Author(s): Huang, JL (Huang, Jianliang); Zhao, CC (Zhao, Chengcheng); Nie, BY (Nie, Biying); Xie, SY (Xie, Shiyu); Kwan, DCM (Kwan, Dominic C. M.); Meng, X (Meng, Xiao); Zhang, YH (Zhang, Yanhua); Huffaker, DL (Huffaker, Diana L.); Ma, WQ (Ma, Wenquan)
Source: PHOTONICS RESEARCH Volume: 8 Issue: 5 Pages: 755-759 DOI: 10.1364/PRJ.385177 Published: MAY 1 2020
Abstract: We report on a high-performance mid-wavelength infrared avalanche photodetector (APD) with separate absorption and multiplication regions. InAs is used as the absorber material and high-bandgap AlAs0.13Sb0.87 is used as the multiplication material. At room temperature, the APD's peak response wavelength is 3.27 mu m, and the 50% cutoff wavelength is 3.5 mu m. The avalanche gain reaches 13.1 and the responsivity is 8.09 A/W at 3.27 mu m when the applied reverse bias voltage is 14.6 V. The measured peak detectivity D* of the device is 2.05 x 10(9) cm Hz(0.5)/W at 3.27 mu m. (C) 2020 Chinese Laser Press
Accession Number: WOS:000530893100018
ISSN: 2327-9125
Full Text: https://www.osapublishing.org/prj/abstract.cfm?uri=prj-8-5-755