Author(s): Liu, Z (Liu, Zeng); Zhi, YS (Zhi, Yusong); Li, S (Li, Shan); Liu, YY (Liu, Yuanyuan); Tang, X (Tang, Xiao); Yan, ZY (Yan, Zuyong); Li, PG (Li, Peigang); Li, XH (Li, Xiaohang); Guo, DY (Guo, Daoyou); Wu, ZP (Wu, Zhenping); Tang, WH (Tang, Weihua)
Source: JOURNAL OF PHYSICS D-APPLIED PHYSICS Volume: 53 Issue: 8 Article Number: 085105 DOI: 10.1088/1361-6463/ab596f Published: FEB 20 2020
Abstract: Schottky and Ohmic contacts are key matters affecting carrier transport in oxide semiconductor-based electrical and optical devices. For Ga2O3, the comparison of optoelectrical behaviors and the fundamental physical mechanism between these two contacts are not well known yet. In this work, beta-Ga2O3 thin films were grown via metal-organic chemical vapor deposition then deposited with symmetrical Ni/Au (Schottky) or Ti/Au (Ohmic) contacts. Optoelectrical measurements show that the Ohmic contacted device exhibits superior responsivities thanks to its higher photocurrents.Meanwhile, for the Schottky contacted device, firstly, it has a faster response speed, and secondly it exhibits larger photo-to-dark current ratios owing to their low dark current. Specifically,the voltage- and light intensity-dependent responsivity and detectivities of the Schottky and Ohmic contacted devices were measured and discussed under the consideration of different voltages and UV light intensities.
Accession Number: WOS:000526842500005
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Li, Xiaohang H-3403-2016 0000-0002-4434-365X
ISSN: 0022-3727
eISSN: 1361-6463
Full Text: https://iopscience.iop.org/article/10.1088/1361-6463/ab596f