF Systems for 4-Inch Sic by TSSG[J]. Crystals, 2019, 9(10): 516.


Liu B, Yu Y, Tang X, Gao B^*. Optimization of crucible and heating model for large-sized silicon carbide ingot growth in top-seeded solution growth[J]. Journal of Crystal Growth,accept


Liu B, Yu Y, Tang X, Gao B^*. Improvement of growth interface stability for 4-inch silicon carbide crystal growth using TSSG[J]. Crystals, doi: 10.3390/cryst**.
书
Bing Gao, Koichi Kakimoto, “Carbon Impurity in Crystalline Silicon
2017
1. B. Gao*, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto, Three-dimensional analysis of dislocation multiplication during thermal process of grown silicon with different orientations, Journal of Crystal Growth, 474 (15) 121-129, 2017.
2. Koichi Kakimoto, Bing Gao, Satoshi Nakano, Hirofumi Harada, and Yoshiji Miyamura, “Silicon bulk growth for solar cells: Science and technology”, Japanese Journal of Applied Physics 56 (2), 020101.
3. S. Nakano, B. Gao, K. Kakimoto, Numerical analysis of dislocation density and residual stress in a GaN single crystal during the cooling process”, Journal of Crystal Growth 468 (2017) 839–844.
4. S. Nakano, B. Gao, K. Jiptner, H. Harada, Y. Miyamura, T. Sekiguchi, M. Fukuzawa, K. Kakimoto, Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells, Journal of Crystal Growth 474 (2017) 130–134.
5. Xin Liu, Bing Gao, Satoshi Nakano, Koichi Kakimoto, Reduction of carbon contamination during the melting process of Czochralski silicon crystal growth, Journal of Crystal Growth 474, 3–7, 2017.


2016
6. B. Gao*, J. Mari, M. Mohammed, Influence of grown-in defects on final oxygen precipitates during heat treatment of Cz-Si wafer analyzed by a coupled model with the interaction of point defects, oxygen precipitates, and dislocation loops, Journal of Crystal Growth, 453, 173–179, 2016.
7. K. Kakimoto, B. Gao, X. Liu, S. Nakano, Growth of semiconductor silicon crystals, Progress in crystal growth and characterization of materials, 62, 273-285, 2016.
8. K. Jiptner, Y. Miyamura, B. Gao, H. Harada, K. Kakimoto Koichi, T. Sekiguchi, Orientation dependency of dislocation generation in Si growth process，Solid State Phenomena, 242, 15-20, 2016.
9. T. Sekiguchi, Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. Prakash, S. Nakano, B. Gao, K. Kakimoto, 50 cm size Seed Cast Si ingot growth and its characterization，Solid State Phenomena, 242, 30-34, 2016.
10. S. Araki, B. Gao, S. Nishizawa, S. Nakano, K. Kakimoto, Total pressure-controlled PVT SiC growth for polytype stability during using 2D nucleation theory, Crystal Research and Technology, 51, 344-348, 2016.
11. S. Nakano, B. Gao, K. Jiptner, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Numerical analysis of the relation between dislocation density and residual strain in silicon ingots used in solar cells, Journal of Crystal Growth, in press, 2016.


2015
12. B. Gao*, K. Kakimoto, Modeling grown-in dislocation multiplication on prismatic slip planes for GaN single crystals, Journal of Applied Physics, 117 (3), 035701, 2015.
13. B. Gao*, K. Jiptner, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Applicability of the three-dimensional Alexander-Haasen model for the analysis of dislocation distributions in single-crystal silicon, Journal of Crystal Growth, 411, 49-55, 2015.
14. B. Gao*, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells, Engineering, 1(3), 2015.
15. Y. Miyamura, H. Harada, K. Jiptner, S. Nakano, B. Gao, K. Kakimoto, K. Nakamura, Y. Ohshita, A. Ogura, S. Sugawara, T. Sekiguchi, Advantage in solar cell efficiency of high-quality seed cast mono Si ingot, Applied Physics Express, 8, 062301, 2015.
16. T. Sekiguchi, K. Jiptner, R. R. Prakash, J. Chen, Y. Miyamura, H. Harada, S. Nakano, B. Gao, K. Kakimoto, Control of extended defects in cast and seed cast Si ingots for photovoltaic application, Phys. Status Solidi C, 1–5, 2015
17. X. Liu, B. Gao, K. Kakimoto, Numerical investigation of carbon contamination during the melting process of Czochralski silicon crystal growth, Journal of Crystal Growth, 417, 58–64, 2015.
18. X. Liu, B. Gao, S. Nakano, K. Kakimoto, Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth, Cryst. Res. Technol., 1–6, 2015.
19. K. Jiptner, Y. Miyamura, H. Harada, B. Gao, K. Kakimoto, T. Sekiguchi, Dislocation behavior in seed-cast grown Si ingots based on crystallographic orientation, Progress in Photovoltaics: Research and Applications, 2015, DOI: 10.1002/pip.2708.


2014
20. B. Gao*, S. Nakano, N. Miyazaki, K. Kakimoto, Alexander–Haasen model of basal plane dislocations in single-crystal sapphire, Crystal Growth & Design, 14 (8), 4080–4086, 2014.
21. B. Gao*, K. Kakimoto, Three-dimensional modeling of basal plane dislocations in 4H-SiC single crystal grown by the physical vapor transport method, Crystal Growth & Design, 14(3), 1272-1278, 2014.
22. B. Gao*, K. Kakimoto, Three-dimensional analysis of dislocation multiplication in single-crystal silicon under accurate control of cooling history of temperature, Journal of Crystal Growth, 396, 7-13, 2014.
23. B. Gao*, K. Kakimoto, Optimization of power control in the reduction of basal plane dislocations during PVT growth of 4H-SiC single crystals, Journal of Crystal Growth, 392, 92-97, 2014.
24. B. Gao*, K. Kakimoto, Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model, Journal of Crystal Growth, 386, 215-219, 2014.
25. K. Jiptner, Bing Gao, H. Harada, Y. Miyamura, M. Fukuzawa, K. Kakimoto, T. Sekiguchi, Thermal stress induced dislocation distribution in directional solidification of Si for PV application, Journal of Crystal Growth, 408, 19-24, 2014.
26. T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, K. Kakimoto, Study of the effect of doped impurities on polytype stability during PVT growth of SiC using 2D nucleation theory, Journal of Crystal Growth, 385, 95-99, 2014.
27. Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi, Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization, Journal of Crystal Growth, 401,133-136, 2014


2013
28. B. Gao*, K. Kakimoto, Relationship between the locations of activated dislocations and the cooling flux direction in monocrystalline-like silicon grown in [001] and [111] directions, Journal of Applied Crystallography, 46, 1771-1780, 2013.
29. B. Gao*, S. Nakano, H. Harada, Y. Miyamura, K. Kakimoto，Effect of cooling rate on the activation of slip systems in seed cast-grown monocrystalline silicon in the [001] and [111] directions, Crystal Growth & Design, 13, 2661–2669, 2013.
30. B. Gao*, K. Kakimoto, Numerical investigation of the influence of cooling flux on the generation of dislocations in cylindrical mono-like silicon growth, Journal of Crystal Growth, 384, 13–20, 2013.
31. B. Gao*, S. Nakano, K. Kakimoto, Reduction of Oxygen Impurity in Multicrystalline Silicon Production, International Journal of Photoenergy, 908786 (1-6), 2013.
32. B. Gao*, S. Nakano, K. Kakimoto, Highly efficient and stable implementation of the Alexander-Haasen model for numerical analysis of dislocation in crystal growth, Journal of Crystal Growth, 369,32–37, 2013.
33. B. Gao*, K. Kakimoto, Effect of the inclusion of transparency on the thermal field and interface shape in long-term sublimation growth of SiC crystals, Journal of the Japanese Association for Crystal Growth, 40(1), 2013.
34. S. Nakano, B. Gao, K. Kakimoto, Relationship between oxygen impurity distribution in multicrystalline solar cell silicon and the use of top and side heaters during manufacture, Journal of Crystal Growth, 375, 62-66, 2013.
35. M. Inoue, S. Nakano, H. Harada, Y. Miyamura, B. Gao, Y. Kangawa, K. Kakimoto, Numerical Analysis of the Dislocation Density in Multicrystalline Silicon for Solar Cells by the Vertical Bridgman Process, International Journal of Photoenergy, 2013,706923, 2013.
36. Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R. R. Prakash, J.Y. Li, T. Sekiguchi, T. Kojima, Y. Ohshita, A. Ogura, M. Fukuzawa, S. Nakano, B. Gao, K. Kakimoto, 10 cm diameter mono cast Si growth and its characterization, Solid State Phenomena, 205-206, 89-93, 2013.


2012
37. B. Gao*, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Dislocation Analysis of a New Method for Growing Large-size Crystals of Monocrystalline Silicon Using a Seed Casting Technique, Crystal Growth & Design, 12 (12), 6144–6150, 2012.
38. B. Gao*, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Anisotropic thermal stress simulation with complex crystal-melt interface evolution for seeded growth of monocrystalline silicon, Crystal Growth & Design, 12 (11), 5708–5714, 2012.
39. B. Gao*, S. Nakano, K. Kakimoto, Influence of back-diffusion of iron impurity on lifetime distribution near the seed-crystal interface in seed cast-grown monocrystalline silicon by numerical modeling, Crystal Growth & Design, 12(1), 522?525, 2012.
40. B. Gao*, S. Nakano, K. Kakimoto, The impact of pressure and temperature on growth rate and layer uniformity in the sublimation growth of AlN crystals, Journal of Crystal Growth, 338(1), 69-74, 2012.
41. B. Gao*, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace, Journal of Crystal Growth, 352(1),47-52, 2012.
42. K. Kakimoto, B. Gao, S. Nakano, Y. Kangawa, H. Harada, Toward realization of silicon solar cells with high efficiency, Journal of the Japanese Association for Crystal Growth, 39(3), 135-141, 2012.
43. T. Shiramomo, B. Gao, F. Mercier, S. Nishizawa, S. Nakano, Y. Kangawa, K. Kakimoto, Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory, Journal of Crystal Growth, 352(1), 177-180, 2012.
44. F. Inui, B. Gao, S. Nakano, K. Kakimoto, Numerical analysis of the velocity of SiC growth by the top seeding method, Journal of Crystal Growth, 348(1),71-74, 2012.
45. K. Kakimoto, B. Gao, T. Shiramomo, S. Nakano, S. Nishizawa, Analysis of growth velocity of SiC growth and by the Physical vapor transport method, Materials Science Forum, 717 – 720,25-28, 2012.


2011
46. B. Gao*, S. Nakano, K. Kakimoto, Effect of crucible cover material on impurities of multicrystalline silicon in a unidirectional solidification furnace, Journal of Crystal Growth, 318 (1), 255-258, 2011.
47. B. Gao*, S. Nakano, K. Kakimoto, Influence of reaction between silica crucible and graphite susceptor on impurities of multicrystalline silicon in a unidirectional solidification furnace, Journal of Crystal Growth, 314(1), 239-245, 2011.
48. B. Gao*, S. Nakano, K. Kakimoto, Reducing impurities of multicrystalline silicon in a unidirectional solidification furnace for solar cells, Journal of The Minerals, Metals & Materials Society (JOM), 63(10), 43-46, 2011.
49. B. Gao, D.H. Park and S.O. Park, Stability analysis of boundary layer over a hump using PSE, Fluid Dynamics Research, 43(5), 2011.
50. K. Kakimoto, B. Gao, S. Nakano, Y. Kangawa, Relationship between heat and mass transfer and growth velocity during growth of bulk crystals. Journal of the Japanese Association for Crystal Growth, 38(2), 2011.
51. K. Kakimoto, B. Gao, T. Shiramomo, S. Nakano, Shi-ichi Nishizawa, Thermodynamic analysis of SiC polytype growth by physical vapor transport method, Journal of Crystal Growth, 324 (1), 78-81, 2011.
52. S. Nakano, X.J. Chen, B. Gao, K. Kakimoto, Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells, Journal of Crystal Growth, 2010, 318(1), 280-282, 2011.
53. K. Kakimoto, B. Gao, S. Nakano, Numerical analysis of light elements transport in a unidirectional solidification furnace, Phys. Status Solidi C 8 (3), 659–661, 2011.


2010
54. B. Gao*, S. Nakano, K. Kakimoto, Global simulation of coupled carbon and oxygen transport in a unidirectional solidification furnace for solar cells, Journal of The Electrochemical Society, 157(2), H153-H159, 2010.
55. B. Gao*, X.J. Chen, S. Nakano, K. Kakimoto, Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells, Journal of Crystal Growth, 312(9), 1572–1576, 2010.
56. B. Gao*, K. Kakimoto, Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth, Journal of Crystal Growth, 312(20), 2972-2976, 2010.
57. B. Gao*, X.J. Chen, S. Nakano, S. Nishizawa, K. Kakimoto, Analysis of SiC crystal sublimation growth by fully coupled compressible multi-phase flow simulation, Journal of Crystal Growth, 312(22), 3349-3355, 2010.
58. B. Gao*, S. Nakano, K. Kakimoto, Numerical analysis of Oxygen and carbon transport in a unidirectional solidification furnace, ECS Transactions, 27(1), 1015-1020, 2010.


2009-
59. B. Gao*, S. Nakano, K. Kakimoto, Numerical analysis of impurity transport in a unidirectional solidification furnace for multicrystalline silicon, Journal of the Japanese Association for Crystal Growth, 36(4), 2009.
60. K. Kakimoto, H. Matsuo, S. Hisamatsu, B. Ganesh, B. Gao, X. J. Chen, L. J. Liu, H. Miyazawa, Y. Kangawa, Numerical Analysis of mc-Si Crystal Growth, Solid State Phenomena, Vols. 156-158, 193-198, 2009.
61. B. Gao, S.O. Park, Compressible parabolized stability equation in curvilinear coordinate system and integration, KSAS International Journal, 7(2), 155-174, 2006.
62. B. Gao*, J. Hang, Z. B. Lin, D. H. Guo, J. M. Lin, The experiment exploration of catalyst effects on aerodynamic heat in real gas effects, Experiments and Measurements in Fluid Mechanics, 18(2), 30-33, 2004. (in Chinese)
63. D.H. Guo, B. Gao, Z.B. Lin, The exploration of a new kind of free-released balance in impulsive wind tunnels, Experiments and Measurements in Fluid Mechanics, 17(1),40-43, 2003. (in Chinese)


Book chapters
1. Bing Gao, Koichi Kakimoto, “Numerical analysis of impurities and dislocations during silicon crystal growth for solar cells” in Defects and Impurities in Silicon Materials, Chapter 9, Editor: Hisako Niko, Springer, January, 2015.
2. Koichi Kakimoto, Bing Gao, “Fluid dynamics - modelling and analysis” in Handbook of Crystal Growth, 2nd Edition, Bulk Crystal Growth, Chapter 3, volume 2B, Editor: Peter Rudolph, Elsevier, 17 Dec, 2014.
3. Koichi Kakimoto, Bing Gao, “Modern Aspects of Czochralski and Multicrystalline Silicon Crystal Growth” in Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals, Chapter 1, Editors: Gudrun Kissinger and Sergio Pizzini, CRC Press, Taylor & Francis, December 9, 2014.


所获荣誉

Ulrich Goesele Young Scientist Award, Germany, 2015
Top 25 Hottest Articles, Journal of Crystal Growth, ScienceDirect, April-June, 2014
Top 25 Hottest Articles, Journal of Crystal Growth, ScienceDirect, October-December, 2014
Young Researcher Awards, Japanese Association for Crystal Growth, Japan, 2010
Top 25 Hottest Articles, Journal of Crystal Growth, ScienceDirect, April-June, 2010
Top 25 Hottest Articles, Journal of Crystal Growth, ScienceDirect, October-December, 2010
Scholarship, Korea Science and Engineering Foundation (KOSEF), South Korea, 2004-2007