个人基本简介:
职 称：副教授
学 位：博士
毕业学校：中山大学
联系电话：
电子邮件：wushx3@mail.sysu.edu.cn

主要经历:
2004-2009年：中山大学 物理科学与工程技术学院，硕博连读；
2009-2011年：新加坡南洋理工大学，博士后；
2011-至今：中山大学 物理科学与工程技术学院
2019.9-2020.8: 加州大学-洛杉矶分校（UCLA），访问****

学科方向:
（1）自旋电子学（自旋轨道转矩SOT，自旋转移力矩STT）
（2）二维材料的量子输运与器件
招生2021级专业硕士一名
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随着大数据时代的到来，数据将如能源、材料一样，成为战略性资源，视为“未来的新石油”。作为数据载体的非挥发性存储器是大数据时代的基石，其最大优点是，无电源供应时信息能长时间保存，如我们常用的U盘、相机SD卡都属于非挥发性存储器。随着数字化信息技术的飞速发展，智能手表、手机、平板电脑、数码相机等便携式电子设备呈爆炸式增长，人们对非挥发性存储的容量、速度等要求越来越高。探索新材料和进一步开发一种全新的下一代信息存储技术已成为半导体信息产业的迫切需求。自旋电子学器件是继半导体存储技术后的发展方向，是信息存储领域的研究热点。本研究组长期从事非挥发性信息存储研究，相关成果发表在《NPG Asia Materials》、《Physical Review X》、《ACS Applied Materials&Interfaces》、《Applied Physics Letters》等SCI论文70余篇。
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代表论著:
(1) Zhou, Wenqi; Li, Shuwei*; Wu, Shuxiang*; Magnetic and electronic properties of layered Sr2NiO2Cl2 with square planar coordination , Journal of Magnetism and Magnetic Materials, 2020, 514: 167195.
(2) Zhou, Wenqi; Li, Shuwei*; Wu, Shuxiang*; Large easy-plane magnetic anisotropy in square planar coordinate Sr2CoO2X2 (X = Cl, Br) , Journal of Magnetism and Magnetic Materials, 2020, 508: 166892.
(3) Dang, S.; Kang, S. D.; Dai, T.; Ma, X. Y.; Li, H. W.; Zhou, W. Q.; Wang, G. L.; Hu, P.; Sun, Y.; He, Z. H.; Yu, F. M.; Zhou, X.; Wu, S. X.*; Li, S. W.; Piezoelectric modulation of broadband photoresponse of flexible tellurium nanomesh photodetectors , Nanotechnology, 2020, 31(9): 095502.
(4) Yue Sun; Tian Dai; Zhihao He; Wenqi Zhou; Ping Hu; Shuwei Li; Shuxiang Wu*; Memristive phase switching in two dimensional 1T′-VSe2 crystals, Applied Physics Letters, 2020, 116: 033101.
(5) Dai, Tian; Kang, Songdan; Ma, Xingyuan; Dang, Shuai; Li, Hongwei; Ruan, Zilin; Zhou, Wenqi; Hu, Ping; Li, Shuwei; Wu, Shuxiang*; Multiple Transitions of Charge Density Wave Order in Epitaxial Few-Layered 1T'-VTe2 Films , Journal of Physical Chemistry C, 2019, 123(30): 18711-18716.
(6) S Dang; S D Kang; T Dai; X Y Ma; H W Li; W Q Zhou; G L Wang; P Hu; Y Sun; Z H He; F M Yu; X Zhou; S X Wu*; S W Li; Piezoelectric modulation of broadband photoresponse of flexible tellurium nanomesh photodetectors, Nanotechnology, 2019, 31: 095502.
(7) Yang Kungan; Wu Shuxiang; Yu Fengmei; Zhou Wenqi; Wang Yunjia; Meng Meng; Wang Gaili; Zhang Yueli; Li Shuwei*; Thermal stimulated current response in cupric oxide single crystal thin films over a wide temperature range , Journal of Physics D: Applied Physics, 2017, 50(3): 035303.
(8) Songdan Kang; Tian Dai; Shuai Dang; Xingyuan Ma; Gaili Wang; Hongwei Li; Ping Hu; Fengmei Yu; Xiang Zhou; Shuxiang Wu*; Shuwei Li; Broadband photoresponse of tellurium nanorods grown by molecular beam epitaxy, Chemical Physics Letters, 2019, 729: 49-53.
(9) Wang G L; Wu S X*; Meng M; Li H W; Li D; Hu P; Li S W*; Tuning anomalous Hall effect in bilayers films by the interfacial spin-orbital coupling , Journal of Applied Physics, 2018, 123(11): 113906.
(10) Li Dan; Hu Ping; Meng Meng; Li Hongwei; Wu Shuxiang*; Li Shuwei*; The relation of magnetic properties and anomalous Hall behaviors in Mn4N (200) epitaxial films , Materials Research Bulletin, 2018, 101: 162-166.
(11) Li Hongwei; Wang Gaili; Hu Ping; Li Dan; Dang Shuai; Ma Xingyuan; Dai Tian; Kang Songdan; Yu Fengmei; Zhou Xiang; Wu Shuxiang*; Li Shuwei; Suppression of anomalous Hall effect by heavy-fermion in epitaxial antiperovskite Mn4-xGdxN films , Journal of Applied Physics, 2018, 124(9): 093903.
(12) Wang G L; Wu S X*; Zhou W Q; Li H W; Li D; Dai T; Kang S D; Dang S; Ma X Y; Hu P; Li S W; Ferroelectric polarization control of spin states in Mn4N/PMN-PT heterostructures revealed by topological Hall effect , Applied Physics Letters, 2018, 113(12): 122403.
(13) Li Hongwei; Wang Gaili; Li Dan; Hu Ping; Zhou Wenqi; Ma Xingyuan; Dang Shuai; Kang Songdan; Dai Tian; Yu Fengmei; Zhou Xiang; Wu Shuxiang*; Li Shuwei*; Spin-orbit torque-induced magnetization switching in epitaxial Au/Fe4N bilayer films , Applied Physics Letters, 2019, 114(9): 092402.
(14) Ma Xingyuan; Dai Tian; Dang Shuai; Kang Songdan; Chen Xuexian; Zhou Wenqi; Wang Gaili; Li Hongwei; Hu Ping; He Zhihao; Sun Yue; Li Dan; Yu Fengmei; Zhou Xiang; Chen Huanjun*; Chen Xinman; Wu Shuxiang*; Li Shuwei; Charge Density Wave Phase Transitions in Large-Scale Few-Layer 1T-VTe2 Grown by Molecular Beam Epitaxy , ACS Applied Materials & Interfaces, 2019, 11(11): 10729-10735.
(15) Zhou Wenqi; Hu Ping; Li Shuwei*; Wu Shuxiang*; First-principles study of the magnetic and electronic properties of ACr(2)As(2) (A = Sr, Ba) , Journal of Magnetism and Magnetic Materials, 2019, 476: 254-257.
(16) Li Hongwei; Wang Gaili; Li Dan; Hu Ping; Zhou Wenqi; Dang Shuai; Ma Xingyuan; Dai Tian; Kang Songdan; Yu Fengmei; Zhou Xiang; Wu Shuxiang*; Li Shuwei*; Field-Free Deterministic Magnetization Switching with Ultralow Current Density in Epitaxial Au/Fe4N Bilayer Films , ACS Applied Materials & Interfaces, 2019, 11(18): 16965-16971.
(17) Kang Songdan; Dai Tian; Ma Xingyuan; Dang Shuai; Li Hongwei; Hu Ping; Yu Fengmei; Zhou Xiang; Wu Shuxiang*; Li Shuwei; Broad spectral response of an individual tellurium nanobelt grown by molecular beam epitaxy , Nanoscale, 2019, 11(4): 1879-1886.
(18) Hu P*; Wu S X; Wang G L; Li H W; Li D; Li S W*; Voltage controlled Bi-mode resistive switching effects in MnO2 based devices , Journal of Physics D: Applied Physics, 2018, 51(2): 025304.
(19) Wang, G. L.; Wu, S. X.*; Hu, P.; Li, S. W.*; Magnetic properties and evidence of current-induced perpendicular field in epitaxial ferrimagnetic Mn4N (002) film mixed with (111) phase , Journal of Applied Physics, 2017, 122(13): 133905.
(20) Li, Hongwei; Wu, Shuxiang; Hu, Ping; Li, Dan; Wang, Gaili; Li, Shuwei; Light and magnetic field double modulation on the resistive switching behavior in BaTiO3/FeMn/BaTiO3 trilayer films , Physics Letters A, 2017, 381(25-26): 2127-2130.
(21) Zhou, Wenqi; Wu, Shuxiang; Li, Shuwei; Relative stability, electronic structure, and magnetism of MnSe in rocksalt and zinc-blende structures , Journal of Magnetism and Magnetic Materials, 2015, 395: 166-172.
(22) Wu, Shuxiang; Liu, Y. J.; Xing, X. J.; Yu, X. L.; Xu, L. M.; Yu, Y. P.; Li, S. W.*; Surface reconstruction evolution and anatase formation in the process of oxidation of titanium nitride film , Journal of Applied Physics, 2008, 103(6): 063517.
(23) Wang, Y. J.; Zhou, W. Q.; Meng, M.; Wu, S. X.; Li, S. W.*; Light emission and magnetic properties of aluminum films grown on SrTiO3 by molecular beam epitaxy , AIP Advances, 2016, 6(6): 065228.
(24) Meng, M.; Wu, S. X.*; Zhou, W. Q.; Li, S. W.; Scaling of the anomalous Hall effect in epitaxial antiperovskite Mn3.5Dy0.5N involving multiple competing scattering mechanisms , Applied Physics Letters, 2016, 109(8): 082405.
(25) Wang, G. L.; Meng, M.; Zhou, W. Q.; Wang, Y. J.; Wu, S. X.; Li, S. W.*; Magnetic properties of Mn2N0.86 (111) thin film grown on MgO (001) substrate by molecular beam epitaxy , Materials Letters, 2016, 184: 291-293.
(26) Zhou, Wenqi; Wu, Shuxiang; Li, Shuwei*; First-principles study of the magnetic and electronic properties of AMnAs (A=Li, Na, K, Rb, Cs) , Journal of Magnetism and Magnetic Materials, 2016, 420: 19-22.
(27) Yang, K. G.; Hu, P.; Wu, S. X.; Ren, L. Z.; Yang, M.; Zhou, W. Q.; Yu, F. M.; Wang, Y. J.; Meng, M.; Wang, G. L.; Li, S. W.*; Room-temperature ferromagnetic CuO thin film grown by plasma-assisted molecular beam epitaxy , Materials Letters, 2016, 166: 23-25.
(28) Wang, Y. J.; Yang, M.; Ren, L. Z.; Zhou, W. Q.; Yang, K. G.; Yu, F. M.; Meng, M.; Wu, S. X.; Li, S. W.*; Enhanced Raman Scattering in Copper-doped TiO2 films , Thin Solid Films, 2016, 598: 311-314.
(29) Chen, Xinman*; Hu, Wei; Li, Yan; Wu, Shuxiang; Bao, Dinghua; Complementary resistive switching behaviors evolved from bipolar TiN/HfO2/Pt device , Applied Physics Letters, 2016, 108(5): 053504.
(30) Meng, M.; Wu Shuxiang*; Zhou, W.Q.; Ren, L. Z.; Wang, Y. J.; Wang, G. L.; Li, S. W.*; Anomalous Hall effect in epitaxial ferrimagnetic anti-perovskite Mn4-xDyxN films, Journal of Applied Physics, 2015, 118(5): 53911.
(31) Wu Shuxiang*; Li Shuwei*; Compliance current dependence of conversion between bipolar, unipolar, and threshold resistance switching in Mn3O4 films, AIP Advances, 2015, 5(8): 87154.
(32) Wu, Shuxiang; Xia, Y. Q.; Yu, X. L.; Liu, Y. J.; Li, S. W.*; Magnetic properties of MnxTi1-xN thin films grown by plasma-assisted molecular beam epitaxy, Journal of Applied Physics, 2007, 102(6): 63911.
(33) Yu, X. L.; Wu, Shuxiang; Liu, Y. J.; Li, S. W.*; Electronic spectrum of a helically Hund-coupled beta-MnO2, Solid State Communications, 2008, 146(3-4): 166-168.
(34) Wu, Shuxiang; Xu, L. M.; Xing, X. J.; Chen, S. M.; Yuan, Y. B.; Liu, Y. J.; Yu, Y. P.; Li, X. Y.; Li, S. W.*; Reverse-bias-induced bipolar resistance switching in Pt/TiO2SrTi0.99Nb0.01O3/Pt devices, Applied Physics Letters, 2008, 93(4): 43502.
(35) Yu, X. L.; Chen, J.; Wu,Shuxiang; Liu, Y. J.; Li, S. W.*; Polarized Raman scattering in helimagnetic beta-MnO2, Journal of Raman Spectroscopy, 2008, 39(10): 1440-1443.
(36) Xing, X. J.; Yu, Y. P.; Xu, L. M.; Wu, Shuxiang; Li, S. W.*; Magnetic properties of beta-MnO2 thin films grown by plasma-assisted molecular beam epitaxy, Journal of Physical Chemistry C, 2008, 112(39): 15526-15531.
(37) Li, X. Y.; Wu,Shuxiang; Xu, L. M.; Liu, Y. J.; Xing, X. J.; Li, S. W.*; Room-temperature ferromagnetism in (Mn, N)-codoped TiO(2) films grown by plasma assisted molecular beam epitaxy, Journal of Applied Physics, 2008, 104(9): 93914.
(38) Xing, X. J.; Yu, Y. P.; Wu, Shuxiang; Xu, L. M.; Li, S. W.*; Bloch-point-mediated magnetic antivortex core reversal triggered by sudden excitation of a suprathreshold spin-polarized current, Applied Physics Letters, 2008, 93(20): 202507.
(39) Li, X. Y.; Wu, Shuxiang; Xu, L. M.; Li, C. T.; Liu, Y. J.; Xing, X. J.; Li, S. W.*; Effects of depositing rate on structure and magnetic properties of Mn:TiO2 films grown by plasma-assisted molecular beam epitaxy, Materials Science and Engineering B-Solid State Materials for Advanced Technology, 2009, 156(1-3): 90-93.
(40) Yu, Y. P.; Xing, X. J.; Xu, L. M.; Wu, Shuxiang; Li, S. W.*; N-derived signals in the x-ray photoelectron spectra of N-doped anatase TiO2, Journal of Applied Physics, 2009, 105(12): 123535.
(41) Wu, Shuxiang; Li, X. Y.; Xing, X. J.; Hu, P.; Yu, Y. P.; Li, S. W.*; Resistive dependence of magnetic properties in nonvolatile Ti/Mn:TiO2/SrTi0.993Nb0.007O3/Ti memory device, Applied Physics Letters, 2009, 94(25): 253504.
(42) Li, Xinyu; Wu, Shuxiang; Hu, Ping; Xing, Xiangjun; Liu, Yajing; Yu, Yunpeng; Yang, Mei; Lu, Jingquan; Li, Shuwei*; Liu, Wen; Structures and magnetic properties of p-type Mn:TiO2 dilute magnetic semiconductor thin films, Journal of Applied Physics, 2009, 106(4): 43913.
(43) Xu, L. M.; Xing, X. J.; Yang, M.; Li, X. Y.; Wu, Shuxiang; Hu, P.; Lu, J. Q.; Li, S. W.*; Laser reactivation of Room-T (c) ferromagnetism in Mn-doped insulating TiO2 thin films, Applied Physics A-Materials Science & Processing, 2010, 98(2): 417-421.
(44) Ye, J. Y.; Li, Y. Q.; Gao, J.; Peng, H. Y.; Wu, Shuxiang; Wu, T.*; Nanoscale resistive switching and filamentary conduction in NiO thin films, Applied Physics Letters, 2010, 97(13): 132108.
(45) Chen, Zuhuang; Luo, Zhenlin; Qi, Yajun; Yang, Ping; Wu, Shuxiang; Huang, Chuanwei; Wu, Tom; Wang, Junling; Gao, Chen; Sritharan, Thirumany; Chen, Lang*; Low symmetry monoclinic M-C phase in epitaxial BiFeO3 thin films on LaSrAlO4 substrates, Applied Physics Letters, 2010, 97(24): 242903.
(46) Wu, Shuxiang; Peng, H. Y.; Wu, T.*; Concurrent nonvolatile resistance and capacitance switching in LaAlO3, Applied Physics Letters, 2011, 98(9): 93503.
(47) Lv, Qibiao; Wu, Shuxiang; Lu, Jingquan; Yang, Mei; Hu, Ping; Li, Shuwei*; Conducting nanofilaments formed by oxygen vacancy migration in Ti/TiO2/TiN/MgO memristive device, Journal of Applied Physics, 2011, 110(10): 104511.
(48) Hu, P.; Lu, J. Q.; Wu, Shuxiang; Lv, Q. B.; Li, S. W.*; Coexistence of Memristive Behaviors and Negative Capacitance Effects in Single-Crystal TiO2 Thin-Film-Based Devices, IEEE Electron Device Letters, 2012, 33(6): 890-892.
(49) Yu, Y. P.; Liu, W.; Wu, Shuxiang; Li, S. W.*; Impact of Nitrogen Doping on Electrical Conduction in Anatase TiO2 Thin Films, Journal of Physical Chemistry C, 2012, 116(37): 19625-19629.
(50) Cui, Yimin; Peng, Haiyang; Wu, Shuxiang; Wang, Rongming; Wu, Tom*; Complementary Charge Trapping and Ionic Migration in Resistive Switching of Rare-Earth Manganite TbMnO3, ACS Applied Materials & Interfaces, 2013, 5(4): 1213-1217.
(51) Yu, Fengmei; Liu, Yajing; Yang, Mei; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei*; Accompanying growth and room-temperature ferromagnetism of eta-Mn3N2 thin films by molecular beam epitaxy, Thin Solid Films, 2013, 531: 228-232.
(52) Ren, Lizhu; Wu, Shuxiang; Yang, Mei; Zhou, Wenqi; Li, Shuwei*; Magnetic properties of Mn3O4 film under compressive stress grown on MgAl2O4 (001) by molecular beam epitaxy, Journal of Applied Physics, 2013, 114(5): 53907.
(53) Wu, Shuxiang*; Wu, Guangheng; Qing, Jian; Zhou, Xiang; Bao, Dinghua; Yang, Guowei; Li, Shuwei*; Electrically induced colossal capacitance enhancement in LaAlO3/SrTiO3 heterostructures, NPG Asia Materials, 2013, 5.
(54) Wu, Shuxiang; Luo, Xin; Turner, Stuart; Peng, Haiyang; Lin, Weinan; Ding, Junfeng; David, Adrian; Wang, Biao; Van Tendeloo, Gustaaf; Wang, Junling; Wu, Tom*; Nonvolatile Resistive Switching in Pt/LaAlO3/SrTiO3 Heterostructures, Physical Review X, 2013, 3(4): 41027.
(55) Ren, Lizhu; Yang, Mei; Zhou, Wenqi; Wu, Shuxiang; Li, Shuwei*; Influence of Stress and Defect on Magnetic Properties of Mn3O4 Films Grown on MgAl2O4 (001) by Molecular Beam Epitaxy, Journal of Physical Chemistry C, 2014, 118(1): 243-249.
(56) Chen, Xinman; Hu, Wei; Wu, Shuxiang; Bao, Dinghua*; Stabilizing resistive switching performances of TiN/MgZnO/ZnO/Pt heterostructure memory devices by programming the proper compliance current, Applied Physics Letters, 2014, 104(4): 43508.
(57) Yang, M.; Qin, N.; Ren, L. Z.; Wang, Y. J.; Yang, K. G.; Yu, F. M.; Zhou, W. Q.; Meng, M.; Wu, Shuxiang; Bao, D. H.; Li, S. W.*; Realizing a family of transition-metal-oxide memristors based on volatile resistive switching at a rectifying metal/oxide interface, Journal of Physics D: Applied Physics, 2014, 47(4): 45108.
(58) Lin, Wei-Nan; Ding, Jun-Feng; Wu, Shuxiang; Li, Yong-Feng; Lourembam, James; Shannigrahi, Santiranjan; Wang, Shi-Jie; Wu, Tom*; Electrostatic Modulation of LaAlO3/SrTiO3 Interface Transport in an Electric Double-Layer Transistor, Advanced Materials Interfaces, 2014, 1(1): **.
(59) Ren, Lizhu; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei*; Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism, Journal of Crystal Growth, 2014, 389: 55-59.
(60) Yu, Fengmei; Ren, Lizhu; Meng, Meng; Wang, Yunjia; Yang, Mei; Wu, Shuxiang; Li, Shuwei*; Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy, Journal of Applied Physics, 2014, 115(13): 133911.
(61) Yang, M.; Ren, L. Z.; Wang, Y. J.; Yu, F. M.; Meng, M.; Zhou, W. Q.; Wu, Shuxiang; Li, S. W.*; Direct evidences of filamentary resistive switching in Pt/Nb-doped SrTiO3 junctions, Journal of Applied Physics, 2014, 115(13): 134505.
(62) Wu, Shuxiang*; Ren, Lizhu; Qing, Jian; Yu, Fengmei; Yang, Kungan; Yang, Mei; Wang, Yunjia; Meng, Meng; Zhou, Wenqi; Zhou, Xiang; Li, Shuwei*; Bipolar Resistance Switching in Transparent ITO/LaAlO3/SrTiO3 Memristors, ACS Applied Materials & Interfaces, 2014, 6(11): 8575-8579.
(63) Wu, Shuxiang*; Li, Shuwei*; Light-Induced Giant Capacitance Enhancement in LaAlO3/SrTiO3 Heterostructures, Nanoscience and Nanotechnology Letters, 2014, 6(7): 565-569.
(64) Ren, Lizhu; Zhou, Wenqi; Wang, Yunjia; Meng, Meng; Wu, Shuxiang; Li, Shuwei*; Magnetic properties of Mn3O4 film with a coexistence of two preferential orientations, Journal of Applied Physics, 2014, 116(2): 23906.
(65) Hu, P.*; Wu, Shuxiang; Li, S. W.; Enhancement of room-temperature ferromagnetism in manganese oxide thin films grown on Nb:SrTiO3 substrates, Modern Physics Letters B, 2014, 28(20): **.
(66) Wu, Shuxiang*; Chen, Xinman; Ren, Lizhu; Hu, Wei; Yu, Fengmei; Yang, Kungan; Yang, Mei; Wang, Yunjia; Meng, Meng; Zhou, Wenqi; Bao, Dinghua; Li, Shuwei*; Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices, Journal of Applied Physics, 2014, 116(7): 74515.
(67) Wu, Shuxiang*; Ren, Lizhu; Yu, Fengmei; Yang, Kungan; Yang, Mei; Wang, Yunjia; Meng, Meng; Zhou, Wenqi; Li, Shuwei*; Colossal resistance switching in Pt/BiFeO3/Nb:SrTiO3 memristor, Applied Physics A-Materials Science & Processing, 2014, 116(4): 1741-1745.
(68) Meng, M.; Wu, Shuxiang*; Ren, L. Z.; Zhou, W. Q.; Wang, Y. J.; Wang, G. L.; Li, S. W.*; Enlarged Mn 3s splitting and room-temperature ferromagnetism in epitaxially grown oxygen doped Mn2N0.86 films, Journal of Applied Physics, 2014, 116(17): 173911.
(69) Chen, Xinman*; Hu, Wei; Wu, Shuxiang; Bao, Dinghua; Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays, Journal of Alloys and Compounds, 2014, 615: 566-568.
(70) Meng, M.; Wu, Shuxiang*; Ren, L. Z.; Zhou, W. Q.; Wang, Y. J.; Wang, G. L.; Li, S. W.*; Extrinsic anomalous Hall effect in epitaxial Mn4N films, Applied Physics Letters, 2015, 106(3): 32407.