姓名：冯春
所在系所：材料物理与化学系
职务：干部
职称：讲师
通信地址：北京科技大学
邮编：100083
办公地点：材料测试中心308室
电话：010-62333882
传真：
邮箱：fengchun@ustb.edu.cn
主要研究领域
目前，以项目负责人的身份承担两项国家自然科学基金项目、一项博士后面上项目、一项博士后特别资助项目以及一项清华大学开放基金项目，主要研究先进磁性薄膜材料及器件，包括：
（1）硬盘用的超高密度磁记录介质薄膜材料的研究，主要涉及高磁晶各向异性的垂直磁记录介质薄膜材料的制备、表征及性能调控；
（2）高灵敏度的磁性传感器用薄膜材料的研究，主要涉及地磁导航系统用方位传感器、硬盘用磁头材料（巨磁电阻薄膜材料）的制备、表征及功能化；
（3）高精度磁编码器用的磁鼓材料的研发，主要涉及高精度的磁鼓材料的制备、充磁及表征。
发表论文著作
2006年以来的代表性论文列表：
1.ChunFeng,HongjiaLi,DanWei,etal.MicromagneticanalysisofL10-FePt/Aunanocompositefilms,JournalofPhysicsD:AppliedPhysics2011,44:245001.
2.ChunFeng,XuezhenMei,MeiyinYang,etal.TuningperpendicularmagneticanisotropyandcoercivityofL10-FePtnanocompositefilmbyinterfacialmanipulation,JournalofAppliedPhysics,2011,109:063918.
3.ChunFeng,EnZhang,ChuanchuanXu,etal.MagneticpropertiesandmicrostructureofL10-FePt/AlNperpendicularnanocompositefilms,JournalofAppliedPhysics,2011,110:063910
4.ChunFeng,NingLi,ShuaiLi,etal.ManipulationofmagneticexchangeinteractioninSmCofilmswithhighthermalstabilitybycontrollingphasetransformation,AppliedPhysicsA:MaterialsScience&Processing,2011,DOI10.1007/s00339-011-6619-2.
5.C.Feng,S.G.Wang,M.Y.Yang,etal.TunablemagneticpropertiesbyinterfacialmanipulationofL10-FePtperpendicularultrathinfilmwithisland-likestructures,JournalofNanoscience&Nanotechnology,2011,Inpress.
6.ChunFeng,EnZhang,MeiyinYangetal.SynthesisofL10-FePtperpendicularfilmswithcontrollablecoercivityandintergranularexchangecouplingbyinterfacialmicrostructurecontrol,JournalofAppliedPhysics,2010,107:123911.
7.L.Ding,J.Teng,X.C.Wang,C.Feng,etal.Designedsynthesisofmaterialsforhigh-sensitivitygeomagneticsensors,AppliedPhysicsLetters,96,052515(2010).
8.LiuYang,FuYanqiang,JinChuanandFengChun,DiscrepancyofthemagneticbehaviorsandcrystallinestructureontheCo/FeMnandFeMn/CointerfaceswithultrathinPtspacer,RareMetals2010,29(5)473.
9.ChunFeng,Jing-YanZhang,JiaoTeng,etal.StudyofNiO/FeinterfacewithX-rayphotoelectronspectroscopy,InternationalJournalofMinerals,MetallurgyandMaterials,2010,17(6):777.
10.ChunFeng,QianZhan,BaoheLi,etal.Responseto“Commenton“MagneticpropertiesandmicrostructureofFePt/Aumutilayerswithhighperpendicularmagnetocrystallineanisotropy””.AppliedPhysicsLetters,2009,94:036102.
11.ChunFeng,BaoheLi,JiaoTeng,etal.InfluenceofantiferromagneticFeMnonmagneticpropertiesofperpendicularmagneticthinfilms,Thinsolidfilms,2009,517:2745.
12.L.Ding,J.Teng,Q.Zhan,ChunFeng,etal.EnhancementofthemagneticfeldsensitivityinAl2O3encapsulatedNiFewithanisotropicmagnetoresistance.AppliedPhysicsLetters,2009,94:162506.
13.ChunFeng,BaoheLi,JiaoTeng,etal.PreparationofL10-FePtfilmforperpendicularmagneticrecordingmediabyusingFePt/Aumutilayers,ActaPhysicsScience-ChinaEdition,2009,58(5):3503.
14.ChunFeng,QianZhan,BaoheLi,etal.MagneticpropertiesandmicrostructureofFePt/Aumutilayerswithhighperpendicularmagnetocrystallineanisotropy,AppliedPhysicsLetters,2008,93:152513.
15.ChunFeng,BaoheLi,YangLiu,etal.ImprovementofmagneticpropertyofL10-FePtfilmbyFePt/Aumutilayerstructure,JournalofAppliedPhysics,2008,103:023916.
16.ChunFeng,BaoheLi,GangHan,etal.InfluenceofBiunderlayeronthemagneticpropertiesofFexPt100-x(x=40～58)films,AppliedPhysicsA:MaterialsScience&Processing,2007,87:121.
17.ChunFeng,BaoheLi,GangHan,etal.Effectoftheunderlayer(Ag,TiorBi)onthemagneticpropertiesofFe/Ptmultilayerfilms,Thinsolidfilms2007,515:8009.
18.BaoheLi,ChunFeng,XinGao,etal.MagneticpropertiesandmicrostructureofFePt/BNnanocompositefilmswithperpendicularmagneticanisotropy,AppliedPhysicsLetters,2007,91:152502.
19.ChunFeng,BaoheLi,GangHan,etal.Low-temperatureorderingandenhancedcoercivityofL10-FePtthinfilmpromotedbyaBiunderlayer,AppliedPhysicsLetters,2006,88:232109.
20.BaoheLi,ChunFeng,TaoYang,etal.ApproachtoenhanceofcoercivityinperpendicularFePt/Agnanoparticlefilm,JournalofAppliedPhysics,2006,99:016102.
21.BaoheLi,ChunFeng,TaoYang,etal.EffectofcompositiononL10orderinginFePtandFePtCuthinfilms,JournalofPhysicsD:AppliedPhysics,2006,39:1018.
专利:
1．于广华，冯春，滕蛟等，用表面活化剂改善L10-FePt薄膜性能的方法，专利号：ZL200510012096.4
2．于广华，冯春，滕蛟等，一种提高金属磁性多层膜矫顽力的方法，专利申请号：200710176699.7
3．冯春，杨美音，于广华.一种电流直接驱动磁记录介质薄膜的原子有序的方法，专利申请号：201010216961.8
4．于广华，丁雷，滕蛟，李明华，冯春，一种制备超高灵敏度磁电阻薄膜的方法，专利号：ZL200910243307.3
5.黄浦加顺，于广华，冯春，一种高磁电阻值NiFe薄膜及其制备方法，申请号：201110124341.6
获得主要荣誉
1.2008年，获得第十二届“叶企孙实验物理奖”
2.2007年，获得“罕王特钢”特别奖学金
3.2011年，成为“中国材料研究学会”青年委员会理事
