1.IntroductionInthepastfewdecades,thedevicescalingofSimetal–oxide–semiconductorfield-effecttransistors(MOSFETs),followingMoore’sLaw,drivesthefastdevel ...
中科院半导体研究所 本站小编 Free考研考试 2022-01-011.IntroductionDuetotherapiddevelopmentinrecentyears,indiumgalliumzincoxide(IGZO)thinfilmtransistors(TFTs)areexpectedtobethedominanttechnologyforthenex ...
中科院半导体研究所 本站小编 Free考研考试 2022-01-011.IntroductionThethresholdorflat-bandvoltageshift(ΔVthorΔVfb)iswidelyacceptedastheuniqueparametricevaluationofthelevelofnegativebiastemperatureinstabi ...
中科院半导体研究所 本站小编 Free考研考试 2022-01-01