Author(s): Zhao, XY (Zhao, Xiao-Yu); Huang, JH (Huang, Jun-Hui); Zhuo, ZY (Zhuo, Zhi-Yao); Xue, YZ (Xue, Yong-Zhou); Ding, K (Ding, Kun); Dou, XM (Dou, Xiu-Ming); Liu, J (Liu, Jian); Sun, BQ (Sun, Bao-Quan)
Source: CHINESE PHYSICS LETTERS Volume: 37 Issue: 4 Article Number: 044204 DOI: 10.1088/0256-307X/37/4/044204 Published: APR 2020
Abstract: We investigate the pressure spectral characteristics and the effective tuning of defect emissions in hexagonal boron nitride (hBN) at low temperatures using a diamond anvil cell (DAC). It is found that the redshift rate of emission energy is up to 10 meV/GPa, demonstrating a controllable tuning of single photon emitters through pressure. Based on the distribution character of pressure coefficients as a function of wavelength, different kinds of atomic defect states should be responsible for the observed defect emissions.
Accession Number: WOS:000529238900001
ISSN: 0256-307X
eISSN: 1741-3540
Full Text: https://iopscience.iop.org/article/10.1088/0256-307X/37/4/044204