Author(s): Huang, ZX (Huang, Zongxing); Zhong, ZB (Zhong, Zhibai); Wang, HC (Wang, Huachun); Lu, SQ (Lu, Shiqiang); Wang, J (Wang, Jun); Liu, GZ (Liu, Guozhen); Wei, TB (Wei, Tongbo); Yan, JC (Yan, Jianchang); Min, JH (Min, Jung-Hong); Jeong, WL (Jeong, Woo Lim); Lee, DS (Lee, Dong-Seon); Cai, XF (Cai, Xuefen); Xu, FC (Xu, Fuchun); Chen, XH (Chen, Xiaohong); Cai, DJ (Cai, Duanjun); Wang, JX (Wang, Junxi); Kang, JY (Kang, Junyong)
Source: JOURNAL OF PHYSICAL CHEMISTRY LETTERS Volume: 11 Issue: 7 Pages: 2559-2569 DOI: 10.1021/acs.jpclett.0c00653 Published: APR 2 2020
Abstract: Deep ultraviolet light-emitting diodes (DUV LEDs) (<280 nm) have been important light sources for broad applications in, e.g., sterilization, purification, and high-density storage.However, the lack of excellent transparent electrodes in the DUV region remains a challenging issue. Here, we demonstrate an architectural engineering scheme to flexibly tune the work function of Cu@shell nanowires (NWs) as top transparent electrodes in DUV LEDs. By fast encapsulation of shell metals on Cu NWs and a shift of electron binding energy, the electronic work function could be widely tailored down to 4.37 eV and up to 5.73 eV. It is revealed that the high work function of Cu@Ni and Cu@Pt NWs could overcome the interfacial barrier to p-AlGaN and achieve direct ohmic contact with high transparency (91%) in 200-400 nm. Completely transparent DUV LED chips are fabricated and successfully lighted with sharp top emission (wall-plug efficiency reaches 3%) under a turn-on voltage of 6.4 V. This architectural strategy is of importance in providing highly transparent ohmic electrodes for optoelectronic devices in broad wavelength regions.
Accession Number: WOS:000526348400025
PubMed ID: 32141757
Author Identifiers:
AuthorWeb of Science ResearcherIDORCID Number
Cai, Xuefen 0000-0003-1707-3444
ISSN: 1948-7185
Full Text: https://pubs.acs.org/doi/10.1021/acs.jpclett.0c00653