清华大学学者发表论文列表_李洪涛

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1.Influence of point defects on optical properties of GaN-based materials by first principle study

Li, LS, Yu, JD, Hao, ZB, Wang, L, Wang, J, Han, YJ, Li, HT, Xiong, B, Sun, CZ, Luo, Y

COMPUTATIONAL MATERIALS SCIENCE[0927-0256], Published 2017, Volume 129, Pages 49-54

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影响因子: 2.086 找找相关文章 PlumX Metrics

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2.A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode

Wang, L, Meng, X, Song, JH, Kim, TS, Lim, SY, Hao, ZB, Luo, Y, Sun, CZ, Han, YJ, Xiong, B, Wang, J, Li, HT

CHINESE PHYSICS LETTERS[0256-307X], Published 2017, Volume 34, Issue 1,

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影响因子: 0.875 找找相关文章 PlumX Metrics

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3.Characteristics of hexagonal c-oriented titanium film as the template for GaN epitaxy on glass substrate by electron beam evaporation

Yu, JD, Wang, J, Lu, BY, Han, YJ, Luo, Y, Sun, CZ, Hao, ZB, Xiong, B, Wang, L, Li, HT

THIN SOLID FILMS[0040-6090], Published 2017, Volume 624, Pages 160-166

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影响因子: 1.761 找找相关文章 PlumX Metrics

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4.Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

Gong, KW, Sun, CZ, Xiong, B, Han, YJ, Hao, ZBA, Wang, J, Wang, L, Li, HT

AIP ADVANCES[2158-3226], Published 2017, Volume 7, Issue 1,

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影响因子: 1.444 找找相关文章 PlumX Metrics

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5.Aluminum nitride-on-sapphire platform for integrated high-Q microresonators

Liu, XW, Sun, CZ, Xiong, B, Wang, L, Wang, J, Han, YJ, Hao, ZBA, Li, HT, Luo, Y, Yan, JC, Wei, TB, Zhang, Y, Wang, JX

OPTICS EXPRESS[1094-4087], Published 2017, Volume 25, Issue 2, Pages 587-594

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影响因子: 3.148 找找相关文章 PlumX Metrics

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6.A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multiquantum-well structures

Xing, YC, Wang, L, Yang, D, Wang, ZL, Hao, ZB, Sun, CZ, Xiong, B, Luo, Y, Han, YJ, Wang, J, Li, HT

SCIENTIFIC REPORTS[2045-2322], Published 2017, Volume 7,

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影响因子: 5.228 找找相关文章 PlumX Metrics

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7.Manipulating the Band Bending of InGaN/GaN Quantum Dots in Nanowires by Surface Passivation

Wang, ZL, Hao, ZB, Yu, JD, Wu, C, Wang, L, Wang, J, Sun, CZ, Xiong, B, Han, YJ, Li, HT, Luo, Y

JOURNAL OF PHYSICAL CHEMISTRY C[1932-7447], Published 2017, Volume 121, Issue 11, Pages 6380-6385

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影响因子: 4.509 找找相关文章 PlumX Metrics

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8.Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors

Yu, JD, Hao, ZB, Li, LS, Wang, L, Luo, Y, Wang, J, Sun, CZ, Han, YJ, Xiong, B, Li, HT

AIP ADVANCES[2158-3226], Published 2017, Volume 7, Issue 3,

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影响因子: 1.444 找找相关文章 PlumX Metrics

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9.Ab Initio Calculation of Dielectric Function in Wurtzite GaN Based on Walter's Model

Zhu, ZW, Zheng, JY, Wang, L, Xiong, B, Sun, CZ, Hao, ZB, Luo, Y, Han, YJ, Wang, J, Li, HT

CHINESE PHYSICS LETTERS[0256-307X], Published 2017, Volume 34, Issue 3,

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影响因子: 0.875 找找相关文章 PlumX Metrics

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10.Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

Meng, X, Wang, L, Hao, ZB, Luo, Y, Sun, CZ, Han, YJ, Xiong, B, Wang, J, Li, HT

APPLIED PHYSICS LETTERS[0003-6951], Published 2016, Volume 108, Issue 1,

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WOS核心合集引用:6 影响因子: 3.142 找找相关文章 PlumX Metrics

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11.Ultrafast dual-drifting layer uni-traveling carrier photodiode with high saturation current

Li, J, Xiong, B, Luo, Y, Sun, CZ, Wang, J, Hao, ZB, Han, YJ, Wang, L, Li, HT

OPTICS EXPRESS[1094-4087], Published 2016, Volume 24, Issue 8, Pages 8420-8428

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影响因子: 3.148 找找相关文章 PlumX Metrics

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12.An InP-Based Mid-Wave Infrared Up-Converter Utilizing Cascade Carrier Transportation

Kang, JB, Wang, L, Hao, ZB, Wang, C, Xie, LL, Wang, L, Wang, J, Xiong, B, Sun, CZ, Han, YJ, Li, HT, Luo, Y

IEEE PHOTONICS TECHNOLOGY LETTERS[1041-1135], Published 2016, Volume 128, Issue 12, Pages 1371-1374

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WOS核心合集引用:1 影响因子: 1.945 找找相关文章 PlumX Metrics

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13.High-power, wide-bandwidth modified uni-traveling-carrier photodiodes with an optimized depletion region

Li, J, Xiong, B, Luo, Y, Sun, CZ, Hao, ZB, Wang, J, Han, YJ, Wang, L, Li, HT

APPLIED PHYSICS EXPRESS[1882-0778], Published 2016, Volume 9, Issue 5,

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影响因子: 2.265 找找相关文章 PlumX Metrics

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14.Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/InxO ohmic contacts with microstructure formed by annealing in oxygen

Luo, Y, Bai, YM, Han, YJ, Li, HT, Wang, L, Wang, J, Sun, CZ, Hao, ZB, Xiong, B

OPTICS EXPRESS[1094-4087], Published 2016, Volume 24, Issue 10, Pages A797-A809

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影响因子: 3.148 找找相关文章 PlumX Metrics

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15.Surface acoustic wave devices fabricated on epitaxial AlN film

Gao, JN, Hao, ZB, E, YX, Niu, L, Wang, L, Sun, CZ, Xiong, B, Han, YJ, Wang, J, Li, HT, Luo, Y

FUNCTIONAL MATERIALS LETTERS[1793-6047], Published 2016, Volume 9, Issue 2,

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影响因子: 1.333 找找相关文章 PlumX Metrics

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16.Influence of emission quantum wells on the efficiency of up-conversion infrared photodetectors

Kang, JB, Wang, L, Hao, ZB, Wang, C, Xie, LL, Luo, Y, Wang, L, Wang, J, Xiong, B, Sun, CZ, Han, YJ, Li, HT, Wang, L, Wang, WX, Chen, H

JOURNAL OF INFRARED AND MILLIMETER WAVES[1001-9014], Published 2016, Volume 35, Issue 3, Pages 281-286

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影响因子: 0.266 找找相关文章 PlumX Metrics

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17.Improvement on the efficiency of up-conversion infrared photodetectors using surface microstructure

Wang, C, Hao, ZB, Wang, L, Kang, JB, Xie, LL, Luo, Y, Wang, L, Wang, J, Xiong, B, Sun, CZ, Han, YJ, Li, HT, Wang, L, Wang, WX, Chen, H

ACTA PHYSICA SINICA[1000-3290], Published 2016, Volume 65, Issue 10,

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影响因子: 0.677 找找相关文章 PlumX Metrics

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18.Broadband tunable microwave photonic phase shifter with low RF power variation in a high-Q AlN microring

Liu, XW, Sun, CZ, Xiong, B, Wang, J, Wang, L, Han, YJ, Hao, ZB, Li, HT, Luo, Y, Yan, JC, Wei, TB, Zhang, Y, Wang, JX

OPTICS LETTERS[0146-9592], Published 2016, Volume 41, Issue 15, Pages 3599-3602

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WOS核心合集引用:1 影响因子: 3.04 找找相关文章 PlumX Metrics

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19.Model for Low-Temperature Growth of Gallium Nitride

Wu, C, Yu, JD, E, YX, Luo, Y, Hao, ZB, Wang, J, Wang, L, Sun, CZ, Xiong, B, Han, YJ, Li, HT

CRYSTAL GROWTH & DESIGN[1528-7483], Published 2016, Volume 16, Issue 9, Pages 5023-5029

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WOS核心合集引用:2 影响因子: 4.425 找找相关文章 PlumX Metrics

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20.Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure

Yu, JD, Wang, L, Yang, D, Zheng, JY, Xing, YC, Hao, ZB, Luo, Y, Sun, CZ, Han, YJ, Xiong, B, Wang, J, Li, HT

SCIENTIFIC REPORTS[2045-2322], Published 2016, Volume 6,

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影响因子: 5.228 找找相关文章 PlumX Metrics

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21.Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure

Zheng, JY, Wang, L, Yang, D, Yu, JD, Meng, X, Hao, ZB, Sun, CZ, Xiong, B, Luo, Y, Han, YJ, Wang, J, Li, HT, Li, M, Li, Q

SCIENTIFIC REPORTS[2045-2322], Published 2016, Volume 6,

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影响因子: 5.228 找找相关文章 PlumX Metrics

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22.Dislocation analysis of InGaN/GaN quantum dots grown by metal organic chemical vapor deposition

Yang, D, Wang, L, Hao, ZB, Luo, Y, Sun, CZ, Han, YJ, Xiong, B, Wang, J, Li, HT

SUPERLATTICES AND MICROSTRUCTURES[0749-6036], Published 2016, Volume 99, Pages 221-225

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影响因子: 2.117 找找相关文章 PlumX Metrics

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23.Design of high-compactness freeform optical surfaces via energy accumulating optimization

Wang, K, Han, YJ, Li, HT, Luo, Y, Sun, CZ, Hao, ZB, Xiong, B, Wang, J, Wang, L

OPTICS EXPRESS[1094-4087], Published 2016, Volume 24, Issue 26, Pages A1489-A1504

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影响因子: 3.148 找找相关文章 PlumX Metrics

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24.量子级联波长上转换系统红外响应特性研究

罗毅,郝智彪,王磊,康健彬,汪莱,熊兵,孙长征,王健,韩彦军,李洪涛,王禄,王文新,陈弘

红外与激光工程[1007-2276], Published 2016, Issue 01, Pages 26-31

收录情况： CNKI

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25.柔性环境应变对InGaAsP量子阱材料增益的影响

欧春晖,罗毅,王健,孙长征,韩彦军,熊兵,郝智彪,汪莱,李洪涛

中国科学:物理学力学天文学[1674-7275], Published 2016, Issue 04, Pages 91-96

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26.利用表面微结构提高波长上转换红外探测器效率

王超,郝智彪,王磊,康健彬,谢莉莉,罗毅,汪莱,王健,熊兵,孙长征,韩彦军,李洪涛,王禄,王文新,陈弘

物理学报[1000-3290], Published 2016, Issue 10, Pages 323-328

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影响因子: 0.677 找找相关文章

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27.发光量子阱对波长上转换红外探测器效率的影响

康健彬,王磊,郝智彪,王超,谢莉莉,罗毅,汪莱,王健,熊兵,孙长征,韩彦军,李洪涛,王禄,王文新,陈弘

红外与毫米波学报[1001-9014], Published 2016, Issue 03, Pages 281-286

收录情况： CNKI

影响因子: 0.266 找找相关文章

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28.Growth of light-emitting devices based on InGaN quantum dots by MOVPE

Wang, Lai, Yang, Di, Yu, Jiadong, Hao, Zhibiao, Luo, Yi, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Wang, Jian, Li, Hongtao

2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Published 2016, Volume 1,

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29.Laser annealing of SiO film deposited by ICPECVD for fabrication of silicon based low loss waveguide

Wang, Ya’nan, Luo, Yi, Sun, Changzheng, Xiong, Bing, Wang, Jian, Hao, Zhibiao, Han, Yanjun, Wang, Lai, Li, Hongtao

Frontiers of Optoelectronics[2095-2759], Published 2016, Volume 9, Issue 2, Pages 323-329

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30.Simple dynamic energy core equivalent rays method to design freeform surface for extended source

Wang, Kun, Han, Yanjun, Li, Hongtao, Luo, Yi, Hao, Zhibiao, Wang, Lai, Sun, Changzheng, Xiong, Bing, Wang, Jian

Frontiers of Optoelectronics[2095-2759], Published 2016, Volume 9, Issue 2, Pages 330-337

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31.Study of response characteristics for cascade infrared up-conversion system

Luo, Yi, Hao, Zhibiao, Wang, Lei, Kang, Jianbin, Wang, Lai, Xiong, Bing, Sun, Changzheng, Wang, Jian, Han, Yanjun, Li, Hongtao, Wang, Lu, Wang, Wenxin, Chen, Hong

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering[1007-2276], Published 2016, Volume 45, Issue 1,

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32.The effects of external strain on the gain of InGaAsP quantum well

Ou, Chunhui, Luo, Yi, Wang, Jian, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Hao, Zhibiao, Wang, Lai, Li, Hongtao

Scientia Sinica: Physica, Mechanica et Astronomica[1674-7275], Published 2016, Volume 46, Issue 4,

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33.A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Zheng, Jiyuan, Wang, Lai, Wu, Xingzhao, Hao, Zhibiao, Sun, Changzheng, Xiong, Bing, Luo, Yi, Han, Yanjun, Wang, Jian, Li, Hongtao, Brault, Julien, Matta, Samuel, Khalfioui, Mohamed Al, Yan, Jianchang, Wei, Tongbo, Zhang, Yun, Wang, Junxi

Applied Physics Letters[0003-6951], Published 2016, Volume 109, Issue 24,

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影响因子: 3.142 找找相关文章 PlumX Metrics

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34.Polar-grids based source-target mapping construction method for designing freeform illumination system for a lighting target with arbitrary shape

Mao, Xianglong,Li, Hongtao,Han, Yanjun,Luo, Yi

Optics Express, Published 2015, Volume 23, Issue 4, Pages 4313-4328

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35.InGaN蓝光LED内量子效率的评测

汪莱,邢雨辰,郝智彪,罗毅,孙长征,韩彦军,熊兵,王健,李洪涛

中国科学:物理学力学天文学[1674-7275], Published 2015, Issue 06, Pages 57-63

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36.微型化原子磁力仪灵敏度上限的原子气室尺寸依赖性分析

王皓,熊兵,郝智彪,罗毅,齐京,孙长征,汪莱,王健,韩彦军,李洪涛

真空[1002-0322], Published 2015, Issue 04, Pages 78-82

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37.红外波长上转换器件中载流子阻挡结构的研究

康健彬,郝智彪,王磊,刘志林,罗毅,汪莱,王健,熊兵,孙长征,韩彦军,李洪涛,王禄,王文新,陈弘

物理学报[1000-3290], Published 2015, Issue 17, Pages 406-413

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影响因子: 0.677 找找相关文章 PlumX Metrics

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38.A two-step design method for high compact rotationally symmetric optical system for led surface light source

Mao, Xianglong,Li, Hongtao,Han, Yanjun,Luo, Yi

Optics Express, Published 2014, Volume 22, Issue SUPPL. 2, Pages A233-A247

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39.Two-step design method for highly compact three-dimensional freeform optical system for LED surface light source

Mao, Xianglong,Li, Hongtao,Han, Yanjun,Luo, Yi

Optics Express, Published 2014, Volume 22, Issue 21, Pages A1491-A1506

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40.集成封装发光二极管光提取效率的计算及优化

白一鸣,罗毅,韩彦军,李洪涛

光学精密工程[1004-924X], Published 2014, Issue 05, Pages 23-31

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41.Overlapping-based optical freeform surface construction for extended lighting source

Wang, Kun,Han, Yanjun,Li, Hongtao,Luo, Yi

Optics Express, Published 2013, Volume 21, Issue 17, Pages 19750-19761

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42.Wavelength dependence of colorimetric properties of lighting sources based on multicolor LEDs

Li, Hongtao,Mao, Xianglong,Han, Yanjun,Luo, Yi

Optics Express, Published 2013, Volume 21, Issue 3, Pages 3775-3783

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43.基于烟囱效应的集成封装半导体照明光源散热结构优化设计

张国旺,韩彦军,罗毅,李洪涛

半导体光电[1001-5868], Published 2013, Issue 05, Pages 17-22

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44.High-concentration solar concentrator with uniform irradiation

Zeng, Fei,Li, Hongtao,Hao, Zhibiao,Han, Yanjun,Luo, Yi

Taiyangneng Xuebao/Acta Energiae Solaris Sinica[0254-0096], Published 2012, Volume 33, Issue 2, Pages 338-342

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45.具有均匀照度的高倍太阳能聚光器

曾飞,李洪涛,郝智彪,韩彦军,罗毅

太阳能学报[0254-0096], Published 2012, Issue 02, Pages 164-168

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46.Combined feedback method for designing a free-form optical system with complicated illumination patterns for an extended LED source

Situ, Wenchang,Han, Yanjun,Li, Hongtao,Luo, Yi,Luo, Yi

Optics Express, Published 2011, Volume 19, Issue 19, Pages A1022-A1030

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47.Optics in solid state lighting

Luo, Yi,Luo, Yi,Feng, Zexin,Han, Yanjun,Li, Hongtao,Qian, Keyuan

Guangxue Xuebao/Acta Optica Sinica[0253-2239], Published 2011, Volume 31, Issue 9, Pages 0900117-1-0900117-11

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48.LED产业投资热点分析

李洪涛,韩彦军,罗毅

中国科技投资[1673-5811], Published 2011, Issue 03, Pages 38-40

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49.面向半导体照明的光学

罗毅,冯泽心,韩彦军,李洪涛,钱可元

光学学报[0253-2239], Published 2011, Issue 09, Pages 155-165

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50.自由表面光学系统对白光LED色温角分布的影响

司徒文畅,韩彦军,冯泽心,李洪涛,罗毅

半导体光电[1001-5868], Published 2011, Issue 06, Pages 33-36

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51.Design of compact and smooth free-form optical system with uniform illuminance for LED source

Luo, Yi,Luo, Yi,Feng, Zexin,Han, Yanjun,Li, Hongtao

Optics Express, Published 2010, Volume 18, Issue 9, Pages 9055-9063

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52.Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility

Ren Fan,Hao Zhi-Biao,Wang Lei,Wang Lai,Li Hong-Tao,Luo Yi

CHINESE PHYSICS B[1674-1056], Published 2010, Volume 19, Issue 1, Pages -

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WOS核心合集引用:6 影响因子: 1.436 找找相关文章

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53.基于由照射目标向光源映射和微带表面构型的分离变量三维自由曲面非成像光学系统设计

韩彦军,张贤鹏,冯泽心,钱可元,李洪涛,罗毅,李旭亮,黄冠志,祝炳忠

中国科技论文在线[1673-7180], Published 2010, Issue 01, Pages 39-44

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54.Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy

Jiang Yang,Luo Yi,Xi Guang-Yi,Wang Lai,Li Hong-Tao,Zhao Wei,Han Yan-Jun

ACTA PHYSICA SINICA[1000-3290], Published 2009, Volume 58, Issue 10, Pages 7282-7287

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WOS核心合集引用:3 影响因子: 0.677 找找相关文章

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55.Influence of pillar- and hole- patterned sapphire substrates on MOVPE grown GaN bulk and LED structures

Jiang Yang,Luo Yi,Wang Lai,Li Hong-Tao,Xi Guang-Yi,Zhao Wei,Han Yan-Jun

ACTA PHYSICA SINICA[1000-3290], Published 2009, Volume 58, Issue 5, Pages 3468-3473

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WOS核心合集引用:4 影响因子: 0.677 找找相关文章

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56.柱状与孔状图形衬底对MOVPE生长GaN体材料及LED器件的影响

江洋,罗毅,汪莱,李洪涛,席光义,赵维,韩彦军

物理学报[1000-3290], Published 2009, Issue 05, Pages 604-609

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影响因子: 0.677 找找相关文章

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57.AlGaN插入层对6H-SiC上金属有机物气相外延生长的GaN薄膜残余应力及表面形貌的影响

江洋,罗毅,席光义,汪莱,李洪涛,赵维,韩彦军

物理学报[1000-3290], Published 2009, Issue 10, Pages 612-617

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58.Dependence of GaN film sheet resistance on the N-2 carrier gas percentage

Xi Guang-Yi,Hao Zhi-Biao,Wang Lai,Li Hong-Tao,Jiang Yang,Zhao Wei,Ren Fan,Han Yan-Jun,Sun Chang-Zheng,Luo Yi

ACTA PHYSICA SINICA[1000-3290], Published 2008, Volume 57, Issue 11, Pages 7233-7237

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59.Determination of the mosaic structure of GaN films by high resolution X-ray diffraction

Li, Hongtao,Luo, Yi,Wang, Lai,Xi, Guangi,Jiang, Yang,Zhao, Wei,Han, Yanjun

2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications, Published 2008, Pages 141-142

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60.Determination of the twist angle of GaN film by high resolution X-ray diffraction

Li, Hongtao,Luo, Yi,Wang, Lai,Xi, Guangyi,Jiang, Yang,Zhao, Wei,Han, Yanjun

APPLIED PHYSICS EXPRESS[1882-0778], Published 2008, Volume 1, Issue 4, Pages -

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61.Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes

Wang, Lai,Li, Hongtao,Xi, Guangyi,Jiang, Yang,Zhao, Wei,Han, Yanjun,Luo, Yi

JAPANESE JOURNAL OF APPLIED PHYSICS[0021-4922], Published 2008, Volume 47, Issue 9, Pages 7101-7103

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62.Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Luo, Yi,Wang, Lai,Li, Hongtao,Han, Yanjun,Sun, Changzheng,Hao, Zhibiao

2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC), VOLS 1 AND 2, Published 2008, Pages 75-81

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63.Growth of III-nitride materials and blue light-emitting diodes by metal organic vapor phase epitaxy

Luo, Yi,Wang, Lai,Li, Hongtao,Han, Yanjun,Sun, Changzheng,Hao, Zhibiao

2008 IEEE PhotonicsGlobal at Singapore, IPGC 2008, Published 2008,

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64.Improvement of thick InGaN template by thin InGaN buffer grown at low temperature

Zhao, Wei,Wang, Lai,Xi, Guangyi,Li, Hongtao,Jiang, Yang,Han, Yanjun,Luo, Yi

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65.Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs

Xi Guang-Yi,Ren Fan,Hao Zhi-Biao,Wang Lai,Li Hong-Tao,Jiang Yang,Zhao Wei,Han Yan-Jun,Luo Yi

ACTA PHYSICA SINICA[1000-3290], Published 2008, Volume 57, Issue 11, Pages 7238-7243

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66.Influence of Si-doping in the barriers on optical and electrical properties of InGaN/GaN MQW LEDs

Wang, Lai,Luo, Yi,Han, Yanjun,Li, Hongtao,Xi, Guangyi,Jiang, Yang,Zhao, Wei

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67.Splitting of valance subbands in the wurtzite c -plane InGaN/GaN quantum well structure

Song, Yu,Chen, Dong,Wang, Lai,Li, Hongtao,Xi, Guangyi,Jiang, Yang

Applied Physics Letters[0003-6951], Published 2008, Volume 93, Issue 16,

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68.Splitting of valance subbands in the wurtzite c-plane InGaN/GaN quantum well structure

Song, Yu,Chen, Dong,Wang, Lai,Li, Hongtao,Xi, Guangyi,Jiang, Yang

APPLIED PHYSICS LETTERS[0003-6951], Published 2008, Volume 93, Issue 16, Pages -

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69.Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

Wang Lai,Zhang Xian-Peng,Xi Guang-Yi,Zhao Wei,Li Hong-Tao,Jiang Yang,Han Yan-Jun,Luo Yi

ACTA PHYSICA SINICA[1000-3290], Published 2008, Volume 57, Issue 9, Pages 5923-5927

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70.Study on injection efficiency in InGaN/GaN multiple quantum wells blue light emitting diodes

Wang, Lai,Wang, Jiaxing,Li, Hongtao,Xi, Guangyi,Jiang, Yang,Zhao, Wei,Han, Yanjun,Luo, Yi

APPLIED PHYSICS EXPRESS[1882-0778], Published 2008, Volume 1, Issue 2, Pages -

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WOS核心合集引用:18 影响因子: 2.265 找找相关文章 PlumX Metrics

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71.Thickness measurement of GaN films by X-ray diffraction

Li Hong-Tao,Luo Yi,Xi Guang-Yi,Wang Lai,Jiang Yang,Zhao Wei,Han Yan-Jun,Hao Zhi-Biao,Sun Chang-Zheng

ACTA PHYSICA SINICA[1000-3290], Published 2008, Volume 57, Issue 11, Pages 7119-7125

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72.基于图形衬底生长的GaN位错机制分析

江洋,罗毅,薛小琳,汪莱,李洪涛,席光义,赵维,韩彦军

光电子.激光[1005-0086], Published 2008, Issue 04, Pages 56-59

收录情况： CNKI

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73.MOVPE低温生长的n型GaN电学特性研究

汪莱,张贤鹏,席光义,赵维,李洪涛,江洋,韩彦军,罗毅

物理学报[1000-3290], Published 2008, Issue 09, Pages 569-573

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74.基于X射线衍射的GaN薄膜厚度的精确测量

李洪涛,罗毅,席光义,汪莱,江洋,赵维,韩彦军,郝智彪,孙长征

物理学报[1000-3290], Published 2008, Issue 11, Pages 437-443

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75.非故意掺杂GaN薄膜方块电阻与载气中N_2比例关系研究

席光义,郝智彪,汪莱,李洪涛,江洋,赵维,任凡,韩彦军,孙长征,罗毅

物理学报[1000-3290], Published 2008, Issue 11, Pages 551-555

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76.AlGaN表面坑状缺陷及GaN缓冲层位错缺陷对AlGaN/GaN HEMT电流崩塌效应的影响

席光义,任凡,郝智彪,汪莱,李洪涛,江洋,赵维,韩彦军,罗毅

物理学报[1000-3290], Published 2008, Issue 11, Pages 556-561

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77.Enhancement of electron-longitudinal optical phonon coupling in highly strained InGaN/GaN quantum well structures

Chen, Dong,Luo, Yi,Wang, Lai,Li, Hongtao,Xi, Guangyi,Jiang, Yang,Hao, Zhibiao,Sun, Changzheng,Han, Yanjun

JOURNAL OF APPLIED PHYSICS[0021-8979], Published 2007, Volume 101, Issue 5, Pages -

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78.Microstructure evolution in metal-organic vapor phase epitaxy-grown GaN with different low-temperature buffer layer annealing time

Li, Hongtao,Luo, Yi,Wang, Lai,Xi, Guangyi,Jiang, Yang,Zhao, Wei,Han, Yanjun

2007 International Nano-Optelectronics Workshop, iNOW, Published 2007, Pages 106-107

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79.Improved surface characteristics and contact performance of epitaxial p-AlGaN by a chemical treatment process

Shao, JP,Han, YJ,Wang, L,Jiang, Y,Xi, GY,Li, HT,Zhao, W,Luo, Y

CHINESE PHYSICS LETTERS[0256-307X], Published 2006, Volume 23, Issue 2, Pages 432-435

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WOS核心合集引用:2 影响因子: 0.875 找找相关文章