梁松，男，博士，研究员，博士生导师。
1999年及2002年于北京科技大学材料物理专业获得学士及硕士学位；2006年于中科院半导体所获得微电子学与固体电子学专业博士学位；2006年至今在中科院半导体所半导体材料科学重点实验室工作。
研究方向：
1）InP基半导体光电子单片集成芯片的研制，如多波长DFB激光器阵列、可调谐激光器阵列、用于THz信号产生的高速光混频器阵列等；2）新型光电子器件研究，如晶体管激光器、晶体管光探测器、新型ROF系统光源等；3）高性能III-V族半导体光电子材料的MOCVD生长；4）半导体光电子器件及材料的数值模拟。
联系方式：
E-mail：liangsong@semi.ac.cn；电话：
承担及参与的科研项目：
1.自然科学基金重点项目《高速高线性度激光器及探测器阵列集成研究》，负责人，2017-2021；
2.自然科学基金项目《基于UTC-PD的THz天线阵列研究》，负责人，2015-2018；
3.自然科学基金项目《高性能InP基晶体管激光器研究》，负责人，2013-2016；
4.863项目《1×4阵列式波长可调谐40G激光器及其封装的研究》，子课题负责人，2013-2016；
5.自然科学基金重大项目《10×10Gb/s并行光发射单片集成芯片设计与制备》，子课题负责人，2011-2014；
6.863项目《10×10Gb/s单片集成传输芯片及系统模块技术》，骨干，2012-2014；
7.自然科学基金项目《脊波导InP基光敏晶体管的研究》，子课题负责人，2011-2013；
8.自然科学基金项目《InP基晶体管激光器的研究》，负责人，2007-2009。
主要论文(*为通讯作者)：
1.Xu,J.,Liang,S.*,Qiao,L.,Han,L.,Sun,S.,Zhu,H.,&Wang,W.LaserArraysWith25-GHzChannelSpacingFabricatedbyCombiningSAGandRECTechniques.IEEEPhotonicsTechnologyLetters,28(20),2249-2252（2016）.
2.Qiao,L.,Liang,S.*,Zhu,H.,&Wang,W.DopingofActiveRegioninLongWavelengthInP-BasedTransistorLasers.IEEEPhotonicsJournal,8(3),1-8(2016).
3.Deng,Q.,Xu,J.,Guo,L.,Liang,S.*,Hou,L.,&Zhu,H.ADual-GratingInGaAsP/InPDFBLaserIntegratedWithanSOAforTHzGeneration.IEEEPhotonicsTechnologyLetters,28(21),2307-2310(2016).
4.SongLiang*,LijunQiao,HongliangZhu&WeiWang,Highcurrentgaintransistorlaser,ScientificReports6,27850(2016)
5.LiangshunHan，SongLiang*，JunjieXu，LijunQiao，HuitaoWang，LingjuanZhao，HongliangZhu，WeiWang，DBRLaserwithover20nmWavelengthTuningRange,IEEEPhotonicsTechnologyLetters,2016,28(9)943-946.
6.LijunQiao,SongLiang*,LiangshunHan,JunjieXu,HongliangZhu,WeiWang,Continuous-waveoperationupto20oCofdeep-ridgenpn-InGaAsP/InPmultiplequantumwelltransistorlaseremittingat1.5-μmwavelength,OpticsExpress,2015,23(9):11388-11393.
7.LiangshunHan,SongLiang*,HuitaoWang,JunjieXu,LijunQiao,HongliangZhu,WeiWang,FabricationofLow-CostMultiwavelengthLaserArraysforOLTsinWDM-PONsbyCombiningtheSAGandBIGTechniques,PhotonicsJournal,IEEE,2015,7(4):1-7.
8.LiangshunHan,SongLiang*,HongliangZhu,WeiWang,Fabricationofanelectro-absorptionmodulateddistributedfeedbacklaserbyquantumwellintermixingwithetchingion-implantationbufferlayer,ChineseOpticsLetters,2015,13(8):081301-1-081301-4.
9.LiangshunHan,SongLiang*,CanZhang,HongliangZhu,WeiWang,AHighExtinctionRatioPolarizationBeamSplitterwithMMICouplersonInPSubstrate,IEEEPhotonicsTechnologyLetters,2015,27:782-785.
10.LiangshunHan,SongLiang*,HongliangZhu,LijunQiao,JunjieXu,WeiWang,Two-modeDe/MultiplexerbasedonMultimodeInterferenceCouplerswithaTiltedJointasPhaseShifter,OpticsLetters,2015,40(4):518-521.
11.SongLiang*,LijunQiao,LiangshunHan,JunjieXu,HongliangZhu,WeiWang,TransistorLaserwithaCurrentConfinementApertureintheEmitterRidge,IEEEElectronicDeviceLetters,2015,36(10):1063-1065.
12.HuoWenjuan,LiangSong*,CanZhang,ShaoyangTan,LiangshunHan,HongyunXie,HongliangZhu,WeiWang,FabricationandcharacterizationofdeepridgeInGaAsP/InPlightemittingtransistors,Opticsexpress,2014,22:1806-1814.
13.LiangshunHan,SongLiang*,HuitaoWang,LijunQiao,JunjieXu,LingjuanZhao,HongliangZhu,WeiWang,Electroabsorption-modulatedwidelytunableDBRlasertransmitterforWDM-PONs,OpticsExpress,2014,22:30368-30376.
14.CanZhang,SongLiang*,HongliangZhu,LiangshunHan,WeiWang,MultichannelDFBLaserArraysFabricatedbyUpperSCHLayerSAGTechnique,IEEEJournalofQuantumElectronics8,2014,50:92-97.
15.CanZhang,BaojunWang,SongLiang,HongliangZhu,WeiWang,Mode-Hop-FreePhotonicCrystalLaserFabricatedbyHolographicExposureTechnology,OpticsLetters,2014,39(10):2892-2895.
16.CanZhang,SongLiang*,HongliangZhu,LiangshunHan,DanLu,LingjuanZhao,WeiWang,Thefabricationof10-channelDFBLaserArraybySAGtechnology,OpticsCommunications,2013,311:6-10.
17.CanZhang,SongLiang*,HongliangZhu,LiMa,BaojunWan,ChenJi,WeiWang,Multi-channelDFBlaserarraysfabricatedbySAGtechnology,OpticsCommunications,2013,300:230-235.
18.CanZhang,SongLiang*,LiMa,LiangshuHan,HongliangZhu,Multi-channelDFBlaserarrayfabricatedbySAGwithoptimizedepitaxyconditions,ChineseOpticsLetters,2013,11(4):041401.
19.CanZhang,SongLiang,HongliangZhu,WeiWang,Widelytunabledual-modedistributedfeedbacklaserfabricatedbyselectiveareagrowthtechnologyintegratedwithTiheaters,OpticsLetters,2013,38(16):3050-3053.
20.CanZhang,HongliangZhu,SongLiang,LiangshunHan,WeiWang,Monolithicallyintegrated4-channel-selectablelightsourcesfabricatedbytheSAGtechnology,IEEEPhotonicsJournal,2013,5(4):**.
21.CanZhang,SongLiang,HongliangZhu,WeiWang,TunableDFBlasersintegratedwithTithinfilmheatersfabricatedwithasimpleprocedure,Optics&LaserTechnology,2013,54(30):148-150.
22.ChanZhang,SongLiang*,HongliangZhu,BaojunWang,WeiWang,AmodifiedSAGtechniqueforthefabricationofDWDMDFBlaserarrayswithhighlyuniformwavelengthspacings,Opticsexpress,2012,20(28):29620-29625.
23.DuanhuaKong,HongliangZhu,SongLiang*,JifangQiu,LingjuanZhao,UltrashortPulseGenerationatQuasi-40-GHzbyUsingaTwo-SectionPassivelyMode-LockedInGaAsP-InPTensileStrainedQuantum-WellLaser,Chin.Phys.Lett.,2012,29(2):024201.
24.DuanhuaKong,HongLiangZhu,SongLiang,WenkeYu,CaiyunLou,LingjuanZhao,All-opticalclockrecoveryusingparallelridge-widthvariedDFBlasersintegratedwithY-branchwaveguidecoupler,OpticsCommunications,2012,285(3):311-314.
25.LiangSong*,KongDuanhua,Duanhua.Kong,HongliangZhu,LingjuanZhao,JiaoqingPan,WeiWang,InP-baseddeep-ridgeNPNtransistorlaser,OPTICSLETTERS,2011,36(16):3206-3208.
26.SongLiang*,HongliangZhu,DuanhuaKong,BinNiu,LingjuanZhao,WeiWang,Temperatureperformanceoftheedgeemittingtransistorlaser,AppliedPhysicsLetters,2011,99(1):013503.
27.SongLiang*,DuanhuaKong,HogliangZhu,WeiWang,Growthsimulationsofself-assemblednanowiresonsteppedsubstrates,IEEEJournalofSelectedTopicsinQuantumElectronics,2011,17:960-965.
28.SongLiang*,HongliangZhu,DuanhuaKong,WeiWang,Formationtrendsoforderedself-assemblednano-islandsonsteppedsubstrates,J.ofAppliedPhysics,2010,108(7):073512-1-073512-5.
29.DuanhuaKong,HongliangZhu,SongLiang,CaiyunLou,BaojunWang,LingjuanZhao,All-opticalclockrecoveryusingaridgewidthvariedtwo-sectionpartlygain-coupledDFBself-pulsationlaser,OpticsCommunications,2010,283(20):3970-3975.
30.Zhu,Hongliang,Xu,Xiaodong,Wang,Huan,Kong,Duanhua,Liang,Song,Zhao,Lingjuan,Wang,Wei,TheFabricationofEight-ChannelDFBLaserArrayUsingSampledGratings,IEEEPhotonicsTechnologyLetters,2010,22(5):353-355.
31.SongLiang*,HongliangZhu,XiaolingYe,WeiWang,Annealingbehaviorsoflong-wavelengthInAs/GaAsquantumdotswithdifferentgrowthproceduresbymetalorganicchemicalvapordeposition,JournalofCrystalGrowth,2009,311(8):2281-2284.
32.Kong,Duanhua,Zhu,Hongliang,Liang,Song*,Zhang,Hongguang,Sun,Yu,Wang,Hun,Zhang,Wei,Zhao,Lingjuan,Aridgewidthvariedtwo-sectionindex-coupledDFBself-pulsationlaserwithawidecontinuouslytunablefrequencyrange,JournalofPhysicsD:AppliedPhysics,2009,42(12):125105.
33.SongLiang*,HongliangZhu,XiaolingYe,JiaoqingPan,LingjuanZhao,WeiWang,Anomalouscoarseningofself-assembledInAsquantumdotsonvicinalGaAs(100)substrates,JournalofPhysicsD:AppliedPhysics,2009,42(5):055310.
34.SongLiang*,HongliangZhu,WeiWang,ShapestabilityofInAsself-assembledislandsonvicinalGaAs(001)substrates,ChemicalPhysicsLetters,2009,468(4-6):249-252.
35.SongLiang*,Hongliangzhu,WeiWang,Sizedistributionsofquantumislandsonsteppedsubstrates,J.ChemicalPhysics,2009,131:154704.
36.LiangSong*,ZhuHongliang,PanJiaoqing,ZhaoLingjuan,WangLufeng,ZhouFan,WangWei,PhotoluminescenceandlasingpropertiesofInAs/GaAsquantumdotsgrownbymetal-organicchemicalvapordeposition,ChinesePhysics,2008,17:1674-1677.
37.SongLiang*,HongliangZhu,WeiWang,Temperature-dependentbimodalsizeevolutionofInAsquantumdotsonvicinalGaAs(100)substrates,JournalofAppliedPhysics,2006,100(10).
38.SongLiang*,HongliangZhu,XiaolingYe,WeiWang,EffectofGaAS(100)2degreessurfacemisorientationontheformationandopticalpropertiesofMOCVDgrownInAsquantumdots,AppliedSurfaceScience,2006,252(23):8126-8130.
39.SongLiang*,HongliangZhu,JiaoqingPan,WeiWang,DependenceofbimodalsizedistributionontemperatureandopticalpropertiesofInAsquantumdotsgrownonvicinalGaAs(1-00)substratesbyusingMOCVD,ChinesePhysics,2006,15(5):1114-1119.
40.SongLiang*,HongliangZhu,JiaoqingPan,XiaolingYe,WeiWang,GrowthofInAsquantumdotsonvicinalGaAs(100)substratesbymetalorganicchemicalvapordepositionandtheiropticalproperties,JournalofCrystalGrowth,2006,289(2):477-484.
41.SongLiang*,HongliangZhu,JiaoqingPan,LingjuanZhao,WeiWang,EffectofannealingonopticalpropertiesofInAsquantumdotsgrownbyMOCVDonGaAs(100)vicinalsubstrates,ChinesePhysicsLetters,2005,22(10):2692-2695.
42.SongLiang*,HongliangZhu,JiaoqingPan,LianpingHou,WeiWang,ComparativestudyofInAsquantumdotsgrownondifferentGaAssubstratesbyMOCVD,JournalofCrystalGrowth,2005,282(3-4):297-304.
授权专利：
1.梁松，朱洪亮，王圩，激光器阵列与合波器单片集成芯片的制作方法，2016.1.6，中国，CNB。
2.梁松，张灿，于立强，赵玲娟，一种分布布拉格反馈可调谐激光器及其制作方法，2015.8.26，中国，CNB。
3.梁松，朱洪亮，基于波导型边入射光混频器的THz天线阵列，2015.10.7，中国，CN6。
4.梁松，张灿，韩良顺，朱洪亮，王圩，多波长激光器阵列芯片的制作方法，2015.4.8，中国，CNB。
5.张灿，梁松，朱洪亮，单片集成钛薄膜热电阻可调谐DFB激光器的制作方法，2014.12.3，中国，CNB。
6.梁松，赵玲娟，朱洪亮，王圩，可调谐激光器与光放大器单片集成器件的制作方法，2014.9.3，中国，CNB。
7.梁松，张灿·，朱洪亮，王圩，利用选择区域外延技术制作分布反馈激光器阵列的方法，2014，中国，CNB。
8.LiangSong，zhangcan，zhuHongliang，WangWei，Methodofmanufacturingmulti-wavelengthsdistributedfeedback(DFB)laserarrayincludingtopseparateconfinementlayerhavingdifferentthicknesslaserunitsonthequantum-welllayergrownbyselectiveareaepitaxialgrowth，2014，美国，**。
9.张灿，梁松，朱洪亮，抑制空间烧孔效应的分布反馈激光器的制作方法，2012，中国，CNB。
10.梁松，朱洪亮，王圩，双极型晶体管与半导体激光器单片集成器件的制作方法，2012，中国，CNB。
11.梁松，孔端华，朱洪亮，电吸收调制器与自脉动激光器单片集成器件的制作方法，2012，中国，CNB。
12.梁松，朱洪亮，基于边入射光混频器的THz天线阵列，2012，中国，CNB。
13.梁松，朱洪亮，王圩，NPN异质结双极型晶体管激光器，2008，中国，CNB。
14.梁松，朱洪亮，无铝1.3μm铟砷/镓砷量子点激光器，2008，中国，CNC。