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发布人:院办 发布时间：2014-04-07 浏览次数：

苏少坚

硕士生导师
姓名：苏少坚

学历/学位：博士
职称/职务：讲师
所属部门：信息学院光电技术系
办公室：机电信息大楼B350室
联系方式：**

E-mail：sushaojian@hqu.edu.cn
【主要研究方向】
IV族新型光电材料与器件

【研究项目】

在研项目--目前在研经费（万元）：
1.新型硅基异质材料的生长与应用研究，校级，2012.12-2014.12——4万

【代表性论文】
(1)ShaojianSu,DongliangZhang,GuangzeZhang,ChunlaiXue,BuwenCheng,GrowthofGe1-xSnx/Gestrained-layersuperlatticesonSi(100)bymolecularbeamepitaxy,SuperlatticesandMicrostructrues,64:543-551,2013.
(2)ShaojianSu,GenquanHan,DongliangZhang,GuangzeZhang,ChunlaiXue,QimingWang,BuwenCheng,Strainedgermanium-tinpMOSFETfabricatedonasilicon-on-insulatorsubstratewithrelaxedGebuffer,ChinesePhysicsLetters,30(11):118501,2013.
(3)ShaojianSu,DongliangZhang,GuangzeZhang,ChunlaiXue,BuwenCheng,QimingWang,High-qualityGe1-xSnxalloysgrownonGe(001)substratesbymolecularbeamepitaxy,ActaPhysicaSinica,62(5):058101,2013.
(4)ShaojianSu,BuwenCheng,ChunlaiXue,DongliangZhang,GuangzeZhang,QimingWang,LatticeconstantdeviationfromVegard’slawinGeSnalloys,ActaPhysicaSinica,61(17):176104,2012.
(5)ShaojianSu,BuwenCheng,ChunlaiXue,WeiWang,QuanCao,HaiyunXue,WeixuanHu,GuangzeZhang,YuhuaZuo,QimingWang,GeSnp-i-nphotodetectorforalltelecommunicationbandsdetection,OpticsExpress,19(7):6400-6405,2011.
(6)ShaojianSu,WeiWang,BuwenCheng,GuangzeZhang,WeixuanHu,ChunlaiXue,YuhuaZuo,QimingWang,EpitaxialgrowthandthermalstabilityofGe1-xSnxalloysonGe-bufferedSi(001)substrates,JournalofCrystalGrowth,317(1):43-46,2011.
(7)ShaojianSu,WeiWang,BuwenCheng,GuangzeZhang,ChunlaiXue,YuhuaZuo,QimingWang,ThecontributionsofcompositionandstraintothephononshiftinGe1-xSnxalloys,SolidStateCommunications,151(8):647-650,2011.
(8)ShaojianSu,WeiWang,GuangzeZhang,WeixuanHu,AnqiBai,ChunlaiXue,YuhuaZuo,BewenCheng,QimingWang,EpitaxialgrowthofGe0.975Sn0.025alloyfilmsonSi(001)substratesbymolecularbeamepitaxy,ActaPhysicaSinica,60(2):028101,2011.
(9)ShaojianSu,BuwenCheng,DongliangZhang,GuangzeZhang,ChunlaiXue,QimingWang,GrowthofGe1-xSnxalloysusingcombinedsourcesofsolidtinandgaseousgermane,ECSTransactions(222ndElectrochemicalSocietyMeeting),50(9):903-906,Honolulu,Hawaii,2012.10.7-12.
(10)BuwenCheng,ShaojianSu,ChunlaiXue,GuangzeZhang,QimingWang,GengquanHan,LanxiangWang,WeiWang,Yee-ChiaYeo,Growthofhigh-qualityGeSnalloysforhigh-speedelectronicdevices,EuropeanMaterialsResearchSociety2012SpringMeeting,Symp.A,AdvancedSiliconMaterialsResearchforElectronicandPhotovoltaicApplicationsIII,Strasbourg,France,2012.05.14-18.
(11)ShaojianSu,ChunlaiXue,BuwenCheng,WeiWang,GuangzeZhang,YuhuaZuo,QimingWang,GeSnonSiphotodetectorsgrownbymolecularbeamepitaxy,8thIEEEInternationalConferenceonGroupIVPhotonics,pp.33-35,London,2011.
(12)XiaoGong,GenquanHan,ShaojianSu,RanCheng,PengfeiGuo,FanBai,YueYang,QianZhou,BinLiu,KianHuiGoh,GuangzeZhang,ChunlaiXue,BuwenCheng,Yee-ChiaYeo,Uniaxiallystrainedgermanium-tin(GeSn)Gate-All-AroundnanowirePFETSEnabledbyanoveltop-downnanowireformationtechnology,IEEESymposiumonVLSITechnology,Kyoto,JP,pp.T34-T35,2013.
(13)YueYang,ShaojianSu,PengfeiGuo,WeiWang,XiaoGong,LanxiangWang,KainLuLow,GuangzeZhang,ChunlaiXue,BuwenCheng,GenquanHan,Yee-ChiaYeo,Towardsdirectband-to-bandtunnelinginp-channeltunnelingfieldeffecttransistor(TFET):technologyenablementbygermanium-tin(GeSn),IEEEInternationalElectronDevicesMeeting(IEDM),SanFrancisco,CAUSA,Dec.10-12,pp.379-382,2012.
(14)GenquanHan,ShaojianSu,LanxiangWang,WeiWang,XiaoGong,YueYan,Ivana,PengfeiGuo,ChengGuo,GuangzeZhang,JishengPan,ZhengZhang,ChunlaiXue,BuwenCheng,Yee-ChiaYeo,Strainedgermanium-tin(GeSn)n-channelMOSFETsfeaturinglowtemperatureN+/PjunctionformationandGeSnO2interfaciallayer,IEEESymposiaonVLSITechnology,pp.97-98,12-14June,2012.
(15)XiaoGong,ShaojianSu,BinLiu,LanxiangWang,WeiWang,YueYang,EugeneKong,BuwenCheng,GenquanHan,Yee-ChiaYeo,TowardshighperformanceGe1-xSnxandIn0.7Ga0.3AsCMOS:anovelcommongatestackfeaturingsub-400℃Si2H6passivation,singleTaNmetalgate,andsub-1.3nmEOT,IEEESymposiaonVLSITechnology,pp.99-100,12-14June,2012.
(16)GenquanHan,ShaojianSu,ChunleiZhan,QianZhou,YueYang,LanxiangWang,PengfeiGuo,WeiWei,ChounPeiWong,ZeXiangShen,BuwenCheng,Yee-ChiaYeo,High-mobilitygermanium-tin(GeSn)p-channelMOSFETsfeaturingmetallicsource/drainandsub-370℃processmodules,IEEEInternationalElectronDevicesMeeting(IEDM),WashingtonDC,pp.402-404,2011.