简 历
武汉大学 教授、博士生导师
Email: zhousj@whu.edu.cn
研究方向
深紫外/绿光/蓝光LED芯片；第三代半导体材料（GaN、AlN、SiC）与器件；集成电路与光电子芯片；激光制造与高端半导体装备制造；光机电一体化与精密测试技术；微纳米机器人
教育及学术背景
2014.07-2015.07 美国密歇根大学 电子工程与计算机系,Research Fellow
2011.12-2014.03 上海交通大学 机械工程博士后流动站点 博士后
2008.09-2011.12 上海交通大学 微电子学与固体电子学 博士
2005.09-2008.07 武汉理工大学 机械电子工程 硕士
2001.09-2005.07 武汉理工大学 电子科学与技术 学士
工业界经历
1．广东量晶光电科技有限公司
担任研发主管，负责广东量晶光电科技有限公司的大功率LED芯片及高压LED芯片的研发和产业化工作，主导研发的大功率LED芯片的发光效率达到193lm/W@350 mA，该技术指标达到国际领先水平。
2．佛山国星光电股份有限公司
担任项目主管，研制全自动SMD LED在线测试分选设备，负责研发的LED在线测试分选设备已经大规模应用于LED封装企业的产品生产线。
学术荣誉与奖项
2021 英国物理学会Outstanding Reviewer Award
2021 中国产学研合作创新奖
2020 国家“****”青年拔尖人才
2020 英国物理学会TOP CITED PAPER AWARD
2018 湖北省****
2017 湖北省楚天****
2016 ICEPT 2016国际学术会议组织委员会共同主席
2015 武汉大学珞珈青年****
2012 上海交通大学优秀博士后
2011 上海交通大学优秀博士学位论文
2010 第六十届ECTC国际会议杰出贡献奖
2010 台湾光华基金会奖学金
2009 湖北省优秀硕士学位论文
学术论文
77. Bin Tang, Zehong Wan, Hongpo Hu, Liyan Gong, and Shengjun Zhou*, Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice, Applied Physics Letters 118(26), 262101 (2021).
76. Xiaoyu Zhao, Bin Tang, Liyan Gong, Junchun Bai, Jiafeng Ping, and Shengjun Zhou*, Rational construction of staggered InGaN quantum wells for efficient yellow light-emitting diodes, Applied Physics Letters 118, 182102 (2021).
75. Qiang Zhao, Hui Wan, Bin Tang, Shiyi Luan, Pan Liu, Yu Lei, Shengtao Yu, Dong Chen, Fang Dong, Chengqun Gui*, and Shengjun Zhou*, Effect of Femtosecond Laser Irradiation on Yield Strength of Nanoporous Silver Materials, Materials Letters 294, 129800 (2021).
74. 赵强, 万辉, 于圣韬, 栾世奕, 桂成群*, 周圣军*, 飞秒激光制备柔性纳米多孔Ag材料的研究, 中国激光 48(8), ** (2021).
73. Hui Wan, Shengtao Yu, Yu Lei, Qiang Zhao, Guoyi Tao, Shiyi Luan, Chengqun Gui*, and Shengjun Zhou*, Understanding the Plasmon-enhanced Photothermal Effect of Polarized Laser on Metal Nanowires, Applied Optics 60(10), 2783-2787 (2021).
72. 万辉, 赵强, 于圣韬, 栾世奕, 桂成群, 周圣军*, 一维纳米材料位姿调控与激光连接技术进展, 中国激光 48(8), ** (2021).
71. 万泽洪, 崔恩康, 于圣韬, 雷宇, 桂成群, 周圣军*, RIE工艺参数对4H-SiC刻蚀速率和表面粗糙度的影响, 激光与光电子学进展,(2021).
70. Shiyi Luan, Qiang Zhao, Chengqun Gui*, and Shengjun Zhou*, Welding deformations of welded joints between 1D Ag nanowire connectors and 3D substrates: a molecular dynamics study, Japanese Journal of Applied Physics 60, 015004 (2021).
69. Shiyi Luan, Shengtao Yu, Chengqun Gui*, and Shengjun Zhou*, Atomic-scale structural evolution and welding deformations of laser welded joints in Ag nanowire connectors on homogeneous substrates, Japanese Journal of Applied Physics 59, 115005 (2020).
68. Shiyi Luan, Bin Tang, Qiang Zhao, Hui Wan, Shengtao Yu, Chengqun Gui*, Shengjun Zhou*, Length effects on tensile behavior of Au-Ag heterostructured nanowires with the load on different ends: A molecular dynamics study, Physics Letters A 384, 126929 (2020).
67. Shuyu Lan, Bin Tang, Hongpo Hu, and Shengjun Zhou*, Strategically constructed patterned sapphire with silica array to boost substrate performance in GaN-based flip-chip visible light-emitting diodes, Optics Express 28(25), 38444-38455 (2020).
66. Yu Lei, Hui Wan, Bin Tang, Shuyu Lan, Jiahao Miao, Zehong Wan, Yingce Liu, and Shengjun Zhou*, Optical Characterization of GaN-Based Vertical Blue Light-Emitting Diodes on P-Type Silicon Substrate, Crystals 10(7), 621 (2020).
65. Bin Tang, Hongpo Hu, Hui Wan, Jie Zhao, Liyan Gong, Yu Lei, Qiang Zhao, Shengjun Zhou*, Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification, Applied Surface Science 518, 146218 (2020).
64. Hui Wan, Chengqun Gui, Dong Chen, Jiaohao Miao, Qiang Zhao, Shiyi Luan, and Shengjun Zhou*, Scattering force and heating effect in laser-induced plasmonic welding of silver nanowire junctions, Applied Optics 59 (7), 2186-2191 (2020).
63. Hui Wan, Shengjun Zhou*, Shuyu Lan and Chengqun Gui, Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes, ECS Journal of Solid State Science and Technology 9, 046002 (2020).
62. Jie Zhao, Hongpo Hu, Yu Lei, Hui Wan, Liyan Gong, and Shengjun Zhou*, Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes, Nanomaterials, 2019, 9, 1634,.
61. Hongpo Hu, Bin Tang, Hui Wan, Haiding Sun, Shengjun Zhou*, Jiangnan Dai, Changqing Chen, Sheng Liu, and L. Jay Guo, Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array, Nano Energy, 2020, 69, 104427.
60. Shuyu Lan, Hui Wan, Jie Zhao, and Shengjun Zhou*, Light Extraction Analysis of AlGaInP Based Red and GaN Based Blue/Green Flip-Chip Micro-LEDs Using the Monte Carlo Ray Tracing Method, Micromachines, 2019, 10, 860.
59. Jiahao Miao, Xinghuo Ding, Shengjun Zhou*, and Chengqun Gui, Fabrication of Dynamic Holograms on Polymer Surface by Direct Laser Writing for High-Security Anti-Counterfeit Applications, IEEE Access, 7, 142926-142933 (2019).
58. Shengjun Zhou*, Haohao Xu, Bin Tang, Yingce Liu, Hui Wan, and Jiahao Miao, High-power and reliable vertical light-emitting diodes on 4-inch silicon substrate, Optics Express 27(20), A1506-A1516 (2019).
57. Qiang Zhao, Jiahao Miao, Shengjun Zhou*, Chengqun Gui, Bin Tang, Mengling Liu, Hui Wan and Jinfeng Hu, High-Power GaN-Based Vertical Light-Emitting Diodes on 4-Inch Silicon Substrate, Nanomaterials 9(8), 1178 (2019).
56. Bin Tang, Jiahao Miao, Yingce Liu, Shengjun Zhou*, Haohao Xu and Hui Wan, Insights Into the Influence of Sidewall Morphology on the Light Extraction Efficiency of Mini-LEDs, IEEE Photonics Journal, 11(4), 1-7 (2019).
55. Jie Zhao, Xingtong Liu, Haohao Xu, Jiahao Miao, Jinfeng Hu and Shengjun Zhou*, High-Performance Green Flip-Chip LEDs with Double-Layer Electrode and Hybrid Reflector, ECS Journal of Solid State Science and Technology, 8(8), Q153-Q157 (2019).
54. Shengjun Zhou, Xingtong Liu, Han Yan, Zhiwen Chen, Yingce Liu, and Sheng Liu*, Highly efficient GaN-based high-power flip-chip light-emitting diodes, Optics Express 27(12), 669 (2019).
53. Hongpo Hu, Shengjun Zhou*, Hui Wan, Xingtong Liu, Ning Li and Haohao Xu, Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer, Scientific Reports 9, 3447 (2019).
52. Hui Wan, Bin Tang, Ning Li, Shengjun Zhou*, Chengqun Gui and Sheng Liu, Revealing the Role of Sidewall Orientation in Wet Chemical Etching of GaN-Based Ultraviolet Light-Emitting Diodes, Nanomaterials 9(3), 365 (2019).
51. Jie Zhao, Xinghuo Ding, Jiahao Miao, Jinfeng Hu, Hui Wan and Shengjun Zhou*, Improvement in Light Output of Ultraviolet Light-Emitting Diodes with Patterned Double-Layer ITO by Laser Direct Writing, Nanomaterials 9(2), 203 (2019).
50. Bin Tang, Jia Miao, Yingce Liu, Hui Wan, Ning Li, Shengjun Zhou* and Chengqun Gui, Enhanced Light Extraction of Flip-Chip Mini-LEDs with Prism-Structured Sidewall, Nanomaterials 9(3), 319 (2019).
49. Shengjun Zhou*, Haohao Xu, Hongpo Hu*, Chengqun Gui and ShengLiu*, High quality GaN buffer layer by isoelectronic doping and its application to 365?nm InGaN/AlGaN ultraviolet light-emitting diodes, Applied Surface Science 471(31), 231-238 (2019).
48. Shengjun Zhou*, Haohao Xu, Mengling Liu, Xingtong Liu, Jie Zhao, Ning Li and Sheng Liu*, Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes, Micromachines, 9(12), 650 (2018).
47. Shengjun Zhou*, Mengling Liu, Haohao Xu, Yingce Liu, Yilin Gao, Xinghuo Ding, Shuyu Lan, Yuchen Fan, Chengqun Gui, and Sheng Liu*, High-efficiency GaN-based LED with patterned SiO₂ current blocking layer deposited on patterned ITO, Optics and Laser Technology109, 627 (2019).
46. Shengjun Zhou*, Xingtong Liu, Han Yan, Yilin Gao, Haohao Xu, Jie Zhao, Zhijue Quan, Chengqun Gui, and Sheng Liu, The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes, Scientific Reports 8, 11053 (2018).
45. Mengling Liu, Jie Zhao , Shengjun Zhou*, Yilin Gao, Jinfeng Hu , Xingtong Liu, and Xinghuo Ding, An InGaN/GaN Superlattice to Enhance the Performance of Green LEDs: Exploring the Role of V-Pits, Nanomaterials 8, 450(2018).
44. Xingtong Liu, Ning Li, Jinfeng Hu, Yinlin Gao, Ruiqing Wang, and Shengjun Zhou*, Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes, ECS Journal of Solid State Science and Technology 7, Q116-Q122(2018).
43. Shengjun Zhou*, Jiajiang Lv, Yini Wu, Yuan Zhang, Chenju Zheng, and Sheng Liu*, Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes, Japanese Journal of Applied Physics 57, 051003 (2018).
42. Shengjun Zhou*, Yilin Gao, Chenju Zheng, Yingce Liu, Hongpo Hu, Jiajiang Lv, and Xingtong Liu, A comparative study of GaN-based direct current and alternating current high voltage light-emitting diodes, Physica Status Solidi A 215, ** (2018).
41. Chengqun Gui, Xinghuo Ding, Shengjun Zhou*, Yilin Gao, Xingtong Liu, Sheng Liu, Nanoscale Ni/Au wire grids as transparent conductive electrodes in ultraviolet light-emitting diodes by laser direct writing, Optics & Laser Technology 104, 112 (2018).
40. Mengling Liu, Shengjun Zhou*, Xingtong Liu, Yilin Gao, and Xinghuo Ding, Comparative experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet flip-chip and top-emitting LEDs, Japanese Journal of Applied Physics 57, 031001 (2018).
39. Shengjun Zhou, Xingtong Liu, Yilin Gao, Yingce Liu, Zongyuan Liu, Chengqun Gui, and Sheng Liu*, Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts, Optics Express 25, 26615 (2017).
38. Xingtong Liu, Shengjun Zhou^*, Yilin Gao, Hongpo Hu, Yingce Liu, Chengqun Gui and Sheng Liu, Numerical simulation and experimental investigation of GaN-based flip-chip LEDs and top-emitting LEDs , Applied Optics 56, 9502 (2017).
37. Hongpo Hu, Shengjun Zhou*, Xingtong Liu, Yilin Gao, Chengqun Gui, Sheng Liu, Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes, Scientific Reports 7, 44627 (2017).
36. Shengjun Zhou*, Hongpo Hu, Xingtong Liu, Mengling Liu, Xinghuo Ding, Chengqun Gui, Sheng Liu, and L. Jay Guo, Comparative study of GaN-based ultraviolet LEDs grown on different-sized patterned sapphire substrates with sputtered AlN nucleation layer, Japanese Journal of Applied Physics 56, 111001 (2017).
35. Shengjun Zhou*, Mengling Liu, Hongpo Hu, Yilin Gao, Xingtong Liu, Effect of ring-shaped SiO₂ current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes, Optics & Laser Technology 97, 137 (2017).
34. Mengling Liu, Yilin Gao, Hongpo Hu, Xingtong Liu, Jiajiang Lv, Chenju Zheng, Xinghuo Ding, and Shengjun Zhou*, Effect of interdigitated SiO₂ current blocking layer on external quantum efficiency of high power LEDs, Chinese Journal of Luminescence 38, 786 (2017).
33. Sheng Liu, Chenju Zheng, Jiajiang Lv, Mengling Liu, Shengjun Zhou*, Effect of high-temperature/current stress on the forward tunneling current of InGaN/GaN high-power blue light-emitting diodes, Japanese Journal of Applied Physics 56, 081001 (2017).
32. Xinghuo Ding, Chengqun Gui, Hongpo Hu, Mengling Liu, Xingtong Liu, Jiajiang Lv, Shengjun Zhou*, Reflectance bandwidth and efficiency improvement of light-emitting diodes with double distributed bragg reflector, Applied Optics 56, 4375 (2017).
31. Chenju Zheng, Jiajiang Lv, Shengjun Zhou*, and Sheng Liu, Improvement of Luster Consistency between the p-Pad and the n-Pad of GaN-Based Light-Emitting Diodes via the Under-Etching Process, Journal of the Korean Physical Society 70, 765 (2017).
30. Shengjun Zhou*, Chenju Zheng, Jiajiang Lv, Yilin Gao, Ruiqing Wang, Sheng Liu, “GaN-based flip-chip LEDs with highly reflective ITO/DBR p-type and via hole-based n-type contacts for enhanced current spreading and light extraction, ” Optics & Laser Technology 92, 95–100 (2017).
29. Shengjun Zhou*, Xingtong Liu, “Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes,” Physica Status Solidi A 214, ** (2017).
28. Jiajiang Lv, Chenju Zheng, Quan Chen, Shengjun Zhou*, and Sheng Liu*, High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes, Physica Status Solidi A 213, 3150-3156 (2016).
27. Shengjun Zhou*, Chenju Zheng, Jiajiang Lv, Yingce Liu, Shu Yuan, Sheng Liu, and Han Ding, “Effect of profile and size of isolation trench on the optical and electrical performance of GaN-based high-voltage LEDs,” Applied Surface Science 366, 299-303(2016).
26. Jiajiang Lv, Chenju Zheng, Shengjun Zhou*, Fang Fang, and Shu Yuan, Highly efficient and reliable high power InGaN/GaN LEDs with 3D patterned step-like ITO and wavy sidewalls, Physica Status Solidi A 213, 1181-1186(2016).
25. Shengjun Zhou, Shu Yuan, L. Jay Guo, Sheng Liu*, and Han Ding, Highly efficient and reliable high power LEDs with patterned sapphire substrate and strip-shaped distributed current blocking layer, Applied Surface Science 355, 1013-1019(2015).
24. Shengjun Zhou, Bin Cao, Shu Yuan, and Sheng Liu*, Enhanced luminous efficiency of phosphor-converted LEDs by using back reflector to increase reflectivity for yellow light, Applied Optics 53, 8104-8110(2014).
23. Shengjun Zhou*, Shu Yuan, Sheng Liu, and Han Ding, “Improved light output power of LEDs with embedded air voids structure and SiO₂ current blocking layer,” Applied Surface Science 305, 252–258(2014).
22. Shengjun Zhou, Shufang Wang, Sheng Liu*, and Han Ding. High Power GaN-based LEDs with Low Optical Loss Electrode Structure. Optics & Laser Technology 54, 321(2013).
21. Shengjun Zhou, Fang Fang, Bin Cao, Sheng Liu*, and Han Ding, Enhancement in light output power of LEDs with reflective current blocking layer and backside hybrid reflector. Science China Technological Sciences 56, 1544(2013).
20. Shengjun Zhou, Sheng Liu*, and Han Ding. Enhancement in light extraction of LEDs with SiO₂ current blocking layer deposited on naturally textured p-GaN surface. Optics & Laser Technology 47, 127(2013).
19. Bin Cao, Shengjun Zhou, and Sheng Liu*. Effects of ITO Pattern on the Electrical and Optical Characteristics of LEDs. ECS Journal of Solid State Science and Technology 2, R24 (2013).
18. Bin Cao, Shuiming Li, Run Hu, Shengjun Zhou, Yi Sun, Zhiying Gan, and Sheng Liu*. Effects of Current Crowding on Light Extraction Efficiency of Conventional GaN-Based Light-emitting Diodes. Optics Express 21, 25381 (2013).
17. Shengjun Zhou, Bin Cao, Sheng Liu*, Han Ding. Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO. Optics & Laser Technology 44, 2302 (2012).
16. Shengjun Zhou, Bin Cao and Sheng Liu*. Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED. Applied Physics A: Materials Science & Processing 104, 369 (2011).
15. Quan Chen, Xiaobing Luo*, Shengjun Zhou, and Sheng Liu. Dynamic Junction Temperature Measurement for High Power LEDs. Review of Scientific Instruments 82, 084904 (2011).
14. Shengjun Zhou, Bin Cao and Sheng Liu*. Dry etching characteristics of GaN using Cl₂/BCl₃ inductively coupled plasmas. Applied Surface Science 257, 905 (2010).
13. Shengjun Zhou, and Sheng Liu*. Transient measurement of light-emitting diode characteristic parameters for production lines. Review of Scientific Instruments 80, 095102 (2009).
12. Shengjun Zhou, and Sheng Liu*. Study on sapphire removal for thin-film LEDs fabrication using CMP and dry etching. Applied Surface Science 255, 9469 (2009).
11. Shengjun Zhou, Shunsheng Guo, and Binhai Yu. Design of Testing System for LED Optoeletronic Parameter Based on LabVIEW. Semiconductor Optoelectronics 28, 501(2007).
10. Shengjun Zhou, Sheng Liu, and Bin Cao. Through silicon via-hole-based thin-film light emitting diodes. 60th Electronic Components and Technology Conference (ECTC), 2010.
9. Shengjun Zhou, Qin Zhang, Bin Cao, Sheng Liu. Evaluation of GaN-based Blue Light Emitting Diodes Based on Temperature/Humidity Accelerated Tests. 1^1th International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010.
8. Shengjun Zhou, Bin Cao and Sheng liu. Integration of GaN Thin Film and Dissimilar Substrate Material by Au-Sn Wafer Bonding and CMP. International Conference on Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2009.
7. Shengjun Zhou, Zhaohui Chen, Sheng Liu. Fabrication of Thin-film LEDs by Au-Sn Wafer Bonding & CMP. 6^th China International Forum on Solid State Lighting, 2009.
6. Shengjun Zhou, Chuan Liu, Xuefang Wang, Xiaobing Luo, Sheng Liu. Integrated Process for Silicon Wafer Thinning. 61th Electronic Components and Technology Conference (ECTC), 2011.
5. Sheng Liu, Shengjun Zhou, Kai Wang, Zhaohui Chen, and Xiaobing Luo. Several Co-design Issues Using DfX for Solid State Lighting. 2011 ICEPT-HDP.
4. Cao Li, Shengjun Zhou, Chang Hu, Xuefang Wang, Sheng Liu. Novel Design of Handling System for Silicon Wafer Thinning. 2011 ICEPT-HDP.
3. Zhaohui Chen, Shengjun Zhou, and Sheng Liu. Expert advisor for integrated virtual manufacturing and reliability for TSV/SiP based modules. 61th Electronic Components and Technology Conference (ECTC), 2011 (Oral Presentation).
2. Shengjun Zhou, and Sheng Liu. In situ measurement and binning system of LED for improved color consistency. 2011 ICEPT-HDP. 31
1. Cao Li, Xuefang Wang, Mingxiang Chen, Shengjun Zhou, Yaping Lv, and Sheng Liu. Novel design and reliability assessment of a 3D DRAM stacking based on Cu-Sn micro-bump bonding and TSV interconnection technology. 63^rd Electronic Components and Technology Conference (ECTC), 2013.
授权中国发明专利
22. 一种垂直结构深紫外LED芯片的制造方法，中国发明专利，专利号：ZL 2.8
21. 一种Micro-LED显示芯片及其制备方法，中国发明专利，专利号：ZL 0.9
20. 一种氮化铝外延结构及其生长方法，中国发明专利，专利号：ZL 3.X
19. 具有复合成核层的发光二极管芯片及其制备方法，中国发明专利，专利号：ZL 0.2
18. 激光诱导制备纳米合金颗粒的方法， 中国发明专利，专利号：ZL 8.2.
17. 一种激光快速制备金属纳米多孔材料的方法， 中国发明专利，专利号：ZL 4.3.
16. 一种深紫外LED芯片及其制备方法，中国发明专利，专利号：ZL .1.
15. 一种侧壁具有纳米棱镜结构的氮化镓基发光二极管芯片及其制备方法，中国发明专利，专利号：ZL 5.0.
14. 全色堆栈式RGB 倒装Micro-LED芯片阵列及其制备方法, 中国发明专利，专利号：ZL 4.1.
13. 倒装结构发光二极管芯片及其制备方法，中国发明专利，专利号：ZL 1.X.
12. 一种三基色垂直结构微型LED芯片制造与转印方法, 中国发明专利，专利号：ZL 9.4.
11. 具有纳米级二氧化硅光栅钝化层的GaN基发光二极管及其加工方法，中国发明专利，专利号：ZL 9.1.
10. 蚀刻阻挡层结构、含其的外延片及该外延片的制作方法，中国发明专利，专利号：ZL 0.2.
9. 基于激光直写的Micro-LED的制造方法，中国发明专利，专利号：ZL 6.4.
8. 紫外发光二极管外延结构及其制备，中国发明专利，专利号：ZL 4.0.
7. 一种半导体发光器件及其制备方法，中国发明专利，专利号：ZL 1.2.
6. 一种倒装芯片电极及其制备方法，中国发明专利，专利号：ZL 2.9.
5. 一种紫外发光二极管芯片及其制备方法，中国发明专利，专利号：ZL 1.1.
4. 高压直流氮化镓基发光二极管及其制造方法，中国发明专利，专利号：ZL 7.2.
3. LED卷对卷封装模组，中国发明专利，专利号：ZL 3.2.
2. 金属电极具有阵列型微结构的发光二极管及其制造方法，中国发明专利，专利号：ZL 6.8.
1. LED圆片级芯片尺寸封装结构及封装工艺，中国发明专利，专利号：ZL 2.1.
学术专著和会议论文集
周圣军，刘胜，《氮化镓基发光二极管芯片设计与制造技术》，科学出版社，2019
Sheng Liu and Shengjun Zhou, Proceedings of 2016 17th International Conference on Electronic Packaging Technology (ICEPT), ISBN: 978-1-5090-1396-8
主持科研项目
国家自然科学基金面上项目—面向高分辨率显示的三基色薄膜倒装Micro-LED芯片制造与巨量转印技术研究，负责人
国家自然科学基金面上项目—深紫外LED芯片金属线网格透明电极与高效出光结构制造的关键技术研究，负责人
中组部国家“****”青年拔尖人才支持计划，负责人
国家重点研发计划—激光制备纳米材料/结构及其用于低温连接的技术与装备及应用，子课题负责人
国家重点研发计划—基于激光制造的跨尺度和多材料纳连接的共性基础问题，子课题负责人
国家自然科学基金青年基金项目—大尺寸高压直流LED芯片制造的关键技术研究，项目负责人
国家863计划项目—基于失效机理的LED 照明系统可靠性与可控寿命技术研究，子课题负责人
长春光机所应用光学国家重点实验室开放基金—Mirco-LED显示芯片制造的关键技术研究，负责人
湖北省****基金—基于激光制造深紫外LED芯片高效出光结构的关键技术研究，负责人
国家自然科学基金（NSFC-广东联合重点项目）—晶圆级超大电流密度的3D LED直接白光芯片和芯片级封装制造，子课题负责人
博士后基金—高效率氮化物大功率LED芯片设计与制造技术研究（Grant No. 12R**），负责人
广东省部产学研结合项目—新型高速光谱仪关键技术及其在LED荧光粉在线测试中的应用，负责人
佛山市院市合作项目—新型大功率LED封装设备（球面成型机的研究及产业化），负责人
企业委托项目，半导体器件测试及包装设备，负责人
企业委托项目，高效率AlGaN基深紫外LED外延生长和芯片制造关键技术，负责人
参与科研项目
国家863计划项目-基于图形衬底的高效白光LED外延芯片产业化制备技术研究
国家863计划项目—应用导向型大功率白光LED可靠性及加速老化寿命试验方法研究
国家自然科学基金重点项目—大功率LED制造中的关键科学问题
粤港关键领域重点突破项目—全自动表面贴装LED测试分选机
国家重大科技专项“极大规模集成电路制造装备及成套工艺”的子项目—三维及系统级封装(SIP)技术的研究