个人基本简介:
职 称： 教授
学 位： 博士
毕业学校： 吉林大学
联系电话：
电子邮件： wchengx@mail.sysu.edu.cn

主要经历:
王成新，现任中山大学物理科学与工程技术学院教授，博士生导师。2002年12月毕业于吉林大学超硬材料国家重点实验室,并获理学博士学位;论文题目:金刚石基的宽禁带半导体异质结及相关理论研究;2005年5月于中山大学光电材料与技术国家重点实验室博士后出站;2005年6月-2007年6月,日本东京工业大学JSPS特别研究员（日本学术振兴会（JSPS）资助）;2007年6月,入选中山大学****,受聘于中山大学光电材料与技术国家重点实验室.近年来,一直从事低维光电功能材料设计应用及相关理论研究.

学科方向:
所在学科:材料物理与化学主要研究方向: 低维光电功能材料的设计、应用及理论研究 低维材料的高压物性研究 宽禁带半导体材料及器件研究每年招收博士后1名；博士研究生1-2名；硕士研究生2-3名.

荣誉获奖:
教育部新世纪优秀人才支持计划（2008）
2008年度广东省科学技术奖（自然科学类）一等奖（第二完成人）
广东省高等学校“千百十工程”培养对象(校级)
日本 JSPS Research Fellowship
中山大学****

代表论著:
Selected papers5.Size-dependant Oxidation Behavior for the Anomalous Initial Thermal Oxidation of Si H. Cui, Y. Sun, G. Z. Yang, G. W. Yang and C. X. Wang* Appl. Phys. Lett. 94, 083108, 2009.4.Origin of self-limiting oxidation of Si nanowires H. Cui, C. X. Wang*, and G. W. Yang Nano Lett. 8, 2731, 2008. 3.Origin of unusual rapid oxidation process for ultrathin oxidation (<2 nm) of silicon H. Cui, C. X. Wang*, and G. W. Yang Appl. Phys. Lett. 93, 203113, 2008.2.Micro- and nanocubes of carbon with C-8-like and blue luminescence P. Liu, Y. L. Cao, C. X. Wang, X. Y. Chen, and G. W. Yang Nano Lett. 8, 2570, 2008.1.Controllable fabrication and cathodoluminescence performance of high-index facets GeO2 micro- and nanocubes and spindles upon electrical-field-assisted laser ablation in liquid P. Liu, C. X. Wang, X. Y. Chen, G. W. Yang J. Phys. Chem. C 112, 13450,2008._______________________________________________45.C. X. Wang, and G. W. Yang, Thermodynamics of metastable pha se nucleation at the nanoscale, Materials Science and Engineering R, Vol. 49, pp.157-202, July, 2005.44.C. X. Wang, Masahiro Hirano, Hideo Hosono, Origin of Diamete r-Dependent Growth Direction of Silicon Nanowires, Nano Lett., Vol. 7, pp. 1552-1555, July, 2006.43.C. X. Wang, J. Chen, G. W. Yang, and N. S. Xu, Thermodynami c Stability and Ultrasmall-Size Effect of Nanodiamonds, Angew. Chem. Int. Ed., Vol. 44, No. 45, pp. 7414-7418, Nov., 2005.42.C. X. Wang, Y. H. Yang, N. S. Xu and G. W. Yang, Thermodynam ics of Diamond Nucleation on nanoscale, J. Am. Chem. Soc., Vol. 126, No. 36, pp11303-11306, Sep., 2004.41.C. X. Wang, P. Liu, H. Cui, and G. W. Yang, Nucleation and g rowth kinetics of nanocrystals formed upon pulsed-laser abla tion in liquid, Appl. Phys. Lett., Vol. 87, pp. 201913-201915, Nov., 2005.40.C. X. Wang, Guo-Wei Yang, Hong-Wu Liu, Yong-Hao Han, Ji-Fen g Luo, Chun-Xiao Gao, and Guang-Tian Zou, Experimental analy sis and theoretical model for anomalously high ideality fact ors in ZnO/diamond p-n junction diode, Appl. Phys. Lett., Vol. 84, No. 13, pp. 2427-2429, Mar., 2004.39.C. X. Wang, Y. H Yang, and G. W. Yang, Nanothermodynamic ana lysis of the low-threshold-pressure-synthesized cubic boron nitride in supercritical-fluid systems, Appl. Phys. Lett., Vol. 84, No.16, pp.3034-3036, Apr., 2004.38.C. X. Wang, Yu-Hua Yang, Liu-Xiang Qiu, Guo-Wei Yang, Yu-Lia ng Mao, and Xiao-Hong Yan, Phase stability of diamond nanocr ystals upon pulsed-laser-induced liquid-solid interfacial re action: experiments and ab initio calculations, Appl. Phys. Lett., Vol. 84, No. 9, pp. 1471-1473, Mar., 2004.37.C. X. Wang, Guo-Wei Yang, Tie-Chen Zhang, Hong-Wu Liu, Yong- Hao Han, Ji-Feng Luo, Chun-Xiao Gao, and Guang-Tian Zou, Hig h-quality heterojunction between p-type diamond single-cryst al film and n-type cubic boron nitride bulk single crystal, Appl. Phys. Lett., Vol. 83, No. 23, pp. 4854-4856, Dec., 2003.36.Q. X. Liu, C. X. Wang*, N. S. Xu, and G. W. Yang*, Nanowir e formation during catalyst assisted chemical vapor deposit ion, Phys. Rev. B, Vol. 72, pp. 085417-085422, Aug., 2005(* 为通讯作者).35.C.X. Wang, B. Wang, Y. H. Yang, and G. W. Yang, Thermodynam ic and kinetic size limit of nanowire growth, J Phys. Chem. B, Vol. 109, No. 20, pp. 9966-9969, May, 2005.34.C.X. Wang, Y.H. Yang, Q.X. Liu, and G.W. Yang, Nucleation t hermodynamics of cubic boron nitride upon high-pressure an d high-temperature supercritical fluid system in nanoscale, J Phys. Chem. B, Vol. 108, No. 2, pp. 728-731, Jan., 2004.33.C.X. Wang, G.W. Yang, C.X. Gao, H.W. Liu, Y.H. Han, J.F. Lu o, and G.T. Zou, Highly oriented growth of n-type ZnO film s on p-type single crystalline diamond films and fabricatio n of high-quality transparent ZnO/diamond heterojunction, Carbon, Vol. 42, No. 2, pp. 317-321, Feb., 2004.32.C. X. Wang, Y. H. Yang, and G. W. Yang, Thermodynamical pre dictions of nanodiamonds synthesized by pulsed laser ablati on in liquid, J. Appl. Phys., Vol. 97, No. 7, pp 066104, Mar., 2005.31.C. X. Wang, Qiu-Xiang Liu, and Guo-Wei Yang, A Nanothermody namic Analysis of Cubic Boron Nitride Nucleation upon Chemi cal Vapor Deposition, Chemical Vapor Deposition, Vol. 10, No.5, pp280-283, Oct., 2004.30.C.X. Wang, T.C. Zhang, H.W. Liu, C.X. Gao, and G.T. Zou, He terojunction diodes made from B-doped diamond grown heteroe pitaxially on Si-doped c-BN, J Phys-Condens. Mat., Vol. 14, No. 44, pp. 10989-10993, Nov., 2002.29.C.X. Wang, H.W. Liu, X. Li, T.C. Zhang, Y.H. Han, J.F. Lu o, C.X. Shen, C.X. Gao, and G.T. Zou, Preparation of ohmic n-type cubic boron nitride contacts, J Phys-Condens. Mat., Vol. 14, No. 44, pp. 10937-10940, Nov., 2002.28.C.X. Wang, G.W. Yang, T.C. Zhang, H.W. Liu, Y.H. Han, J.F. Luo, C.X. Gao, and G.T. Zou, Fabrication of transparent p- n hetero-junction diodes by p-diamond film and n-ZnO film, Diam. Relat. Mater., Vol. 12, No. 9, pp. 1548-1552, Sept., 2003.27.C.X. Wang, G.W. Yang, T.C. Zhang, H.W. Liu, Y.H. Han, J.F. Luo, C.X. Gao, and G.T. Zou, Preparation of low-threshold a nd high current rectifying heterojunction using B-doped dia mond grown on Si-treated c-BN crystals, Diam. Relat. Mater., Vol. 12, No. 8, pp. 1422-1425, Aug., 2003.26.C.X. Wang, C.X. Gao, H.W. Liu, Y.H. Han, J.F. Luo, and C. X. Shen, Preparation and transparent property of the n-ZnO/ p-diamond heterostructure, Chinese Phys. Lett., Vol. 20, No. 1, pp. 127-129, Jan., 2003.25.C.X. Wang, C.X. Gao, T.C. Zhang, H.W. Liu, Y.H. Han, J.F. L uo, and C.X. Shen, Preparation of p-n junction diode by B-d oped diamond film grown on Si-doped c-BN, Chinese Phys. Lett., Vol. 19, No. 10, pp. 1513-1515, Oct., 2002.24.Q. X. Liu, C. X. Wang, and G. W. Yang, Nucleation thermodyn amics of cubic boron nitride in pulsed-laser ablation in li quid, Phys. Rev. B Vol. 71, No. 15, pp. 155422, Apr., 2005.23.G. Ouyang, C.X. Wang, and G.W. Yang, Anomalous interfacial diffusion in immiscible metallic multilayers: a size-depend ent kinetic approach, Appl. Phys. Lett. Vol. 86, No. 17, pp. 171914, Apr., 2005.22.Y.H. Yang, C.X. Wang, B. Wang, N.S. Xu, and G.W. Yang, ZnO nanowire and amorphous diamond nanocomposites and field emi ssion enhancement, Chem. Phys. Lett. Vol. 403, No. 1-3, pp. 248-251, Feb., 2005.21.Qiu-Xiang Liu, Cheng-Xin Wang, Yu-Hua Yang, and Guo-Wei Yan g, One-dimensional nanostructures grown inside carbon nanot ubes upon vapor deposition: A growth kinetic approach, Appl. Phys. Lett. Vol. 84, No. 22, pp. 4568-4570, Jun., 2004.20.C.Y. Zhang, C.X. Wang, Y.H. Yang, and G.W. Yang, A nanoscal ed thermodynamic approach in nucleation of CVD diamond on n ondiamond surfaces, J Phys. Chem. B, Vol. 108, No. 8, pp. 2589-2593, Feb., 2004.19.Q.X. Liu, C.X. Wang, S.W. Li, J.X. Zhang, and G.W. Yang, Nu cleation stability of diamond nanowires inside carbon nanot ubes: A thermodynamic approach, Carbon, Vol. 42, No. 3, pp. 629-633, Mar., 2004.18.Q.X. Liu, C.X. Wang, W. Zhang, and G.W. Yang, Immiscible si lver-nickel alloying nanorods growth upon pulsed-laser indu ced liquid/solid interfacial reaction, Chem. Phys. Lett., Vol. 382, No. 1-2, pp. 1-5, Nov., 2003.17.Q.X. Liu, C.X. Wang, and G.W. Yang, Formation of silver par ticles and silver oxide plume nanocomposites upon pulsed-la ser induced liquid-solid interface reaction, Eur. Phys. J. B, Vol. 41, No. 4, pp. 479–483, Nov., 2004.16.Y. H. Yang, C. X. Wang, B. Wang, Z. Y. Li, J. Chen, D. H. C hen, N. S. Xu, G. W. Yang, and J. B. Xu, Radial ZnO nanowir e nucleation on amorphous carbons, Appl. Phys. Lett. Vol. 87, pp. 183109, Oct., 2005.15.H.W. Liu, C.X. Wang, C.X. Gao, Y.H. Han, J.F. Luo, G.T. Zo u, and C. Wen, Diamond films grown on seeded substrates by hot-filament chemical vapour deposition with H2 as the onl y feeding gas, J Phys-Condens.