Author(s): Zhang, Y (Zhang, Yang); Liu, Y (Liu, Yu); Zeng, XL (Zeng, Xiao Lin); Wu, J (Wu, Jing); Yu, JL (Yu, Jin Ling); Chen, YH (Chen, Yong Hai)
Source: OPTICS EXPRESS Volume: 28 Issue: 6 Pages: 8331-8340 DOI: 10.1364/OE.387692 Published: MAR 16 2020
Abstract: The photo-excited electrons and holes move in the same direction in the diffusion and in the opposite direction in the drift under an electric field. Therefore, the contribution to the inverse spin Hall current of photo-excited electrons and holes in the diffusion regime is different to that in the drift regime under electric field. By comparing the classical Hall effect with the inverse spin Hall effect in both diffusion and drift regime, we develop an optical method to distinguish the contributions of electrons and holes in the inverse spin Hall effect. It is found that the contribution of the inverse spin Hall effect of electrons and holes in an InGaAs/AlGaAs un-doped multiple quantum well is approximately equal at room temperature. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
Accession Number: WOS:000522511600048
PubMed ID: 32225460
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Yu, Jinling 0000-0003-0108-136X
ISSN: 1094-4087
Full Text: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-28-6-8331