Author(s): Lv, QS (Lv, Quanshan); Yan, FG (Yan, Faguang); Mori, N (Mori, Nobuya); Zhu, WK (Zhu, Wenkai); Hu, C (Hu, Ce); Kudrynskyi, ZR (Kudrynskyi, Zakhar R.); Kovalyuk, ZD (Kovalyuk, Zakhar D.);Patane, A (Patane, Amalia); Wang, KY (Wang, Kaiyou)
Source: ADVANCED FUNCTIONAL MATERIALS Volume: 30 Issue: 15 Article Number: 1910713 DOI: 10.1002/adfm.201910713 Early Access Date: FEB 2020 Published: APR 2020
Abstract: Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field-effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device requires a precise energy band alignment of the different layers of the junction to optimize the tunnel current. Among 2D vdW materials, black phosphorus (BP) and indium selenide (InSe) have a Brillouin zone-centered conduction and valence bands, and a type II band offset, both ideally suited for band-to-band tunneling. TFETs based on BP/InSe heterojunctions with diverse electrical transport characteristics are demonstrated: forward rectifying, Zener tunneling, and backward rectifying characteristics are realized in BP/InSe junctions with different thickness of the BP layer or by electrostatic gating of the junction. Electrostatic gating yields a large on/off current ratio of up to 10(8) and negative differential resistance at low applied voltages (V approximate to 0.2 V). These findings illustrate versatile functionalities of TFETs based on BP and InSe, offering opportunities for applications of these 2D materials beyond the device architectures reported in the current literature.
Accession Number: WOS:000525746600001
ISSN: 1616-301X
eISSN: 1616-3028
Full Text: https://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201910713