Author(s): Ren, ZY (Ren, Zengyao); Wang, MX (Wang, Mengxi); Liu, PF (Liu, Pengfei); Liu, Q (Liu, Qi); Wang, KY (Wang, Kaiyou); Jakob, G (Jakob, Gehard); Chen, JK (Chen, Jikun); Meng, KK (Meng, Kangkang); Xu, XG (Xu, Xiaoguang); Miao, J (Miao, Jun); Jiang, Y (Jiang, Yong)
Source: ADVANCED ELECTRONIC MATERIALS Article Number: 2000102 DOI: 10.1002/aelm.202000102 Early Access Date: APR 2020
Abstract: In the field of memory and spin-logical devices, multiferroics have the potentials of low-energy informational operation. A novel memory and logic device in a PbZr0.2Ti0.8O3/Co/Pt (PZT/Co/Pt) multiferroic heterostructure with perpendicular magnetic anisotropy (PMA) is proposed. The PMA of PZT/Co/Pt structure can be modulated via the PZT/Co interface by switching the polarization field in the PZT layer. Moreover, the anomalous Hall voltage (AHV) under downward polarization is about 63% higher than that under upward polarization at 50 K without magnetic field. Interestingly, this AHV modulation is reversible, fast, and nonvolatile. Furthermore, the multiferroic random access memory and logic device operations are demonstrated based on the ferroelectric-modulated AHV, which can lower the operating current density. This nonvolatile manipulation via ferroelectric polarizations will offer a new pathway to improve spintronic and spin-logical applications.
Accession Number: WOS:000527697900001
ISSN: 2199-160X
Full Text: https://onlinelibrary.wiley.com/doi/abs/10.1002/aelm.202000102