何珂
教授
蒙民伟科技大楼南楼S711
北京 100084
电话：
传真：
kehe@tsinghua.edu.cn
个人网页：http://www.stmbe.tsinghua.edu.cn/members/kehe

个人简历

教育经历：

1996年9月-2000年7月
山东大学物理系
学士

2000年9月-2006年3月
中国科学院物理研究所
博士

工作经历：

2006年4月-2007年3月
日本东京大学物理系
博士后

2007年4月-2009年3月
日本东京大学物性研究所
博士后

2009年4月-2013年9月
中国科学院物理研究所
副研究员（所级“”）

2013年9月-2016年6月
清华大学物理系
副研究员
2016年7月-今
清华大学物理系 教授
教学


研究领域

表面、界面与低维物理、拓扑绝缘体、自旋电子学、量子霍尔相关现象、分子束外延、角分辨光电子能谱、扫描隧道显微镜

奖励、荣誉和学术兼职

2010年中国科学院物理研究所科技新人奖
2011年中国科学院卢嘉锡青年人才奖
2012年中国科学院杰出科技成就奖（主要完成者）
2012年中国科学院青年创新促进会优秀会员
2013年获国家科学基金资助
2013年马丁·伍德爵士中国科学奖
2013年中国青年科技奖

主要论著

(* indicates the corresponding author(s) of the paper)
1. Chang, C.-Z.; Zhang, J.; Feng, X.; Shen, J.; Zhang, Z.; Guo, M.; Li, K.; Ou, Y.; Wei, P.; Wang, L.-L.; Ji, Z.-Q.; Feng, Y.; Ji, S.; Chen, X.; Jia, J.; Dai, X.; Fang, Z.; Zhang, S.-C.; He, K.*; Wang, Y.*; Lu, L.; Ma, X.-C.; Xue, Q.-K.*, Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator. Science 2013, 340 (6129), 167-170.
2. He, K.*; Ma, X. -C.; Chen, X.; Lu, L.; Wang, Y. -Y.*; Xue, Q. -K.*, From magnetically doped topological insulator to the quantum anomalous Hall effect. Chinese Physics B 2013, 22 (6), 067305.
3. Chang, C.-Z.; Zhang, J.; Liu, M.; Zhang, Z.; Feng, X.; Li, K.; Wang, L.-L.; Chen, X.; Dai, X.; Fang, Z.; Qi, X.-L.; Zhang, S.-C.; Wang, Y.*; He, K.*; Ma, X.-C.; Xue, Q.-K., Thin Films of Magnetically Doped Topological Insulator with Carrier-Independent Long-Range Ferromagnetic Order. Advanced Materials 2013, 25 (7), 1065-1070.
4. Zhang, J.; Chang, C.-Z.; Tang, P.; Zhang, Z.; Feng, X.; Li, K.; Wang, L.-l.; Chen, X.; Liu, C.; Duan, W.; He, K.*; Xue, Q.-K.; Ma, X.; Wang, Y.*, Topology-Driven Magnetic Quantum Phase Transition in Topological Insulators. Science 2013, 339 (6127), 1582-1586.
5. Zhang, Z.; Feng, X.; Guo, M.; Ou, Y.; Zhang, J.; Li, K.; Wang, L.; Chen, X.; Xue, Q.; Ma, X.; He, K.*; Wang, Y.*, Transport properties of Sb2Te3/Bi2Te3 topological insulator heterostructures. Physica Status Solidi-Rapid Research Letters 2013, 7 (1-2), 142-144.
6. Liu, M.; Zhang, J.; Chang, C.-Z.; Zhang, Z.; Feng, X.; Li, K.; He, K.*; Wang, L.-L.; Chen, X.; Dai, X.; Fang, Z.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Crossover between Weak Antilocalization and Weak Localization in a Magnetically Doped Topological Insulator. Physical Review Letters 2012, 108 (3), 036805.
7. He, K.*, Topological insulator: Both two- and three-dimensional. Frontiers of Physics 2012, 7 (2), 148-149.
8. Zhang, J.; Chang, C.-Z.; Zhang, Z.; Wen, J.; Feng, X.; Li, K.; Liu, M.; He, K.*; Wang, L.; Chen, X.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Band structure engineering in (Bi_1-xSb_x)₂Te₃ ternary topological insulators. Nature Communications 2011, 2(12), 574.
9. Song, C.-L.; Wang, Y.-L.; Cheng, P.; Jiang, Y.-P.; Li, W.; Zhang, T.; Li, Z.; He, K.; Wang, L.; Jia, J.-F.; Hung, H.-H.; Wu, C.; Ma, X.*; Chen, X.*; Xue, Q.-K., Direct Observation of Nodes and Twofold Symmetry in FeSe Superconductor. Science 2011, 332 (6036), 1410-1413.
10. Liu, M.; Chang, C.-Z.; Zhang, Z.; Zhang, Y.; Ruan, W.; He, K.*; Wang, L.-l.; Chen, X.; Jia, J.-F.; Zhang, S.-C.; Xue, Q.-K.; Ma, X.; Wang, Y.*, Electron interaction-driven insulating ground state in Bi2Se3 topological insulators in the two-dimensional limit. Physical Review B 2011, 83 (16), 165440.
11. Zhang, Y.; He, K.*; Chang, C.-Z.; Song, C.-L.; Wang, L.-L.; Chen, X.; Jia, J.-F.; Fang, Z.; Dai, X.; Shan, W.-Y.; Shen, S.-Q.; Niu, Q.; Qi, X.-L.; Zhang, S.-C.; Ma, X.-C.; Xue, Q.-K.*, Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit. Nature Physics 2010, 6 (8), 584-588.
12. He, K.; Takeichi, Y.; Ogawa, M.; Okuda, T.; Moras, P.; Topwal, D.; Harasawa, A.; Hirahara, T.; Carbone, C.; Kakizaki, A.; Matsuda, I.*, Direct Spectroscopic Evidence of Spin-Dependent Hybridization between Rashba-Split Surface States and Quantum-Well States. Physical Review Letters 2010, 104 (15), 156805.
13. Zhang, Y.; Chang, C.-Z.; He, K.*; Wang, L.-L.; Chen, X.; Jia, J.-F.; Ma, X.-C.*; Xue, Q.-K., Doping effects of Sb and Pb in epitaxial topological insulator Bi2Se3 thin films: An in situ angle-resolved photoemission spectroscopy study. Applied Physics Letters 2010, 97 (19), 194102.
14. Cheng, P.; Song, C.; Zhang, T.; Zhang, Y.; Wang, Y.; Jia, J.-F.; Wang, J.; Wang, Y.; Zhu, B.-F.; Chen, X.*; Ma, X.*; He, K.; Wang, L.; Dai, X.; Fang, Z.; Xie, X.; Qi, X.-L.; Liu, C.-X.; Zhang, S.-C.; Xue, Q.-K., Landau Quantization of Topological Surface States in Bi2Se3. Physical Review Letters 2010, 105 (7), 076801.
15. Zhang, T.; Cheng, P.; Li, W.-J.; Sun, Y.-J.; Wang, G.; Zhu, X.-G.; He, K.; Wang, L.; Ma, X.; Chen, X.*; Wang, Y.; Liu, Y.; Lin, H.-Q.; Jia, J.-F.; Xue, Q.-K.*, Superconductivity in one-atomic-layer metal films grown on Si(111). Nature Physics 2010, 6 (2), 104-108.
16. Zhang, T.; Cheng, P.; Chen, X.*; Jia, J.-F.; Ma, X.; He, K.; Wang, L.; Zhang, H.; Dai, X.; Fang, Z.; Xie, X.; Xue, Q.-K.*, Experimental Demonstration of Topological Surface States Protected by Time-Reversal Symmetry. Physical Review Letters 2009, 103 (26), 266803.
17. He, K.*; Hirahara, T.; Okuda, T.; Hasegawa, S.; Kakizaki, A.; Matsuda, I., Spin polarization of quantum well states in Ag films induced by the Rashba effect at the surface. Physical Review Letters 2008, 101 (10), 107604.
18. Ma, L.-Y.; Tang, L.; Guan, Z.-L.; He, K.; An, K.; Ma, X.-C.; Jia, J.-F.*; Xue, Q.-K.; Han, Y.; Huang, S.; Liu, F., Quantum size effect on adatom surface diffusion. Physical Review Letters2006, 97 (26), 266102.
19. He, K.; Pan, M.; Wang, J.; Liu, H.; Jia, J.*; Xue, Q., Growth and magnetism of self-organized Co nanoplatelets on Si(111) surface. Surface and Interface Analysis 2006, 38 (6), 1028-1033.
20. He, K.; Ma, L. Y.; Ma, X. C.; Jia, J. F.; Xue, Q. K.*, Two-dimensional growth of Fe thin films with perpendicular magnetic anisotropy on GaN(0001). Applied Physics Letters 2006, 88 (23), 232503.
21. He, K.; Zhang, L.; Ma, X.; Jia, J.; Xue, Q.*; Qiu, Z., Growth and magnetism of ultrathin Fe films on Pt(100). Physical Review B 2005, 72 (15), 155432.