王江涌 [ 教授 ] 物理系 管理个人简历



性别：男


出生日期：


职务：


学术兼职：广东省表面分析专业委员会副主任委员；中国机械工程学会高级会员；中国机械工程学会表面工程分会常务委员；“功能材料”、“表面技术”编委


社会兼职：


电话：


手机：**


传真：


E-mail：wangjy@stu.edu.cn




学历简介：
学士 1984 武汉大学物理系理论物理专业
硕士 1989 四川大学原子与分子物理研究所原子与分子物理专业
博士 1997 南非University of the Free State 物理系表面物理专业



工作经历：
1984年7月 至 1986年8月 武汉科技大学物理系 助教
1989年7月 至 1994年2月 武汉科技大学物理系 讲师
1998年1月 至 1998年9月 南非 University of the Free State 物理系 博士后 (Research Associate)
1998年10月 至 2001年2月 美国 Kansas State University 物理系 博士后 (Research Associate)
2001-3 至 2009-4 德国 Max Planck Institute for Metals Research 资深研究员(Senior Scientist)
2009年5月 至 现在 汕头大学物理系 教授



担任课程： 本科生: 普通物理，复变函数，数理方程，理论力学
研究生: 材料物理研究方法，材料科学基础，表面与界面的偏析


主要研究兴趣： 薄膜中的扩散、偏析、相变及表征


承担项目：
[ 1 ] 国家自然科学基金项目 薄膜中界面相变机制的研究；2013/1/1—2016/12/31；
[ 2 ] 国家部委其它科技项目 利用高分辨深度剖析方法确定纳米结构中的互扩散系数；2011/6/21—2013/8/31；
[ 3 ] 汕头市科技局横向项目 柔性衬底上镀金属隔热膜的研发应用 2017.12-2019.11；
[ 4 ] 广东省科技计划项目 新型触控显示器件功能薄膜材料体系的设计与应用 2017. 1-2019.12；
[ 5 ] 科技部国际合作交流项目 用先进的物理手段来改进生物医学材料的性能 2014-2016；
[ 6 ] 国家自然科学基金项目 中国-以色列NSFC-ISF合作交流项目 纳米尺度下扩散机制的研究：纳米颗粒及纳米层结构中的扩散 2015-2018；
[ 7 ] 科技部国际合作交流项目 超薄层深度剖析的定量分析 2016.12-2018.11；



研究成果：
[ 1 ] 2019年；
[ 2 ] S.Y. Lian, B. Lin, X.L. Yan, J.Y. Wang*, C.K. Xu*；Preferential sputtering and mass conservation in AES and SIMS depth profiling；Vacuum, 160 (2019) 109-113.；
[ 3 ] X.L. Yan, M.M. Duvenhage, J.Y. Wang*, H.C. Swart*, J.J. Terblans*；Evaluation of sputtering induced surface roughness development of Ni/Cu multilayers thin films by Time-of-Flight Secondary Ion Mass Spectrometry depth profiling with different energies O2+ ion bombardment；Thin Solid Films, 669 (2019) 188–197.；
[ 4 ] S. Hofmann, G. Zhou, J. Kovac, S. Drev, S.Y. Lian, B. Lin, Y. Liu, J.Y. Wang*；Preferential sputtering effect in depth profling of multilayers with SIMS, XPS and AES；Applied Surface Science, 483 (2019) 140–155.；
[ 5 ] S.Y. Lian, K.J. Kim, T.G. Kim, S. Hofmann, J.Y. Wang*；Prediction and experimental determination of the layer thickness in SIMS depth profling of Ge/Si multilayers: Effect of preferential sputtering and atomic mixing；Applied Surface Science, 481 (2019) 1103–1108.；
[ 6 ] Yuanyuan Chen, Zhangping Hu, Yifei Xu, Jiangyong Wang, Peter Schützendübe,；Microstructure evolution and interface structure of Al-40 wt% Si composites produced by high-energy ball milling；Journal of Materials Science & Technology, 35 (2019) 512-519.；
[ 7 ] J. Wang, P. Schützendübe, YX. Qiu, JY Wang, Y. Huang, YC. Liu, ZuminWang*；Tailoring metal film texture by use of high atomic mobility at metal-semiconductor interfaces；Applied Surface Science, 475 (2019) 117–123.；
[ 8 ] Representative papers: (* 为通讯作者 corresponding author)；
[ 9 ] Yue Gong, Yuyang Chen, Qinghua Zhang, Fanqi Meng, Jin-An Shi, Xinyu Liu, Xiaozhi Liu, Jienan Zhang, Hao Wang, Jiangyong Wang, Qian Yu*, Ze Zhang, Qiang Xu, Ruijuan Xiao, Yong-Sheng Hu, Lin Gu*, Hong Li*, Xuejie Huang, Liquan Chen；Three-dimensional atomic-scale observation of structural evolution of cathode material in a working all-solid-state battery；Nature Communications, 9 (2018) 3341；
[ 10 ] S. Hofmann, S.Y. Lian, Y. S. Han, Q.R. Deng, J.Y. Wang*；Correlation of depth resolution and preferential sputtering in SIMS depth profiles of thin layers；Thin Solid Films, 662 (2018) 165–167；
[ 11 ] S. Hofmann, S.Y. Lian, Y. S. Han, Y. Liu, J.Y. Wang*；Depth resolution and preferential sputtering in depth profiling of delta layers；Applied Surface Science, 455 (2018) 1045–1056；
[ 12 ] XinLiang Yan, JiangYong Wang*, Hendrik Swart and Koos Terblans；AES study of Cu and S surface segregation in a ternary Ni-Cu(S) alloy in combination with a linear heating method；Journal of Alloys and Compounds, 768 (2018) 875-882；
[ 13 ] Zhen Li, Shun Hui Lin, Gui Ming Qiu, Jiang Yong Wang, and Yun Peng Yu*；A method for determining band parameters from the optical absorption edge of amorphous semiconductor: Application to a-Si:H；Journal of Applied Physics, 124 (2018) 025702；
[ 14 ] Yifei Xu, Xinyu Liu, Lin Gu, Jiangyong Wang, Peter Schützendübe, Yuan Huang, Yongchang Liu, Zumin Wang*；Natural oxidation of amorphous CuxZr1-x alloys；Applied Surface Science, 457 (2018) 396–402；
[ 15 ] JY Wang*, ZM Wang, LPH Jeurgens and EJ Mittemeijer；Diffusion, Crystallization, and Layer Exchange upon Low-Temperature Annealing of Amorphous Si/Polycrystalline Al-Layered Structures；Chapter 3 (pp. 61-101), Ed: ZM Wang, LPH Jeurgens and EJ Mittemeijer, Pan Stanford Publishing Pte. Ltd., USA, 2015.；
[ 16 ] S. Hofmann, Y.S. Han, J.Y. Wang*；Depth resolution and preferential sputtering in depth profiling of sharp interfaces；Applied Surface Science, 410 (2017) 354-362.；
[ 17 ] Yue Gong, Jienan Zhang, Liwei Jiang, Jin-An Shi, Qinghua Zhang, Zhenzhong Yang, Dongli Zou, Jiangyong Wang, Xiqian Yu, Ruijuan Xiao, Yong-Sheng Hu, Lin Gu, Hong Li, and Liquan Chen；In Situ Atomic-Scale Observation of Electrochemical Delithiation Induced Structure Evolution of LiCoO2 Cathode in a Working All-Solid-State Battery；Journal of the American Chemical Society (Communication), 139, (2017) 4274-4277；
[ 18 ] X.L. Yan, E. Coetsee, J.Y. Wang* , H.C. Swart* and J.J. Terblans*；Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films；Applied Surface Science, 411 (2017) 73-81；
[ 19 ] Bruce M. Law*, Sean P. McBride, Jiang Yong Wang, Haeng Sub Wi, Govind Paneru, Santigo Betelu, Baku Ushijima, Youichi Takata, Bret Flanders, Fernando Bresme, Hiroki Matsubara, Takanori Takiue, Makoto Aratono；Line tension and its influence on droplets and particles at surfaces；Progress in Surface Science，92（2017）1-39.；
[ 20 ] H.L.Kang, J.B. Lao, Z.P. Li, W.Q. Yao*, C. Liu, J.Y. Wang*；Reconstruction of GaAs/AlAs supperlattice multilayer structure by quantification of AES and SIMS sputter depth profiles；Applied Surface Science, 388 (2016) 584-588.；
[ 21 ] S. Hofmann, Y. Liu, W. Jian, H.L. Kang, J.Y. Wang*；Depth resolution in sputter profiling revisited；Surface and Interface Analysis, 48（2016）1354-1369.；
[ 22 ] 康红利, 简玮, 韩逸山, 刘毅, 王江涌*；溅射深度剖析定量分析及其应用研究进展；汕头大学学报（自然科学版）, Vol. 31, No. 2, PP. 3-24, 2016 （特邀综述）；
[ 23 ] B. Lin, W. Jian and J.Y. Wang；Understanding of phase transformation in Pd/a-Si bilayered system；Journal of Alloys and Compounds, 665 (2016) 42-47.；
[ 24 ] Lin Huang, Wei Jian, Bing Lin, Yuren Wen, Lin Gu and Jiangyong Wang*；Thermodynamic understanding of Sn whisker growth on the Cu surface in Cu(top)-Sn(bottom) bilayer system upon room temperature aging；Journal of Applied Physics, 117 (2015) 215308；
[ 25 ] XinLiang Yan, Yi Liu, Hendrik Swart, JiangYong Wang and Koos Terblans；Investigation of interdiffusion and depth resolution in Cu/Ni multilayer by means of AES depth profiling；Applied Surface Science, 364 (2016) 567–572.；
[ 26 ] Y. Liu, S. Hofmann, J. Y. Wang*, B. R. Chakraborty；Quantitative reconstruction of Ta/Si multilayer depth profiles obtained by ToF- SIMS using Cs+ ion sputtering；Thin Solid Films, 591 (2015) 60-65；
[ 27 ] Y. Liu, S. Hofmann, J.Y. Wang*；An Analytical Depth Resolution Function for the MRI Model；Surface and Interface Analysis (Rapid Communication)，45(2013) 1659-1660；
[ 28 ] Y. Liu, W. Jian, J.Y. Wang*, S. Hofmann, K. Shimizu；Quantitative reconstruction of the GDOES sputter depth profile of a monomolecular layer structure of thiourea on copper；Applied Surface Science 331 (2015) 140–149；
[ 29 ] Min Lin, Xu Chen, Xinyi Li, Chi Huang, Yanxiu Li, Jiangyong Wang*；Local equilibrium in the dissolution and segregation kinetics of Ag on Cu(111) surface；Applied Surface Science, 297 (2014) 130-133；
[ 30 ] Y. Liu, W.H. Yu, J. Y. Wang*；A model for quantification of GDOES depth profiles；Vacuum, 113 (2015) 5-10；
[ 31 ] 其它；
[ 32 ] Zhiqiang Xu, Yifei Xu, An Zhang, Jiangyong Wang, Zumin Wang*；Oxidation of amorphous alloys；Journal of Materials Science and Technology, 34 (2018) 1997–2005.；
[ 33 ] Deng, Q.R, Kang, H.L, Han, Y.S, Zhang, X., Mai, X.W, Huang, Q.R and Wang, J.Y*；Characterization of a Single Layer of Si0.73Ge0.27 and a Quantum-Well Structure of Si0.4Ge0.6/Ge by Quantitative SIMS Depth Profiling Using the Analytical Depth Resolution Function of the MRI Model；In Proceedings of the International Workshop on Materials, Chemistry and Engineering (IWMCE 2018), 486-492.；
[ 34 ] Lian, S.Y, Xiao, S.H, Yu, Y.P, Lin, S.H, Zhang, H.Y, Lin, G., Xu, C.K and Wang, J.Y*；Effects of Stress and Roughness on the Reflectivity of Blue Light in ZnS/MgF2 Multilayers；In Proceedings of the International Workshop on Materials, Chemistry and Engineering (IWMCE 2018), 478-485.；
[ 35 ] 王宇，余云鹏，张汉焱，林钢，徐从康，王江涌*；AZO单层和AZO/Cu/AZO复合层薄膜光电性能的研究；材料科学, 8 (2018) 664-676；
[ 36 ] 王宇，余云鹏，张汉焱，林钢，徐从康，王江涌*；AZO透明导电膜的光电性能研究；材料科学, 8 (2018) 401-411；
[ 37 ] 梁家伟，林晓琪，毕焰枫，冯朗丹，庄素娜，韩逸山，王江涌*；不同工作参数下Ni/Ag双层膜GDOES深度谱的比较；真空, 55（2018）5-9；
[ 38 ] 梁家伟，韩逸山，庄素娜，劳珏斌，林伟轩，简玮，王江涌*；辉光放电发射光谱在材料成分-深度分析中的应用；真空 54（2017）39-46.；
[ 39 ] 林炜轩，王江涌*；高度分布函数与自相关函数对表面粗糙度参数的影响；表面技术，46 (2017) 241-249；
[ 40 ] 连松友，姜国利，余云鹏，林舜辉，林 钢，徐从康，王江涌*；蓝光过滤多层功能薄膜的遗传算法设计；表面技术，46 (2017) 1-6；
[ 41 ] 崔东庆，简玮，余云鹏，林舜辉，王江涌*；铜镍诱导非晶硅晶化机制研究；功能材料，48 (2017) 11161-11167；
[ 42 ] 连松友，余云鹏，林舜辉，林 钢，徐从康，王江涌*；光学增透和增反多层膜的设计与计算；材料科学, 7 (2017) 78-87；
[ 43 ] 陈德锋，廖桂颖，王江涌；基于遗传算法的最速降线问题求解；力学研究(International Journal of Mechanics Research)，4 (2015) 76-88.；
[ 44 ] 表面与界面的偏析 （Surface and Interface segregation)；
[ 45 ] 陈煜，黄立豪，杨士栋，邹永恒，姜国利，王江涌*；钯-硅(Pd-Si)薄膜表面偏析研究；材料科学研究, 6 (2016) 334-345.；
[ 46 ] Guoli Jiang, Jiangyong Wang；Methods for Stress Measurement；Material Sciences (Chinese) 6 (2016) 11-25.；
[ 47 ] 李艳秀，林旻，蒋苏华，冼志科，邹永恒，王江涌*；表面偏析浓度非连续变化现象的定量解释；真空，51, （2014） 74-78；
[ 48 ] X.L. Yan, M. Lin, J.Y. Wang；Equilibrium and kinetic surface segregations in Cu–Sn thin films；Applied Physics A, 113 (2013) 423-430；
[ 49 ] Xinyi Li, Min Li, Xu Chen, Chi Huang, Yanxiu Li, Jiangyong Wang*；Influence of bulk concentration on the discontinuous transition in surface segregation；Advanced Materials Research 648 (2013) pp 35-42.；
[ 50 ] X.L. Yan, J.Y. Wang*；Size effects on surface segregation in Ni-Cu alloy thin flms；Thin Solid Films 529 (2013), pp. 483-487；
[ 51 ] Min Lin, Xu Chen, Xinyi Li, Chi Huang, Yanxiu Li, Jiangyong Wang*；Local equilibrium in the dissolution kinetics of Ag on Cu(111) surface；Advanced Materials Research 648 (2013) pp 43-49.；
[ 52 ] 颜心良，王江涌*；二元合金薄膜的表面偏析；真空 49, No.4, PP. 63-67, Jul. 2012.；
[ 53 ] JY Wang, J du Plessis*, JJ Terblans and GN van Wyk；The equilibrium surface segregation of silver to the low index surfaces of a copper single crystal；Surface & Interface Analysis 28 (1999) 73；
[ 54 ] JY Wang*；Equilibrium and kinetic surface segregation in binary alloy thin films；Applied Surface Science, 252 (2006) 5347；
[ 55 ] JY Wang, J du Plessis*, JJ Terblans and GN van Wyk；Kinetics near the discontinuous surface transition in the Cu(111)(Ag) binary segregating system；Surface Science, 423 (1999) 12；
[ 56 ] JY Wang, J du Plessis*, JJ Terblans and GN van Wyk；The Discontinuous surface transition in the Cu(111)(Ag) binary segregating system；Surface Science, 419 (1999) 197.；
[ 57 ] EC Viljoen, JY Wang, WJ Erasmus, JJ Terblans and J du Plessis*；Ordered monolayer overstructures formed on Cu surfaces through segregation；Materials Science Forum, 294 (1999) 457；
[ 58 ] 薄膜材料深度剖析的定量分析 (Quantitative sputter depth profiling in thin films)；
[ 59 ] 李炯，林炜轩，程鹤登，陈榕杰，王江涌*；非高斯高度分布函数构造的表面形貌的表征；表面技术，45 (2016) 205-212.；
[ 60 ] 林炜轩，王江涌*；高度分布函数与自相关函数对表面粗糙度参数的影响；表面技术，46 (2017) 241-249.；
[ 61 ] 康红利，劳珏斌，刘毅，王江涌*；SIMS溅射深度剖析的定量分析；真空, 52, No.1, PP. 1-6, 2015.；
[ 62 ] Yi Liu, Weixuan Lin, Weibing Ye, Huansheng Li, Jiong Li, Weihua Yu, and Jiangyong Wang*；Determination of the interface roughness between Ni-coated layer and Cu substrate by glow discharge optical emission spectroscopy depth profiling；Advanced Materials Research, 1094 (2015) 181-187；
[ 63 ] S. Hofmann, Y. Liu, J. Y. Wang, J. Kovac；Comparison of Analytical and Numerical Resolution Functions in Sputter Depth Profiling；Applied Surface Science, 314(2014) 942-955；
[ 64 ] 马春华，刘毅，黄云驰，程鹤登，韩逸山，朱星星，叶伟斌，王江涌*；规则表面形貌的表征；汕头大学学报（自然科学版）29 （2014）35-42.；
[ 65 ] Y. Liu, W. Jian, J.Y. Wang, S. Hofmann, J. Kovac；Influence of non-Gaussian roughness on sputter depth profiles；Applied Surface Science. 276 (2013) 447-453；
[ 66 ] W. Jian, Y. Liu, X.Y. Wang, S.P. Rao, S. Hofmann, J.Y. Wang；Quantification of AES depth profiling data of polycrystalline Al films with Gaussian and non-Gaussian surface height distribution；Surface and Interface Analysis, 45 (2013) 1148-1151；
[ 67 ] Xiaoyin Wang, Wei Jian, Yi Liu, Shaoping Rao, Xingxing Zhu, Yishan Han, Jiangyong Wang*；Determination of coated substrate roughness by quantification of measured depth profiles；Advanced Materials Research, 602-604 (2013) pp 1624-1629.；
[ 68 ] Shaoping Rao, Yi Liu, Xiaoyin Wang, Wei Jian, Jiangyong Wang*；Quantification of N2+ implanted AES depth profiling data in Al；Advanced Materials Research，602-604 (2013) pp 1808-1813.；
[ 69 ] 刘毅，王江涌*；择优溅射对深度剖析谱和深度分辨率的影响；真空 49, No.2, PP. 71-76, Mar. 2013.；
[ 70 ] Y. Liu, J.Y. Wang, S. Hofmann and J. Kovac；Quantification of the N2+ implanted AES depth profiles in Cobalt；Advanced Materials Research, 557-559 (2012) pp. 1653-1640.；
[ 71 ] J.Y. Wang, Y. Liu, S. Hofmann and J. Kovac；Influence of nonstationary atomic mixing on depth resolution in sputter depth profiling；Surface and Interface Analysis. 2012, 44, PP. 569-572；
[ 72 ] 刘毅，王江涌；溅射深度剖析的定量分析及其应用；真空 49, No.2, PP. 71-76, Mar. 2012.；
[ 73 ] JY Wang；Determination of Interdiffusion Coefficient in Nanolayered Structures by Auger Electron Spectroscopical SputterDepth Profiling；Advanced Materials Research，306-307 (2011) pp 1354-1359.；
[ 74 ] JY Wang*, U Starke and EJ Mittemeijer；Evaluation of the depth resolutions of AES, XPS, TOF-SIMS sputter depth profiling techniques；Thin Solid Films, 517 (2009) 3402；
[ 75 ] S. Hofmann and JY Wang* and A Zalar；Backscattering effect in quantitative AES sputter depth profiling of multilayers；Surface and Interface Analysis, 39 (2007) 787；
[ 76 ] S. Hofmann* and JY Wang；Implementing the electron backscattering factor in quantitative sputter depth profiling using AES；Surface and Interface Analysis, 39 (2007) 324；
[ 77 ] S. Hofmann* and JY Wang；AES depth profiling with a titled sample in front of a cylindrical mirror analyzer: quantification and profile shape changes according to an extension of the conventional MRI model；Surface and Interface Analysis, 39 (2007) 45；
[ 78 ] S. Hofmann* and JY Wang；The MRI-Model in sputter depth profiling: capabilities, limitations and recent progress；Journal of Surface Analysis, 13 (2006) 142；
[ 79 ] JY Wang*, A Zalar, and EJ Mittemeijer；Depth dependences of the ion bombardment induced roughness and of the interdiffusion coefficient for Si/Al multilayers；Applied Surface Science, 222 (2004) 171；
[ 80 ] JY Wang* and EJ Mittemeijer；A new method for the determination of the diffusion-induced concentration profile and the interdiffusion coefficient for thin solid film systems by Auger electron spectroscopical sputter depth profiling；Journal of Materials Research, 19 (2004) 681；
[ 81 ] JY Wang*, S. Hofmann, A Zalar and EJ Mittemeijer；Quantitative evaluation of sputtering induced surface roughness in depth profiling of polycrystalline multilayers using Auger electron spectroscopy；Thin Solid Films, 444 (2003) 120；
[ 82 ] JY Wang*, A Zalar, YH Zhao and EJ Mittemeijer；Determination of the interdiffusion coefficient for Si/Al multilayers by Auger electron spectroscopical sputter depth profiling；Thin Solid Films, 433 (2003) 92；
[ 83 ] S. Hofmann* and JY Wang；Progress in quantitative sputter depth profiling using the MRI-model；Journal of Surface Analysis, 10 (2003) 52；
[ 84 ] T Wagner*, JY Wang, and S Hofmann；Sputter Depth Profiling in AES and XPS, Chapter 22, in Surface Analysis by Auger and X-ray Photoelectron；Ed: D. Briggs and J. Grant, IM Publications, West Sussex, UK and SurfaceSpectra Limited, Manchester, UK, 2003, p.619；
[ 85 ] S. Hofmann* and JY Wang；Determination of the depth scale in sputter depth profiling；Journal of Surface Analysis, 9 (2002) 336；
[ 86 ] 薄膜中的扩散及相变 (Diffusion and phase transformation in thin films)；
[ 87 ] 林冰，戴钟保，高梦滢，王江涌*；薄膜中的扩散及应力模型；材料科学研究, 6 (2016) 413-431.；
[ 88 ] 蒋金春，简 玮，毛 婷，林文伟，邹永恒，罗以琳，王江涌*；可形成硅化物的金属诱导非晶硅晶化机制的研究；材料保护，48, PP. 139-144, 2015；
[ 89 ] 林 冰，黄 琳，简 玮，王江涌*；界面热力学在锡晶须生长研究中的应用；表面技术，44 (2015) 1-8；
[ 90 ] 简 玮，林 冰，黄 琳，王江涌*；薄膜材料中的界面热力学；材料科学研究，2(2013) 58-68；
[ 91 ] Lin Huang, Xuenian Lin, Renwu Chen and Jiangyong Wang*；Sn whisker growth in Cu (top)-Sn (bottom) bilayer system upon room temperature aging；Advanced Materials Research,785-786 (2013) 918-923.；
[ 92 ] 黄木香，杨琳，刘玉琪，王江涌*；非晶硅薄膜晶化过程的研究；真空 49, No.5, PP. 35-38, Sep. 2012.；
[ 93 ] 刘毅，黄木香，徐文武，陈仁武，魏少巍，王江涌*；铝诱导层交换的研究进展；汕头大学学报（自然科学版）2012, 27, No. 4, pp. 17-25.；
[ 94 ] Z.M. Wang, L. Gu, F. Phillipp, J.Y. Wang, L.P.H. Jeurgens, E.J. Mittemeijer；Metal-Catalyzed Growth of Semiconductor Nanostructures without Solubility and Diffusivity Constraints；Advanced Materials 23, 854-859 (2011).；
[ 95 ] Sobiech, M., C. Krüger, U. Welzel, J.Y. Wang, E.J. Mittemeijer and W. Hügel；Phase Formation at the Sn/Cu Interface during Room Temperature Aging: Microstructural Evolution, Whiskering, and Interface Thermodynamics；Journal of Materials Research 26, 1482-1493 (2011).；
[ 96 ] Sobiech, M., C. Krüger, U. Welzel, J.Y. Wang, E.J. Mittemeijer and W. Hügel；Evolution of Microstructure and Stress of and Associated Whisker Growth on Sn Layers Sputter-Deposited on Cu Substrates；Journal of Materials Research 25, 2166-2174 (2010).；
[ 97 ] ZM Wang, LPH Jeurgens, JY Wang and EJ Mittemeijer*；Advances in understanding metaled-induced crystallization of amorphous semiconductors；Advanced Engineering Materials, 11(2009)131；
[ 98 ] ZM Wang*, LPH Jeurgens, JY Wang, F. Phillipp and EJ Mittemeijer；High-resolution transmission-electron-microscopy study of ultrathin Al-induced crystallization of amorphous Si；Journal of Materials Research, 24 (2009) 3294；
[ 99 ] JY Wang*, ZM Wang, LPH Jeurgens and EJ Mittemeijer；Mechanisms of aluminum-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers；Journal of NanoScience and NanoTechnology, 9 (2009) 3364；
[ 100 ] ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；Origins of stress development during metal-induced crystallization and layer exchange: Annealing amorphous Ge/crystalline Al bilayers；Acta Materialia, 56 (2008) 5047；
[ 101 ] D He, JY Wang* and EJ Mittemeijer；Crystallite size and micro- and macro-strain changes during layer exchange upon annealing amorphous silicon/crystalline aluminum；Zeitschrift für Kristallographie, 27 (2008) 193；
[ 102 ] ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；Thermodynamics and mechanism of metal-induced crystallization in immiscible alloy systems；Physical Review B, 77 (2008) 045424；
[ 103 ] ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；Tailoring the ultrathin Al-induced crystallization temperature of amorphous Si by interface thermodynamics；Physical Review Letters, 100 (2008) 125503；
[ 104 ] ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；Investigation of metal-induced crystallization in amorphous Ge/crystalline Al bilayers by Auger microanalysis and selected-area depth profiling；Surface and Interface Analysis, 40 (2008) 427；
[ 105 ] JY Wang*, ZM Wang and EJ Mittemeijer；Mechanism of aluminium-induced layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers；Journal of Applied Physics, 102 (2007) 113523；
[ 106 ] ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；“Explosive”crystallization of amorphous germanium in Ge/Al layer systems; comparison with Si/Al layer systems；Scripta Materialia, 55 (2006) 987；
[ 107 ] JY Wang*, D He, A Zalar and EJ Mittemeijer；Interdiffusion in microstructurally different Si/Al multilayered structures；Surface and Interface Analysis, 38 (2006) 773；
[ 108 ] JY Wang*, D He, YH Zhao and EJ Mittemeijer；Origin of aluminium-induced crystallization of amorphous silicon；Applied Physics Letters, 88 (2006) 061910；
[ 109 ] D He, JY Wang* and EJ Mittemeijer；Origins of interdiffusion, crystallization and layer exchange in crystalline Al / amorphous Si layer systems；Applied Surface Science, 252 (2006) 5470；
[ 110 ] D He, JY Wang* and EJ Mittemeijer；Thermodynamic and kinetic criteria for layer exchange in amorphous silicon/crystalline aluminium bilayers during annealing；Scripta Materialia, 54 (2006) 559；
[ 111 ] D He, JY Wang* and EJ Mittemeijer；The initial stage of the reaction between amorphous Si and crystalline Al；Journal of Applied Physics, 97 (2005) 093524；
[ 112 ] D He, JY Wang* and EJ Mittemeijer；Reaction between amorphous Si and crystalline Al in Al/Si and Si/Al bilayers: microstructural and thermodynamic analysis of layer exchange；Applied Physics A, 80 (2005) 501；
[ 113 ] YH Zhao, JY Wang* and EJ Mittemeijer；Initial interaction of crystalline Al/amorphous Si bilayer during annealing；MRS Proceedings, 808 (2004) A4.23；
[ 114 ] YH Zhao, JY Wang* and EJ Mittemeijer；Microstructural changes in amorphous Si/crystalline Al thin bilayer films upon annealing；Applied Physics A, 79 (2004) 681；
[ 115 ] A Zalar*, JY Wang, YH Zhao, EJ Mittemeijer and P. Panjan；AES depth profiling of thermally treated Al/Si thin-film structures；Vacuum, 71 (2003) 11；
[ 116 ] YH Zhao, JY Wang* and EJ Mittemeijer；Interaction of amorphous Si and crystalline Al thin films during low-temperature annealing in vacuum；Thin Solid Films, 433 (2003) 82；
[ 117 ] 界面间的相互作用 (Interaction between interfaces)；
[ 118 ] BM Law*, A Mukhopadhyay, JR Henderson and JY Wang；Wetting of silicon wafers by n-alkanes；Langmuir, 19 (2003) 8380；
[ 119 ] JY Wang, S Betelu and BM Law*；Line tension approaching the wetting transition: experimental results from contact angle measurement；Physical Review E. 63 (2001) 031601；
[ 120 ] JY Wang, S Betelu and BM Law*；Line tension effects near first-order wetting transitions；Physical Review Letters, 83 (1999) 3677；
[ 121 ] JY Wang, M Crawley and BM Law*；Contact angle hysteresis near a first-order wetting transition；Langmuir, 17 (2001) 299；
[ 122 ] 原子结构的计算 (Atomic structure calculations)；
[ 123 ] JH Xi, LJ Wu, BW Li* and JY Wang；Hyperfine interaction in Sc atomic structure；Chinese Journal of Atomic and Molecular Physics, S1 (1990) 52；
[ 124 ] JY Wang*, FH Wang and QQ Gao；Exchange-correlation energy of the Be ground state；Chinese Journal of Atomic and Molecular Physics, 3 (1992) 2393；
[ 125 ] JH Xi, LJ Wu, BW Li* and JY Wang；Hyperfine interaction of the Sc ground state；Physics Letters A, 152 (1991) 401；
[ 126 ] JY Wang*, JH Xi, LJ Wu and BW Li；Exchange-correlation energies of beryllium and its isoelectronic sequence；Chinese Journal of Atomic and Molecular Physics, S1 (1990) 71；