Author(s): Xue, YZ (Xue, Yongzhou); Wang, H (Wang, Hui); Xie, N (Xie, Nan); Yang, Q (Yang, Qian); Xu, FJ (Xu, Fujun); Shen, B (Shen, Bo); Shi, JJ (Shi, Jun-Jie); Jiang, DS (Jiang, Desheng); Dou, XM (Dou, Xiuming); Yu, TJ (Yu, Tongjun); Sun, BQ (Sun, Bao-Quan)
Source: JOURNAL OF PHYSICAL CHEMISTRY LETTERS Volume: 11 Issue: 7 Pages: 2689-2694 DOI: 10.1021/acs.jpclett.0c00511 Published: APR 2 2020
Abstract: Quantum technologies require robust and photostable single-photon emitters. Here, room temperature operated single-photon emissions from isolated defects in aluminum nitride (AlN) films are reported. AlN films were grown on nanopatterned sapphire substrates by metal organic chemical vapor deposition. The observed emission lines range from visible to near-infrared, with highly linear polarization characteristics. The temperature-dependent line width increase shows T-3 or single-exponential behavior. First-principle calculations based on density functional theory show that point defect species, such as antisite nitrogen vacancy complex (NAlVN) and divacancy (VAlVN) complexes, are considered to be an important physical origin of observed emission lines ranging from approximately 550 to 1000 nm. The results provide a new platform for on-chip quantum sources.
Accession Number: WOS:000526348400042
PubMed ID: 32186889
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Xu, Fujun 0000-0002-0751-6566
ISSN: 1948-7185
Full Text: https://pubs.acs.org/doi/10.1021/acs.jpclett.0c00511