清华大学学者发表论文列表_汪莱

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1.Influence of point defects on optical properties of GaN-based materials by first principle study

Li, LS, Yu, JD, Hao, ZB, Wang, L, Wang, J, Han, YJ, Li, HT, Xiong, B, Sun, CZ, Luo, Y

COMPUTATIONAL MATERIALS SCIENCE[0927-0256], Published 2017, Volume 129, Pages 49-54

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影响因子: 2.086 找找相关文章 PlumX Metrics

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2.A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode

Wang, L, Meng, X, Song, JH, Kim, TS, Lim, SY, Hao, ZB, Luo, Y, Sun, CZ, Han, YJ, Xiong, B, Wang, J, Li, HT

CHINESE PHYSICS LETTERS[0256-307X], Published 2017, Volume 34, Issue 1,

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影响因子: 0.875 找找相关文章 PlumX Metrics

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3.Characteristics of hexagonal c-oriented titanium film as the template for GaN epitaxy on glass substrate by electron beam evaporation

Yu, JD, Wang, J, Lu, BY, Han, YJ, Luo, Y, Sun, CZ, Hao, ZB, Xiong, B, Wang, L, Li, HT

THIN SOLID FILMS[0040-6090], Published 2017, Volume 624, Pages 160-166

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影响因子: 1.761 找找相关文章 PlumX Metrics

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4.Oxides formation on hydrophilic bonding interface in plasma-assisted InP/Al2O3/SOI direct wafer bonding

Gong, KW, Sun, CZ, Xiong, B, Han, YJ, Hao, ZBA, Wang, J, Wang, L, Li, HT

AIP ADVANCES[2158-3226], Published 2017, Volume 7, Issue 1,

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影响因子: 1.444 找找相关文章 PlumX Metrics

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5.Studies on the nucleation of MBE grown III-nitride nanowires on Si

Yanxiong, E, Hao, ZB, Yu, JD, Wu, C, Wang, L, Xiong, B, Wang, J, Han, YJ, Sun, CZ, Luo, Y

CHINESE PHYSICS B[1674-1056], Published 2017, Volume 26, Issue 1,

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影响因子: 1.436 找找相关文章 PlumX Metrics

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6.Aluminum nitride-on-sapphire platform for integrated high-Q microresonators

Liu, XW, Sun, CZ, Xiong, B, Wang, L, Wang, J, Han, YJ, Hao, ZBA, Li, HT, Luo, Y, Yan, JC, Wei, TB, Zhang, Y, Wang, JX

OPTICS EXPRESS[1094-4087], Published 2017, Volume 25, Issue 2, Pages 587-594

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影响因子: 3.148 找找相关文章 PlumX Metrics

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7.A novel model on time-resolved photoluminescence measurements of polar InGaN/GaN multiquantum-well structures

Xing, YC, Wang, L, Yang, D, Wang, ZL, Hao, ZB, Sun, CZ, Xiong, B, Luo, Y, Han, YJ, Wang, J, Li, HT

SCIENTIFIC REPORTS[2045-2322], Published 2017, Volume 7,

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影响因子: 5.228 找找相关文章 PlumX Metrics

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8.Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors

Yu, JD, Hao, ZB, Li, LS, Wang, L, Luo, Y, Wang, J, Sun, CZ, Han, YJ, Xiong, B, Li, HT

AIP ADVANCES[2158-3226], Published 2017, Volume 7, Issue 3,

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影响因子: 1.444 找找相关文章 PlumX Metrics

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9.Ab Initio Calculation of Dielectric Function in Wurtzite GaN Based on Walter's Model

Zhu, ZW, Zheng, JY, Wang, L, Xiong, B, Sun, CZ, Hao, ZB, Luo, Y, Han, YJ, Wang, J, Li, HT

CHINESE PHYSICS LETTERS[0256-307X], Published 2017, Volume 34, Issue 3,

收录情况： WOS

影响因子: 0.875 找找相关文章 PlumX Metrics

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10.Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

Meng, X, Wang, L, Hao, ZB, Luo, Y, Sun, CZ, Han, YJ, Xiong, B, Wang, J, Li, HT

APPLIED PHYSICS LETTERS[0003-6951], Published 2016, Volume 108, Issue 1,

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WOS核心合集引用:6 影响因子: 3.142 找找相关文章 PlumX Metrics

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11.Ultrafast dual-drifting layer uni-traveling carrier photodiode with high saturation current

Li, J, Xiong, B, Luo, Y, Sun, CZ, Wang, J, Hao, ZB, Han, YJ, Wang, L, Li, HT

OPTICS EXPRESS[1094-4087], Published 2016, Volume 24, Issue 8, Pages 8420-8428

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影响因子: 3.148 找找相关文章 PlumX Metrics

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12.An InP-Based Mid-Wave Infrared Up-Converter Utilizing Cascade Carrier Transportation

Kang, JB, Wang, L, Hao, ZB, Wang, C, Xie, LL, Wang, L, Wang, J, Xiong, B, Sun, CZ, Han, YJ, Li, HT, Luo, Y

IEEE PHOTONICS TECHNOLOGY LETTERS[1041-1135], Published 2016, Volume 128, Issue 12, Pages 1371-1374

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WOS核心合集引用:1 影响因子: 1.945 找找相关文章 PlumX Metrics

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13.High-power, wide-bandwidth modified uni-traveling-carrier photodiodes with an optimized depletion region

Li, J, Xiong, B, Luo, Y, Sun, CZ, Hao, ZB, Wang, J, Han, YJ, Wang, L, Li, HT

APPLIED PHYSICS EXPRESS[1882-0778], Published 2016, Volume 9, Issue 5,

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影响因子: 2.265 找找相关文章 PlumX Metrics

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14.Light extraction efficiency enhancement of GaN-based blue LEDs based on ITO/InxO ohmic contacts with microstructure formed by annealing in oxygen

Luo, Y, Bai, YM, Han, YJ, Li, HT, Wang, L, Wang, J, Sun, CZ, Hao, ZB, Xiong, B

OPTICS EXPRESS[1094-4087], Published 2016, Volume 24, Issue 10, Pages A797-A809

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影响因子: 3.148 找找相关文章 PlumX Metrics

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15.Surface acoustic wave devices fabricated on epitaxial AlN film

Gao, JN, Hao, ZB, E, YX, Niu, L, Wang, L, Sun, CZ, Xiong, B, Han, YJ, Wang, J, Li, HT, Luo, Y

FUNCTIONAL MATERIALS LETTERS[1793-6047], Published 2016, Volume 9, Issue 2,

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影响因子: 1.333 找找相关文章 PlumX Metrics

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16.Influence of emission quantum wells on the efficiency of up-conversion infrared photodetectors

Kang, JB, Wang, L, Hao, ZB, Wang, C, Xie, LL, Luo, Y, Wang, L, Wang, J, Xiong, B, Sun, CZ, Han, YJ, Li, HT, Wang, L, Wang, WX, Chen, H

JOURNAL OF INFRARED AND MILLIMETER WAVES[1001-9014], Published 2016, Volume 35, Issue 3, Pages 281-286

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影响因子: 0.266 找找相关文章 PlumX Metrics

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17.Improvement on the efficiency of up-conversion infrared photodetectors using surface microstructure

Wang, C, Hao, ZB, Wang, L, Kang, JB, Xie, LL, Luo, Y, Wang, L, Wang, J, Xiong, B, Sun, CZ, Han, YJ, Li, HT, Wang, L, Wang, WX, Chen, H

ACTA PHYSICA SINICA[1000-3290], Published 2016, Volume 65, Issue 10,

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影响因子: 0.677 找找相关文章 PlumX Metrics

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18.Broadband tunable microwave photonic phase shifter with low RF power variation in a high-Q AlN microring

Liu, XW, Sun, CZ, Xiong, B, Wang, J, Wang, L, Han, YJ, Hao, ZB, Li, HT, Luo, Y, Yan, JC, Wei, TB, Zhang, Y, Wang, JX

OPTICS LETTERS[0146-9592], Published 2016, Volume 41, Issue 15, Pages 3599-3602

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WOS核心合集引用:1 影响因子: 3.04 找找相关文章 PlumX Metrics

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19.Model for Low-Temperature Growth of Gallium Nitride

Wu, C, Yu, JD, E, YX, Luo, Y, Hao, ZB, Wang, J, Wang, L, Sun, CZ, Xiong, B, Han, YJ, Li, HT

CRYSTAL GROWTH & DESIGN[1528-7483], Published 2016, Volume 16, Issue 9, Pages 5023-5029

收录情况： WOS SCOPUS

WOS核心合集引用:2 影响因子: 4.425 找找相关文章 PlumX Metrics

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20.Study on spin and optical polarization in a coupled InGaN/GaN quantum well and quantum dots structure

Yu, JD, Wang, L, Yang, D, Zheng, JY, Xing, YC, Hao, ZB, Luo, Y, Sun, CZ, Han, YJ, Xiong, B, Wang, J, Li, HT

SCIENTIFIC REPORTS[2045-2322], Published 2016, Volume 6,

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影响因子: 5.228 找找相关文章 PlumX Metrics

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21.Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure

Zheng, JY, Wang, L, Yang, D, Yu, JD, Meng, X, Hao, ZB, Sun, CZ, Xiong, B, Luo, Y, Han, YJ, Wang, J, Li, HT, Li, M, Li, Q

SCIENTIFIC REPORTS[2045-2322], Published 2016, Volume 6,

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影响因子: 5.228 找找相关文章 PlumX Metrics

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22.Dislocation analysis of InGaN/GaN quantum dots grown by metal organic chemical vapor deposition

Yang, D, Wang, L, Hao, ZB, Luo, Y, Sun, CZ, Han, YJ, Xiong, B, Wang, J, Li, HT

SUPERLATTICES AND MICROSTRUCTURES[0749-6036], Published 2016, Volume 99, Pages 221-225

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影响因子: 2.117 找找相关文章 PlumX Metrics

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23.Design of high-compactness freeform optical surfaces via energy accumulating optimization

Wang, K, Han, YJ, Li, HT, Luo, Y, Sun, CZ, Hao, ZB, Xiong, B, Wang, J, Wang, L

OPTICS EXPRESS[1094-4087], Published 2016, Volume 24, Issue 26, Pages A1489-A1504

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影响因子: 3.148 找找相关文章 PlumX Metrics

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24.A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure

Zheng, JY, Wang, L, Wu, XZ, Hao, ZB, Sun, CZ, Xiong, B, Luo, Y, Han, YJ, Wang, J, Li, HT, Brault, J, Matta, S, Al Khalfioui, M, Yan, JC, Wei, TB, Zhang, Y, Wang, JX

APPLIED PHYSICS LETTERS[0003-6951], Published 2016, Volume 109, Issue 24,

收录情况： WOS SCOPUS

影响因子: 3.142 找找相关文章 PlumX Metrics

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25.量子级联波长上转换系统红外响应特性研究

罗毅,郝智彪,王磊,康健彬,汪莱,熊兵,孙长征,王健,韩彦军,李洪涛,王禄,王文新,陈弘

红外与激光工程[1007-2276], Published 2016, Issue 01, Pages 26-31

收录情况： CNKI

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26.柔性环境应变对InGaAsP量子阱材料增益的影响

欧春晖,罗毅,王健,孙长征,韩彦军,熊兵,郝智彪,汪莱,李洪涛

中国科学:物理学力学天文学[1674-7275], Published 2016, Issue 04, Pages 91-96

收录情况： CNKI

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27.利用表面微结构提高波长上转换红外探测器效率

王超,郝智彪,王磊,康健彬,谢莉莉,罗毅,汪莱,王健,熊兵,孙长征,韩彦军,李洪涛,王禄,王文新,陈弘

物理学报[1000-3290], Published 2016, Issue 10, Pages 323-328

收录情况： CNKI

影响因子: 0.677 找找相关文章

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28.发光量子阱对波长上转换红外探测器效率的影响

康健彬,王磊,郝智彪,王超,谢莉莉,罗毅,汪莱,王健,熊兵,孙长征,韩彦军,李洪涛,王禄,王文新,陈弘

红外与毫米波学报[1001-9014], Published 2016, Issue 03, Pages 281-286

收录情况： CNKI

影响因子: 0.266 找找相关文章

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29.Size-dependent optical properties of InGaN quantum dots in GaN nanowires grown by MBE

E, Yanxiong, Hao, Zhibiao, Yu, Jiadong, Wu, Chao, Wang, Lai, Xiong, Bing, Wang, Jian, Han, Yanjun, Sun, Changzheng, Luo, Yi

Frontiers of Optoelectronics[2095-2759], Published 2016, Volume 9, Issue 2, Pages 318-322

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30.Growth of light-emitting devices based on InGaN quantum dots by MOVPE

Wang, Lai, Yang, Di, Yu, Jiadong, Hao, Zhibiao, Luo, Yi, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Wang, Jian, Li, Hongtao

2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, Published 2016, Volume 1,

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31.Laser annealing of SiO film deposited by ICPECVD for fabrication of silicon based low loss waveguide

Wang, Ya’nan, Luo, Yi, Sun, Changzheng, Xiong, Bing, Wang, Jian, Hao, Zhibiao, Han, Yanjun, Wang, Lai, Li, Hongtao

Frontiers of Optoelectronics[2095-2759], Published 2016, Volume 9, Issue 2, Pages 323-329

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32.Simple dynamic energy core equivalent rays method to design freeform surface for extended source

Wang, Kun, Han, Yanjun, Li, Hongtao, Luo, Yi, Hao, Zhibiao, Wang, Lai, Sun, Changzheng, Xiong, Bing, Wang, Jian

Frontiers of Optoelectronics[2095-2759], Published 2016, Volume 9, Issue 2, Pages 330-337

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33.Study of response characteristics for cascade infrared up-conversion system

Luo, Yi, Hao, Zhibiao, Wang, Lei, Kang, Jianbin, Wang, Lai, Xiong, Bing, Sun, Changzheng, Wang, Jian, Han, Yanjun, Li, Hongtao, Wang, Lu, Wang, Wenxin, Chen, Hong

Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering[1007-2276], Published 2016, Volume 45, Issue 1,

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34.The effects of external strain on the gain of InGaAsP quantum well

Ou, Chunhui, Luo, Yi, Wang, Jian, Sun, Changzheng, Han, Yanjun, Xiong, Bing, Hao, Zhibiao, Wang, Lai, Li, Hongtao

Scientia Sinica: Physica, Mechanica et Astronomica[1674-7275], Published 2016, Volume 46, Issue 4,

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35.Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots

Yang, Di,Wang, Lai,Lv, Wen-Bin,Hao, Zhi-Biao,Luo, Yi

Superlattices and Microstructures[0749-6036], Published 2015, Volume 82, Pages 26-32

影响因子: 2.117 找找相关文章 PlumX Metrics

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36.Studies on absorption efficiency enhancement of quantum well infrared photodetector by using photonic crystal structures

Liu, Zhi-Lin,Hao, Zhi-Biao,Wang, Lei,Kang, Jian-Bin,Wang, Lai,Luo, Yi

Guangdianzi Jiguang/Journal of Optoelectronics Laser[1005-0086], Published 2015, Volume 26, Issue 2, Pages 205-210

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37.Study on improving visible light photocatalytic activity of Ag3PO4 through morphology control

Wang, Bo,Wang, Lai,Hao, Zhibiao,Luo, Yi

CATALYSIS COMMUNICATIONS[1566-7367], Published 2015, Volume 58, Pages 117-121

收录情况： WOS

WOS核心合集引用:15 影响因子: 3.389 找找相关文章 PlumX Metrics

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38.光子晶体结构对量子阱红外探测器光吸收增强效应的研究

刘志林,郝智彪,王磊,康健彬,汪莱,罗毅

光电子·激光[1005-0086], Published 2015, Issue 02, Pages 5-10

收录情况： CNKI

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39.InGaN蓝光LED内量子效率的评测

汪莱,邢雨辰,郝智彪,罗毅,孙长征,韩彦军,熊兵,王健,李洪涛

中国科学:物理学力学天文学[1674-7275], Published 2015, Issue 06, Pages 57-63

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40.微型化原子磁力仪灵敏度上限的原子气室尺寸依赖性分析

王皓,熊兵,郝智彪,罗毅,齐京,孙长征,汪莱,王健,韩彦军,李洪涛

真空[1002-0322], Published 2015, Issue 04, Pages 78-82

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41.红外波长上转换器件中载流子阻挡结构的研究

康健彬,郝智彪,王磊,刘志林,罗毅,汪莱,王健,熊兵,孙长征,韩彦军,李洪涛,王禄,王文新,陈弘

物理学报[1000-3290], Published 2015, Issue 17, Pages 406-413

收录情况： CNKI

影响因子: 0.677 找找相关文章 PlumX Metrics

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42.A differential carrier lifetime analysis on GaN-based LED's quantum efficiency

Meng, Xiao,Wang, Lai,Yu, Jiadong,Hao, Zhibiao,Luo, Yi

Asia Communications and Photonics Conference, ACP[2162-108X], Published 2014,

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43.Fabrication of sub-200 nm AlN-GaN-AlN waveguide with cleaved end facet

Chen, Yijing,Krishnamurthy, Vivek,Lai, Yicheng,Luo, Yi,Hao, Zhibiao,Wang, Lai,Ho, Seng-Tiong

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B[1071-1023], Published 2014, Volume 32, Issue 4, Pages -

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WOS核心合集引用:1 影响因子: 1.398 找找相关文章 PlumX Metrics

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44.InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength

Lv, Wenbin,Wang, Lai,Wang, Lei,Xing, Yuchen,Yang, Di,Hao, Zhibiao,Luo, Yi

APPLIED PHYSICS EXPRESS[1882-0778], Published 2014, Volume 7, Issue 2, Pages -

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WOS核心合集引用:9 影响因子: 2.265 找找相关文章 PlumX Metrics

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45.MBE-grown AIN-on-Si with improved crystalline quality by using silicon-on-insulator substrates

Niu, Lang,Hao, Zhibiao,E, Yanxiong,Hu, Jiannan,Wang, Lai,Luo, Yi

APPLIED PHYSICS EXPRESS[1882-0778], Published 2014, Volume 7, Issue 6, Pages -

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WOS核心合集引用:1 影响因子: 2.265 找找相关文章 PlumX Metrics

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46.Phosphor-Free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots

Yang, Di,Wang, Lai,Lv, Wen-Bin,Hao, Zhi-Biao,Luo, Yi

Conference Digest - IEEE International Semiconductor Laser Conference[0899-9406], Published 2014, Pages 131-132

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47.Single chip phosphor-free white light-emitting diodes driven by variable current

Yu, Jiadong,Wang, Lai,Yang, Di,Zheng, Jiayuan,Hao, Zhibiao,Luo, Yi

Asia Communications and Photonics Conference, ACP[2162-108X], Published 2014,

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48.照亮世界的“新”光

罗毅,汪莱

物理[0379-4148], Published 2014, Issue 12, Pages 28-34

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49.Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si3N4

Hu, Jiannan,Hao, Zhibiao,Niu, Lang,E, Yanxiong,Wang, Lai,Luo, Yi

APPLIED PHYSICS LETTERS[0003-6951], Published 2013, Volume 102, Issue 14, Pages -

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WOS核心合集引用:7 影响因子: 3.142 找找相关文章 PlumX Metrics

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50.Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Lv, Wenbin,Wang, Lai,Wang, Jiaxing,Xing, Yuchen,Zheng, Jiyuan,Yang, Di,Hao, Zhibiao,Luo, Yi

JAPANESE JOURNAL OF APPLIED PHYSICS[0021-4922], Published 2013, Volume 52, Issue 8, Pages -

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WOS核心合集引用:9 影响因子: 1.122 找找相关文章 PlumX Metrics

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51.Modeling and experimental study on sensing response of an AlGaN/GaN HEMT-based hydrogen sensor

Guo, Zhibo,Wang, Lai,Hao, Zhibiao,Luo, Yi

SENSORS AND ACTUATORS B-CHEMICAL[0925-4005], Published 2013, Volume 176, Pages 241-247

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WOS核心合集引用:2 影响因子: 4.758 找找相关文章 PlumX Metrics

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52.A gan p-i-p-i-n ultraviolet avalanche photodiode

Zheng Ji-Yuan,Wang Lai,Hao Zhi-Biao,Luo Yi,Wang Lan-Xi,Chen Xue-Kang

CHINESE PHYSICS LETTERS[0256-307X], Published 2012, Volume 29, Issue 9, Pages -

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WOS核心合集引用:3 影响因子: 0.875 找找相关文章 PlumX Metrics

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53.An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes

Wang, Jiaxing,Wang, Lai,Wang, Lei,Hao, Zhibiao,Luo, Yi,Dempewolf, Anja,Muller, Mathias,Bertram, Frank,Christen, Juergen

JOURNAL OF APPLIED PHYSICS[0021-8979], Published 2012, Volume 112, Issue 2, Pages -

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WOS核心合集引用:26 影响因子: 2.101 找找相关文章 PlumX Metrics

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54.Development of hydrogen sensor based on AlGaN/GaN high electron mobility transistor structure

Guo, Zhibo,Wang, Lai,Hao, Zhibiao,Luo, Yi

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology[1672-7126], Published 2012, Volume 32, Issue 12, Pages 1089-1092

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55.Growth and characterization of self-assembled low-indium composition InGaN nanodots by alternate admittance of precursors

Zhao, Wei,Wang, Lai,Wang, Jiaxing,Lv, Wenbin,Hao, Zhibiao,Luo, Yi

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE[1862-6300], Published 2012, Volume 209, Issue 6, Pages 1096-1100

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WOS核心合集引用:2 影响因子: 1.648 找找相关文章 PlumX Metrics

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56.InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers

Lv, Wenbin,Wang, Lai,Wang, Jiaxing,Hao, Zhibiao,Luo, Yi

NANOSCALE RESEARCH LETTERS[1556-276X], Published 2012, Volume 7, Pages -

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57.Studies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy

Hu Yi-Bin,Hao Zhi-Biao,Hu Jian-Nan,Niu Lang,Wang Lai,Luo Yi

ACTA PHYSICA SINICA[1000-3290], Published 2012, Volume 61, Issue 23, Pages -

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58.The influence of underlying layer on morphology of InGaN quantum dots self-assembled by metal organic vapor phase epitaxy

Wang, Lai,Zhao, Wei,Lv, Wenbin,Wang, Lei,Hao, Zhibiao,Luo, Yi

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4[1862-6351], Published 2012, Volume 9, Issue 42067, Pages 782-785

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59.铝插入层对硅基AlN外延特性的影响

胡懿彬,郝智彪,胡健楠,钮浪,汪莱,罗毅

半导体光电[1001-5868], Published 2012, Issue 06, Pages 69-72

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60.分子束外延生长InGaN/AlN量子点的组分研究

胡懿彬,郝智彪,胡健楠,钮浪,汪莱,罗毅

物理学报[1000-3290], Published 2012, Issue 23, Pages 485-489

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61.基于AlGaN/GaN HEMT结构的氢气传感器

郭智博,汪莱,郝智彪,罗毅

真空科学与技术学报[1672-7126], Published 2012, Issue 12, Pages 34-37

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62.硅衬底上无微裂稀反极性畴AlN薄膜的分子束外延研究

胡健楠,钮浪,胡懿彬,鄂炎雄,郝智彪,汪莱,罗毅

Published 2012,

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63.基于InGaN量子点的GaN盖层生长条件优化

吕文彬,汪莱,郝智彪,罗毅

Published 2012,

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64.InGaN量子点的MOCVD生长

罗毅,汪莱,吕文彬,郝智彪

Published 2012,

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65.Density increase of upper quantum dots in dual ingan Quantum-Dot layers

Lv Wen-Bin,Wang Lai,Wang Jia-Xing,Hao Zhi-Biao,Luo Yi

CHINESE PHYSICS LETTERS[0256-307X], Published 2011, Volume 28, Issue 12, Pages -

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66.Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy

Zhao, Wei,Wang, Lai,Wang, Jiaxing,Hao, Zhibiao,Luo, Yi

JOURNAL OF APPLIED PHYSICS[0021-8979], Published 2011, Volume 110, Issue 1, Pages -

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67.Efficiency droop effect mechanism in an InGaN/GaN blue mqw led

Wang Jia-Xing,Wang Lai,Hao Zhi-Biao,Luo Yi

CHINESE PHYSICS LETTERS[0256-307X], Published 2011, Volume 28, Issue 11, Pages -

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68.Growth behavior of High-Indium-Composition ingan quantum dots using growth interruption method

Zhao, Wei,Wang, Lai,Lv, Wenbin,Wang, Lei,Wang, Jiaxing,Hao, Zhibiao,Luo, Yi

JAPANESE JOURNAL OF APPLIED PHYSICS[0021-4922], Published 2011, Volume 50, Issue 6, Pages -

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69.Improving the emission efficiency of MBE-grown GaN/AlN QDs by strain control

Niu, Lang,Hao, Zhibiao,Hu, Jiannan,Hu, Yibin,Wang, Lai,Luo, Yi

NANOSCALE RESEARCH LETTERS[1931-7573], Published 2011, Volume 6, Pages 1-6

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70.Luminescence properties of InxGa1-xN (x similar to 0.04) films grown by metal organic vapour phase epitaxy

Zhao Wei,Wang Lai,Wang Jia-Xing,Luo Yi

CHINESE PHYSICS B[1674-1056], Published 2011, Volume 20, Issue 7, Pages -

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WOS核心合集引用:5 影响因子: 1.436 找找相关文章 PlumX Metrics

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71.Photocatalysis of InGaN Nanodots Responsive to Visible Light

Wang Lai,Zhao Wei,Hao Zhi-Biao,Luo Yi

CHINESE PHYSICS LETTERS[0256-307X], Published 2011, Volume 28, Issue 5, Pages -

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72.Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy

Wang, Lai,Hao, Zhibiao,Han, Yanjun,Luo, Yi,Wang, Lanxi,Chen, Xuekang

Journal of Semiconductors[1674-4926], Published 2011, Volume 32, Issue 1,

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73.Theoretical study on critical thicknesses of InGaN grown on (0 0 0 1) GaN

Zhao, Wei,Wang, Lai,Wang, Jiaxing,Hao, Zhibiao,Luo, Yi

JOURNAL OF CRYSTAL GROWTH[0022-0248], Published 2011, Volume 327, Issue 1, Pages 202-204

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WOS核心合集引用:20 影响因子: 1.462 找找相关文章 PlumX Metrics

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74.薄p型层GaN基p-i-n型紫外探测器的反向漏电特性

邹翔,汪莱,裴晓将,赵维,王嘉星,罗毅

半导体光电[1001-5868], Published 2011, Issue 02, Pages 18-20

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75.氮化镓基发光二极管结构中粗化p型氮化镓层的新型生长方法

李水清,汪莱,韩彦军,罗毅,邓和清,丘建生,张洁

物理学报[1000-3290], Published 2011, Issue 09, Pages 714-718

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76.表面处理对AlGaN欧姆接触的影响及机理

王磊,王嘉星,汪莱,郝智彪,罗毅

半导体光电[1001-5868], Published 2011, Issue 05, Pages 55-57+123

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77.InGaN量子点的MOVPE生长

赵维,汪莱,郝智彪,罗毅

Published 2011,

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78.GaN基蓝光量子阱LED量子效率下降机制的理论分析

王嘉星,汪莱,郝智彪

Published 2011,

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79.基于AlGaN/GaN HEMT结构的溶液pH值传感器

郭智博,汪莱,郝智彪

Published 2011,

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80.Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells

Wang Lai,Wang Jia-Xing,Zhao Wei,Zou Xiang,Luo Yi

CHINESE PHYSICS B[1674-1056], Published 2010, Volume 19, Issue 7, Pages -

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81.Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility

Ren Fan,Hao Zhi-Biao,Wang Lei,Wang Lai,Li Hong-Tao,Luo Yi

CHINESE PHYSICS B[1674-1056], Published 2010, Volume 19, Issue 1, Pages -

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82.Effects of SiNx on two-dimensional electron gas and current collapse of AlGaN/GaN high electron mobility transistors

Ren, Fan,Ren, Fan,Ren, Fan,Hao, Zhi-Biao,Hao, Zhi-Biao,Hao, Zhi-Biao,Wang, Lei,Wang, Lei,Wang, Lei,Wang, Lai,Wang, Lai,Wang, Lai,Li, Hong-Tao,Li, Hong-Tao,Li, Hong-Tao,Luo, Yi,Luo, Yi,Luo, Yi

Chinese Physics B[1674-1056], Published 2010, Volume 19, Issue 1,

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83.GaN grown on AIN/sapphire templates

Wang Lai,Wang Lei,Ren Fan,Zhao Wei,Wang Jia-Xing,Hu Jian-Nan,Zhang Chen,Hao Zhi-Biao,Luo Yi

ACTA PHYSICA SINICA[1000-3290], Published 2010, Volume 59, Issue 11, Pages 8021-8025

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84.Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer

Wang JiaXing,Wang Lai,Zhao Wei,Zou Xiang,Luo Yi

SCIENCE CHINA-TECHNOLOGICAL SCIENCES[1674-7321], Published 2010, Volume 53, Issue 2, Pages 306-308

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85.Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

Wang, Jiaxing,Wang, Lai,Zhao, Wei,Hao, Zhibiao,Luo, Yi

APPLIED PHYSICS LETTERS[0003-6951], Published 2010, Volume 97, Issue 20, Pages -

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86.AlN/蓝宝石模板上生长的GaN研究

汪莱,王磊,任凡,赵维,王嘉星,胡健楠,张辰,郝智彪,罗毅

物理学报[1000-3290], Published 2010, Issue 11, Pages 498-502

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87.Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy

Jiang Yang,Luo Yi,Xi Guang-Yi,Wang Lai,Li Hong-Tao,Zhao Wei,Han Yan-Jun

ACTA PHYSICA SINICA[1000-3290], Published 2009, Volume 58, Issue 10, Pages 7282-7287

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88.Influence of pillar- and hole- patterned sapphire substrates on MOVPE grown GaN bulk and LED structures

Jiang Yang,Luo Yi,Wang Lai,Li Hong-Tao,Xi Guang-Yi,Zhao Wei,Han Yan-Jun

ACTA PHYSICA SINICA[1000-3290], Published 2009, Volume 58, Issue 5, Pages 3468-3473

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89.柱状与孔状图形衬底对MOVPE生长GaN体材料及LED器件的影响

江洋,罗毅,汪莱,李洪涛,席光义,赵维,韩彦军

物理学报[1000-3290], Published 2009, Issue 05, Pages 604-609

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90.AlGaN插入层对6H-SiC上金属有机物气相外延生长的GaN薄膜残余应力及表面形貌的影响

江洋,罗毅,席光义,汪莱,李洪涛,赵维,韩彦军

物理学报[1000-3290], Published 2009, Issue 10, Pages 612-617

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91.Dependence of GaN film sheet resistance on the N2 carrier gas percentage

Xi, Guang-Yi,Hao, Zhi-Biao,Wang, Lai,Li, Hong-Tao,Jiang, Yang,Zhao, Wei,Ren, Fan,Han, Yan-Jun,Sun, Chang-Zheng,Luo, Yi

Wuli Xuebao/Acta Physica Sinica[1000-3290], Published 2008, Volume 57, Issue 11, Pages 7233-7237

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92.Dependence of GaN film sheet resistance on the N-2 carrier gas percentage

Xi Guang-Yi,Hao Zhi-Biao,Wang Lai,Li Hong-Tao,Jiang Yang,Zhao Wei,Ren Fan,Han Yan-Jun,Sun Chang-Zheng,Luo Yi

ACTA PHYSICA SINICA[1000-3290], Published 2008, Volume 57, Issue 11, Pages 7233-7237

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93.Determination of the mosaic structure of GaN films by high resolution X-ray diffraction

Li, Hongtao,Luo, Yi,Wang, Lai,Xi, Guangi,Jiang, Yang,Zhao, Wei,Han, Yanjun

2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications, Published 2008, Pages 141-142

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94.Determination of the twist angle of GaN film by high resolution X-ray diffraction

Li, Hongtao,Luo, Yi,Wang, Lai,Xi, Guangyi,Jiang, Yang,Zhao, Wei,Han, Yanjun

APPLIED PHYSICS EXPRESS[1882-0778], Published 2008, Volume 1, Issue 4, Pages -

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95.Dislocation generation mechanism analysis of GaN grown on patterned sapphire substrate

Jiang, Yang,Luo, Yi,Xue, Xiao-Lin,Wang, Lai,Li, Hong-Tao,Xi, Guang-Yi,Zhao, Wei,Han, Yan-Jun

Guangdianzi Jiguang/Journal of Optoelectronics Laser[1005-0086], Published 2008, Volume 19, Issue 4, Pages 478-481

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