Tongxing YANAssistant Researcher
email: yantx@sustech.edu.cn
Office：
Research Field：Quantum control and quantum simulation with superconducting qubits




Name： Tongxing Yan
Position：AssistantResearcher
Highest Degree：Ph.D
Telephone（office）：
Office：
Email：yantx@sustech.edu.cn
Research Field：Quantumcontrol and quantum simulation with superconducting qubits

Educational Background
2008.09-2012.07 Bachelor in Physics, School of Physics, PekingUniversity
2012.09-2017.07 Ph.D. in Physics, School of Physics, Peking University
Working Experience
2019.09-present, Assistant Researcher in Institute for Quantum Science and Engineering, SUSTech
2017.07-2019.08PostdoctoralResearcher in school of physics, SUSTech
2016.01-2016.12 visiting scholar in Instituteof Photonics, University of Strathclyde, UK
Papers
1, Tongxing Yan, Bao-Jie Liu, Kai Xu, Chao Song, Song Liu,Zhensheng Zhang, Hui Deng, Zhiguang Yan, Hao Rong, Keqiang Huang, Man-HongYung, Yuanzhen Chen, Dapeng Yu, “Experimental Realization of NonadiabaticShortcut to Non-Abelian Geometric Gates”, PhysicalReview Letters 122, 080501 (2019).
2, TongxingYan, Junchao Li, Jian Zhang, Mo Li, Xiaodong Hu, “Experimentally studyelectron overflow from quantum wells into p-side GaN and its effect on theefficiency droop in InGaN/GaN blue-light-emitting-diodes”, Superlattices and Microstructures 109, 117-122 (2017).
3, Tongxing Yan, Juan He, Wei Yang, Kamran Rajabi, WeihuaChen, Jiejun Wu, Xiangning Kang, Guoyi Zhang, Xiaodong Hu, “Optical propertiesof a novel parabolic quantum well structure in InGaN/GaN light emitters”, physica status solidi (A), 212,5(925-929), (2015).
4, Shuailong Zhang, Enyuan Xie, Tongxing Yan, Wei Yang, JohannesHerrnsdof, Zheng Gong, Ian M. Watson, Erdan Gu, Martin D. Dawson, and XiaodongHu, “Hole transport assisted by the piezoelectric field in In0.4Ga0.6N/GaNquantum wells under electrical injection”, Journalof Applied Physics 118, 125709 (2015). (first co-author)
5, Yang Yue, Ji Qingbin, Zong Hua, Yan Tongxing, Li Junchao, Wei Tiantian, Hu Xiaodong, “Designof a tandem distributed Bragg reflectors specialized for enhancing theefficiency of GaN-based ultraviolet light-emitting diodes”, Optics Communications, 374, pp 80-83,(2016).
6, Yang Wei, Ji Qingbin, Zong Hua, RajabiKamran, Yan Tongxing, Hu Xiaodong,“Theoretical Investigation of Loss-Compensating Hybrid Waveguide UsingQuasi-One-Dimensional Surface Plasmon for Green Nanolaser”, Plasmonics, 11(1), pp 159-165,( 2016).
7, Qingbin Ji, Lei Li, Wei Zhang, Jia Wang,Peichi Liu, Yahong Xie, Tongxing Yan ,Wei Yang, Weihua Chen, Xiaodong Hu, “Dislocation Reduction and StressRelaxation of GaN and InGaN Multiple Quantum Wells with Improved Performancevia Serpentine Channel Patterned Mask”, ACSAppl. Mater. Interfaces, 8, 21480?21489 (2016). O
8, Linghai Meng, Xiangning Kang, Ping Wang, Tongxing Yan,et al.” Polyimide-isolatedridge waveguide InGaN/GaN laser diodes based on back-ward exposure”, Superlattices and Microstructures, 91,313-318, (2016).
9, Kamran Rajabi, Wei Yang, Ding Li, Juan He,Hua Zong, Qingbin Ji, Bingran Shen, TongxinYan et al, “The Photoluminescence Properties of QWs with AsymmetricalStep-Like InGaN/GaN Quantum Barriers”, Superlatticesand Microstructures, 80, p 102-110 (2015).
10, Yang Wei, Zong Hua, Ji Qingbin, Yan Tongxing, Hu Xiaodong, “The designcriteria of hybrid waveguides using semiconductor gain to compensate the metalloss towards nano-scale lasers with high plasmonicity”, Applied Physics Letters, 105(3)(2014).