话题: hydride更多
The fabrication of AlN by hydride vapor phase epitaxy
1.IntroductionAluminumnitride(AlN)isonewidebandgapsemiconductor(upto6.2eV)withhigh-electricalresistivity(approximately1010Ω·cm),highcoefficientofheatc ...中科院半导体研究所 本站小编 Free考研考试 2022-01-01Hydride vapor phase epitaxy for gallium nitride substrate
1.IntroductionGalliumnitride(GaN)hasmanynoticeablecharacteristics,suchasawidebandgapof3.4eV,ahighelectricbreakdownfieldof3.3×106V/cm,andahighelectrons ...中科院半导体研究所 本站小编 Free考研考试 2022-01-01