高芳亮 特聘研究员


高芳亮 特聘研究员


高芳亮，工学博士，华南师范大学特聘研究员，分别在中南大学、暨南大学及华南理工大学获得学士、硕士及博士学位。主要从事III-V化合物半导体材料外延生长及其光电器件、能源方面应用研究，以第一/通讯作者在Small、Nanoscale、Appl. Phys. Lett.等期刊发表SCI论文13篇；申请国际PCT专利5件，其中获授权美国发明专利1件、新加坡发明专利1件；申请中国发明专利37件，其中获授权发明专利11件；研究成果获广东省技术进步二等奖、广东省技术发明二等奖等多项奖励。主持装备预研教育部联合基金、广东省自然科学基金、中国博士后基金等5项省部级项目。


联系方式：gaofl@m.scnu.edu.cn






2019-至今 华南师范大学 特聘研究员
2016.12-2018.12 华南理工大学 博士后




[1] Zhenzhu Xu, Shuguang Zhang, Jinghan Liang, Jing Lin, Yuefeng Yu, Runze Li, Fangliang Gao*, Guoqiang Li*, Surface passivation of InGaN nanorods using H3PO4 treatment for enhanced photoelectrochemical performance, JOURNAL OF POWER SOURCES, 419, 65-71, 2019
[2] Zhenzhu Xu, Shuguang Zhang, Fangliang Gao*, Lei Wen, Yuefeng Yu, Guoqiang Li*, Correlations among morphology, composition, and photoelectrochemical water splitting properties of InGaN nanorods grown by molecular beam epitaxy, NANOTECHNOLOGY, 29(47), 475603, 2018
[3] Fangliang Gao, Lei Wen, Zhenzhu Xu, Jinglei Han, Yuefeng Yu, Shuguang Zhang*, Guoqiang Li*, Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms, SMALL, 13(21), **, 2017
[4] Zhenzhu Xu, Yuefeng Yu, Jinglei Han, Lei Wen, Fangliang Gao*, Shuguang Zhang, Guoqiang Li*, The mechanism of indium-assisted growth of (In)GaN nanorods: eliminating nanorod coalescence by indium-enhanced atomic migration, NANOSCALE, 9(43), 16864-16870, 2017
[5] Fangliang Gao, Guoqiang Li*, Quality-enhanced In0.3Ga0.7As film grown on GaAs substrate with an ultrathin amorphous In0.6Ga0.4As buffer layer, APPLIED PHYSICS LETTERS, 104(4), 42104, 2014