汪莱 博士、副教授
通讯地址：北京市海淀区清华大学电子工程系 100084
办公室位置：罗姆楼2-305
电话：+86-10-6279-8240
传真：+86-10-6278-4900
电子邮箱：wanglai@tsinghua.edu.cn
教育背景2008年 清华大学电子工程系物理电子学专业博士学位
2003年 清华大学电子工程系电子科学与技术专业学士学位

工作履历2012至今清华大学电子工程系 副教授
2010-2012 清华大学电子工程系 助理研究员
2008-2010年 清华大学电子工程系 博士后

学术兼职2014年第5届白光LED和半导体照明国际会议出版委员会委员
2014年亚洲通信与光子会议技术委员会委员
2015年第16届半导体缺陷识别、成像与物理国际会议程序委员会委员

研究领域面向国民经济和国家安全的发展需求，围绕第三代半导体材料——GaN基材料，开展支撑半导体照明技术、新能源技术、量子技术、纳米技术、紫外探测技术、传感技术的关键新材料、新工艺和新器件研究。研究内容包括：
GaN基材料的MOCVD生长技术；
GaN基发光二极管；
InGaN量子点及器件；
GaN基纳米材料及纳米结构；
GaN基紫外光探测器和气体、液体传感器。

研究概况氮化物半导体材料被称作第三代半导体，是一种宽禁带半导体材料。在可见光、紫外光光电器件和大功率电子器件方面有重要应用。本课题组从2000年起率先在国内开展了氮化物LED的研究，在高内量子效率InGaN量子阱外延生长和机理研究方面取得了一系列成果。近年来，在国内率先开展了InGaN量子点的生长研究，研制出基于多层量子点有源区的蓝、绿、黄、红、近红外、白光等多色LED，为下一代高色品半导体照明光源、低阈值可见光激光器的研制奠定了基础。
本人目前承担国家自然科学基金青年基金1项、国家“973”计划课题2项、国家“863”计划子课题3项、国家重点实验室开放基金1项。

奖励与荣誉2011年荣获国家科技进步二等奖，排名第8。

学术成果迄今为止共发表SCI论文40余篇，累计他引160余次。主要代表性论文如下：
[1]Wang Lai, Yang Di, Hao Zhi-Biao, and Luo Yi. Metal-organic-vapor phase epitaxy of InGaN quantum dots and their applications in light-emitting diodes, CHINESE PHYSICS B, 24(6): 067303, 2015.
[2]Yang Di, Wang Lai, Lv Wen-Bin, Hao Zhi-Biao, and Luo Yi. Growth and characterization of phosphor-free white light-emitting diodes based on InGaN blue quantum wells and green-yellow quantum dots, Superlattices and Microstructures, 82: 26-32, 2015.
[3]Wang Lai, Xing Yuchen, Hao Zhibiao, and Luo Yi. Study on carrier lifetimes in InGaN multi-quantum well with different barriers by time-resolved photoluminescence, Physica Status Solidi B, 252(5) SI: 956-960, 2015.
[4]Wang Bo, Wang Lai, Hao Zhibiao, and Luo Yi. Study on improving visible light photocatalytic activity of Ag3PO4 through morphology control, Catalysis Communications, 58:117-121, 2015.
[5]Chen, Yijing, Krishnamurthy Vivek, Lai Yicheng, Luo Yi, Hao Zhibiao, Wang Lai, and Ho Seng-Tiong. Fabrication of sub-200 nm AlN-GaN-AlN waveguide with cleaved end facet. Journal of Vacuum Science & Technology B, 32(4): 041207, 2014.
[6]Lai Wang, Wenbin Lv, Zhibiao Hao, and Yi Luo. Recent progresses on InGaN quantum dot light-emitting diodes. Front. Optoelectron., 7(3): 293, 2014. (invited review article)
[7]Niu Lang, Hao Zhibiao, E Yanxiong, Hu Jiannan, Wang Lai, and Luo Yi. MBE-grown AIN-on-Si with improved crystalline quality by using silicon-on-insulator substrates. Applied Physics Express, 7(6): 065505, 2014.
[8]Lv Wenbin, Wang Lai, Wang Lei, Xing Yuchen, Yang Di, Hao Zhibiao, and Luo Yi. InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength. Applied Physics Express, 7(2): 025203, 2014.
[9]Lv Wenbin, Wang Lai*, Wang Jiaxing, et. al., Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method, Japanese Journal of Applied Physics, 52, UNSP 08JG13, 2013
[10]Guo Zhibo, Wang Lai*, Hao Zhibiao, et. al., Modeling and experimental study on sensing response of an AlGaN/GaN HEMT-based hydrogen sensor, Sensors and Actuators B-chemical, 176, 241-247, 2013.
[11]Lv Wenbin, Wang Lai*, Wang Jiaxing, Hao Zhibiao, and Luo Yi, InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers, Nanoscale Research Letters, 7, 617, 2012.
[12]Zheng Ji-Yuan, Wang Lai, Hao Zhi-Biao, et. al., A GaN p-i-p-i-n Ultraviolet Avalanche Photodiode, Chinese Physics Letters, 29, 097804, 2012.
[13]Wang Jiaxing, Wang Lai*, Wang Lei, et. al., An improved carrier rate model to evaluate internal quantum efficiency and analyze efficiency droop origin of InGaN based light-emitting diodes, Journal of Applied Physics, 112, 023107, 2012.
[14]Zhao Wei, Wang Lai*, Wang Jiaxing, Lv Wenbin, Hao Zhibiao, and Luo Yi, Growth and characterization of self-assembled low-indium composition InGaN nanodots by alternate admittance of precursors, Physica Status Solidi A, 209, 1096, 2012.
[15]Wang Lai*, Zhao Wei, Lv Wenbin, Wang Lei, Hao Zhibiao and Luo Yi, The influence of underlying layer on morphology of InGaN quantum dots self-assembled by metal organic vapor phase epitaxy, Physica Status Solidi C, 9, 782, 2012.
[16]Lv Wenbin, Wang Lai*, Wang Jiaxing, Hao Zhibiao, and Luo Yi, Density increase of upper quantum dots in dual InGaN quantum-dot layers, Chinese Physics Letters, 28, 128101, 2011.
[17]Wang Jia-Xing, Wang Lai, Hao Zhi-Biao, et. al., Efficiency Droop Effect Mechanism in an InGaN/GaN Blue MQW LED, Chinese Physics Letters, 28, 118105, 2011.
[18]Li Shui-Qing, Wang Lai, Han Yan-Jun, et. al., A new growth method of roughed p-GaN in GaN-based light emitting diodes, Acta Physica Sinica, 60, 098107, 2011.
[19]Zhao Wei, Wang Lai*, Wang Jiaxing, Hao Zhibiao, and Luo Yi, Theoretical study on critical thicknesses of InGaN grown on (0001) GaN, Journal of Crystal Growth, 327, 202, 2011.
[20] Zhao Wei, Wang Lai*, Wang Jiaxing, and Luo Yi, Luminescence properties of InxGa1-xN (x~0.04) films grown by metal organic vapour phase epitaxy, Chinese Physics B, 20, 076101, 2011.
[21]Zhao Wei, Wang Lai*, Wang Jiaxing, Hao Zhibiao, and Luo Yi, Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy, Journal of Applied Physics, 110, 014311, 2011.
[22]Zhao Wei, Wang Lai*, Lv Wenbin, Wang Lei, Wang Jiaxing, Hao Zhibiao, and Luo Yi, Growth Behavior of High-Indium-Composition InGaN Quantum Dots Using Growth Interruption Method, Japanese Journal of Applied Physics, 50, 065601, 2011.
[23]Wang Lai*, Zhao Wei, Hao Zhibiao, and Luo Yi, Photocatalysis of InGaN nanodots responsive to visible light, Chinese Physics Letters, 28, 057301, 2011.
[24]Wang, Jiaxing, Wang, Lai*, Zhao, Wei, et. al., Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization, Applied Physics Letters, 97, 201112, 2010.
[25]Wang Lai*, Wang Lei, Ren Fan, et. al., GaN grown on AIN/sapphire templates, Acta Physica Sinica, 59, 8021-8025, 2010.
[26]Wang Lai*, Wang Jia-Xing, Zhao Wei, et. al., Effects of InGaN barriers with low indium content on internal quantum efficiency of blue InGaN multiple quantum wells, Chinese Physics B, 19, 076803, 2010.
[27]Wang JiaXing, Wang Lai*, Zhao Wei, et. al., Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer, Science China-Technological Sciences, 53, 306-308, 2010.
[28] Wang Lai*, Zhang Xian-Peng, Xi Guang-Yi, et. al., Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy, Acta Physica Sinica, 57, 5923-5927, 2008.
[29]Wang Lai*, Li Hongtao, Xi Guangyi, et. al., Effect of p-n junction location on characteristics of InGaN/GaN multiple-quantum-well light-emitting diodes, Japanese Journal of Applied Physics, 47, 7101-7103, 2008
[30]Wang Lai*, Wang Jiaxing, Li Hongtao, Study on injection efficiency in InGaN/GaN multiple quantum wells blue light emitting diodes, Applied Physics Express, 1, 021101, 2008.