Author(s): Zhao, MH (Zhao, Menghan); Xue, ZY (Xue, Zhongying); Zhu, W (Zhu, Wei); Wang, G (Wang, Gang); Tang, SW (Tang, Shiwei); Liu, ZD (Liu, Zhiduo); Guo, QL (Guo, QInglei); Chen, D (Chen, Da); Chu, P (Chu, Paul K.); Ding, GQ (Ding, Guqiao); Di, ZF (Di, Zengfeng)
Source: ACS APPLIED MATERIALS & INTERFACES Volume: 12 Issue: 13 Pages: 15606-15614 DOI: 10.1021/acsami.0c02485 Published: APR 1 2020
Abstract: Three-dimensional graphene (3D-Gr) with excel- lent light absorption properties has received enormous interest, but in conventional processes to prepare 3D-Gr, amorphous carbon layers are inevitably introduced as buffer layers that may degrade the performance of graphene-based devices. Herein, 3D-Gr is prepared on germanium (Ge) using two-dimensional graphene (2D-Gr) as the buffer layer. 2D-Gr as the buffer layer facilitates the in situ synthesis of 3D-Gr on Ge by plasma-enhanced chemical vapor deposition (PECVD) by promoting 2D-Gr nucleation and reducing the barrier height.The growth mechanism is investigated and described. The enhanced light absorption as confirmed by theoretical calculation and 3D-Gr/2D-Gr/Ge with a Schottky junction improves the performance of optoelectronic devices without requiring pre- and post-transfer processes. The photodetector constructed with 3D-Gr/2D-Gr/Ge shows an excellent responsivity of 1.7 A W-1 and detectivity 3.42 x 10(14) cm H-1/2 W-1 at a wavelength of 1550 nm. This novel hybrid structure that incorporates 3D- and 2D-Gr into Ge-based integrated circuits and photodetectors delivers excellent performance and has large commercial potential.
Accession Number: WOS:000526566900100
PubMed ID: 32157866
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Ding, Guqiao 0000-0003-1674-3477
Chu, Paul B-5923-2013 0000-0002-5581-4883
Tang, Shiwei 0000-0003-3124-0165
ISSN: 1944-8244
eISSN: 1944-8252
Full Text: https://pubs.acs.org/doi/10.1021/acsami.0c02485