黄 浦

姓名: 黄 浦
性别： 男
研究方向：低维体系的光电性质计算
职称：讲师、助理教授

邮箱：arvin_huang@szu.edu.cn
座机：


个人简介 毕业于北京大学凝聚态物理专业，一直致力于低维纳米材料的电子结构计算和光电性质调控研究，新效应、新现象研究，新结构设计，及其相关方法模块研究，具有深厚的第一性原理计算模拟和材料设计方面的经验和工作积累，在国际著名刊物发表多篇高水平论文，包括Nature Communications, Advanced Materials, ACS Nano, Advanced Functional Materials, Physical Review B, Journal of the American Chemical Society, Journal of Materials Chemistry A, Journal of Physical Chemistry Letters, Chemistry of Materials和Small等，同时担任多个国际期刊审稿人，主持国家自然科学基金、参与深圳市科技创新委多个科研项目。地址：深圳大学沧海校区致腾楼913室 电话：** 邮箱：arvin_huang@szu.edu.cn
个人信息 Publication Lists [1] Y. Zhang#, P. Huang#, J. Guo#, R. Shi, W. Huang, Z. Shi, L. Wu, F. Zhang, L. Gao, C. Li, X. Zhang*, J. Xu* and H. Zhang*, “Graphdiyne-Based Flexible Photodetectors with High Responsivity and Detectivity”, Adv. Mater. 32, ** (2020). [2] J. Hu, W. Xiong*, P. Huang*, Y. Wang, C. Cai and J. Wang, “First-principles study on strain-modulated negative differential resistance effect of in-plane device based on heterostructure tellurene”, Appl. Surf. Sci. 528, 146957 (2020). [3] P. Huang, P. Zhang, S. Xu, H. Wang, X. Zhang*, and H. Zhang*, “Recent Advances in Two-Dimensional Ferromagnetism: Materials Synthesis, Physical Properties and Device Applications”, Nanoscale, 12, 2309-2327 (2020). [4] P. Huang#, Z. Xia#, X. Gao, J. M. Rondinelli, X. Zhang*, H. Zhang, K. R. Poeppelmeier* and A. Zunger*, “Ferri-chiral Compounds with Potentially Switchable Dresselhaus Spin Splitting”, Phys. Rev. B 102, 235127 (2020). [5] X. Chen, W. Chen, S. Yu, S. Xu, X. Rong, P. Huang*, X. Zhang*, and S.-H. Wei*, “Designing Dirac Semimetals with a Honeycomb Na3Bi-lattice via Isovalent Cation Substitution”, J. Mater. Chem. C, 8, 1257-1264 (2020). [6] W. Han#, P. Huang#, L. Li, F. Wang, P. Luo, K. Liu, X. Zhou, H. Li, X. Zhang, Y. Cui, and T. Zhai. “Two-dimensional Inorganic Molecular Crystals”, Nat. Commun. 10, 1-10 (2019). [7] J. Duan#, P. Huang#, K. Liu, B. Jin, A. A. Suleiman, X. Zhang, X. Zhou, and T. Zhai, “Growth of Highly Anisotropic 2D Ternary CaTe2O5 Flakes on Molten Glass”, Adv. Funct. Mater., 29, ** (2019). [8] Y. Zhang, F. Zhang, L. Wu, Y. Zhang, W. Huang, Y. Tang, L. Hu, P. Huang*, X. Zhang*, H. Zhang*, “Van der Waals Integration of Bismuth Quantum Dots-decorated Tellurium Nanotubes (Te@Bi) Heterojunctions and Plasma-Enhanced Optoelectronic Applications”, Small, 15, ** (2019). [9] W. Huang, Y. Zhang, Q. You, P. Huang*, Y. Wang, Z. N. Huang, Y. Ge, L. Wu, Z. Dong, X. Dai Y. Xiang, J. Li, X. Zhang*, and H. Zhang*. “Enhanced Photodetection Properties of Tellurium@Selenium Roll-to-Roll Nanotube Heterojunctions”, Small, 15, ** (2019). [10] X. Chen, P. Huang, X. Zhu, S. Zhuang, H. Zhu, J. Fu, A. S. Nissimagoudar, W. Li, X. Zhang, L. Zhou, Y. Wang, Z. Lv, Y. Zhou, and S.-T. Han, “Keggin-Type Polyoxometalate Cluster As An Active Component For Redox-Based Nonvolatile Memory”, Nanoscale Horizons, 4, 697-704 (2019). [11] X. Chen, X. Zhu, S. R. Zhang, J. Pan, P. Huang, C. Zhang, G. Ding, Y. Zhou, K. Zhou, V. A. L. Roy, and S.-T. Han, “Controlled Nonvolatile Transition in Polyoxometalates-Graphene Oxide Hybrid Memristive Devices”, Adv. Mater. Technol., 4, ** (2019). [12] X. Hu, P. Huang, K. Liu, B. Jin, X. Zhang, X. Zhang, X. Zhou, and T. Zhai, “Salt-Assisted Growth of Ultrathin GeSe Rectangular Flakes for Phototransistors with Ultrahigh Responsivity”, ACS Appl. Mater. & Inter., 11, 23353-23360 (2019). Year 2018 [13] B. Jin#, P. Huang#, Q Zhang, X. Zhou, X. Zhang, L. Li, J. Su, H. Li, and T. Zhai, “Self-Limited Epitaxial Growth of Ultrathin Nonlayered CdS Flakes for High-Performance Photodetectors”, Adv. Funct. Mater. 28, ** (2018). [14] X. Hu, P. Huang, B. Jin, X. Zhang, H. Li*, X. Zhou*, and T. Zhai*, “Halide-induced self-limited growth of ultrathin nonlayered Ge flakes for high-performance phototransistors”, J. Am. Chem. Soc. 140, 12909-12914 (2018).Years before 2017 [15] Yangyang Wang#, Pu Huang#, Meng Ye, Ruge Quhe, Yuanyuan Pan, Han Zhang, Hongxia Zhong, Junjie Shi, and Jing Lu, “Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene”, Chem. Mater. 29, 2191-2201 (2017). [16] Pu Huang, Jun-jie Shi, Ping Wang, Min Zhang, Yi-min Ding, Meng Wu, Jing Lu and Xin-qiang Wang, “Origin of the Wide Band Gap from 0.6 to 2.3 eV in InN Photovoltaic Material: Quantum Confinement from Surface Nanostructure”, J. Mater. Chem. A 4, 17412-17418 (2016). [17] Pu Huang, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Xiong Cao, Meng Wu and Jing Lu, “Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure”, J. Phys. Chem. Lett. 7, 2888-2892 (2016). [18] Pu Huang, Hua Zong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Ying-ping He, Jing Lu and Xiao-dong Hu, “Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect”, ACS Nano 9, 9276-9283 (2015). [19] Yi-min Ding, Jun-jie Shi, Congxin Xia, Min Zhang, Juan Du, Pu Huang, Meng Wu, Hui Wang, Yu-lang Cen and Shu-hang Pan, “Enhancement of Hole Mobility in InSe Monolayer via an InSe and Black Phosphorus Heterostructure”, Nanoscale 9, 14682- 14689 (2017). [20] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Xiong Cao and Meng Wu, “Modulation of Electronic and Optical Properties of ZnO by Inserting an Ultrathin ZnX(X = S, Se and Te) Layer to Form Short-Period (ZnO)5/(ZnX)1 Superlattice”, J. Alloy Compd. 711, 581-591 (2017). [21] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Meng Wu, Xiong Cao, Xin Rong, and Xinqiang Wang, “Improvement of p-Type Conductivity in Al-rich AlGaN Substituted by MgGa δ-Doping (AlN)m/(GaN)n (m≥n) Superlattice”, J. Alloy Compd. 686, 484-488 (2016). [22] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Xiong Cao, Meng Wu and Zhi-min Liao, “Breakthrough of the p-Type Doping Bottleneck in ZnO by Inserting an Ultrathin ZnX (X=S, Se and Te) Layer Doped with NX or AgZn”, J. Phys. D: Appl. Phys. 49, 095104 (2016). [23] Yi-min Ding, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Pu Huang, Meng Wu and Xiong Cao, Improvement of n-Type Conductivity in Hexagonal Boron Nitride Monolayers by Doping, Strain and Adsorption. RSC Adv. 6, 29190-29196 (2016). [24] Hong-xia Zhong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Pu Huang and Yi-min Ding, “Improving p-type Doping Efficiency in Al0.83Ga0.17N Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice with MgGa-ON δ-Codoping: Role of O-atom in GaN Monolayer”, AIP Adv. 5, 017114 (2015). [25] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Ying-ping He and Xiong Cao, “Reduction of the Mg Acceptor Activation Energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-Doping (AlN)5(GaN)1: the Strain Effect”, J. Phys. D: Appl. Phys. 48, 475104 (2015). [26] Yi-min Ding, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Pu Huang, Ying-ping He and Xiong Cao, “Origin of a Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON and 3ON-VAl Surface Defects”, J. Phys. Chem. C. 119, 21688-21693 (2015). [27] Xiong Cao, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Pu Huang, Yi-min Ding and Meng Wu, “Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g?C3N4, and g?CN: Electric Field Effect”, J. Phys. Chem. C 120, 11299-11305 (2015). [28] Hong-xia Zhong, Jun-jie Shi, Min Zhang, Xin-he Jiang, Pu Huang and Yi-min Ding, “Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa δ-Doping: Mg Local-Structure Effect”, Sci. Rep. 4, 6710 (2014). [29] Xin-he Jiang, Jun-jie Shi, Min Zhang, Hong-xia Zhong, Pu Huang, Yi-min Ding, Tong-jun Yu, Bo Shen, Jing Lu and Xihua Wang, “Enhancement of TE Polarized Light Extraction Efficiency in Nanoscale (AlN)m/(GaN)n(m>n) Superlattice Substitution for Al-Rich AlGaN Disorder Alloy: Ultra-thin GaN Layer Modulation”, New J. Phys. 16, 113065-113087 (2014). [30] Pu Huang, Jun-jie Shi, Min Zhang, Xin-he Jiang, Hong-xia Zhong, Yi-min Ding, Jing Lu and Xihua Wang, “Band Edge Modulation and Interband Optical Transition in AlN:MgAl-ON Nanotubes”, Mater. Res. Express 1, 025030 (2014). [31] Tie-Cheng Zhou, Jun-jie Shi, Min Zhang, Mao Yang, Hong-xia Zhong, Xin-he Jiang and Pu Huang, Band Edge Modulation and Light Emission in InGaN Nanowires Due to the Surface State and Microscopic Indium Distribution. J. Phys. Chem. C 117, 16231-16237 (2013).