Author(s): Li, J (Li, Jing); Xi, X (Xi, Xin); Lin, S (Lin, Shan); Ma, ZH (Ma, Zhanhong); Li, XD (Li, Xiaodong); Zhao, LX (Zhao, Lixia)
Source: ACS APPLIED MATERIALS & INTERFACES Volume: 12 Issue: 10 Pages: 11965-11971 DOI: 10.1021/acsami.9b22651 Published: MAR 11 2020
Abstract: Integration of graphene with three-dimensional semiconductors can introduce unique optical and electrical properties that overcome the intrinsic limitation of the materials. Here, we report on the high sensitivity ultraviolet (UV) photodetectors based on monolayer graphene/nanoporous GaN heterojunctions. By investigating the reflectivity, photoluminescence, and Raman spectral characteristics of nanoporous GaN, we find that the increase in the porosity can help to improve its optical properties. The device based on the highest-porosity nanoporous GaN demonstrates rapid and linear response to UV photons, with an ultrahigh detectivity of 1.0 X 10(17) Jones and a UV-visible rejection ratio of 4.8 X 10(7) at V = -1.5 V. We attribute such high sensitivity to the combination of the significantly enhanced light harvesting of high-porosity nanoporous GaN and the unique UV absorption, high mobility, and finite density of states of the monolayer graphene. The high performance together with a simple and low-cost fabrication process endow these graphene/nanoporous GaN heterojunctions with great potential for future selective detection of weak UV optical signals.
Accession Number: WOS:000526609100067
PubMed ID: 32072811
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
zhao, lixia 0000-0002-0466-247X
ISSN: 1944-8244
eISSN: 1944-8252
Full Text: https://pubs.acs.org/doi/10.1021/acsami.9b22651