Author(s): Li, Y (Li, Ying); Wei, X (Wei, Xia); Ye, JL (Ye, Jialiang); Zhai, GH (Zhai, Guihao); Wang, KY (Wang, Kaiyou); Zhang, XH (Zhang, Xinhui)
Source: AIP ADVANCES Volume: 10 Issue: 4 DOI: 10.1063/1.5144070 Published: APR 1 2020
Abstract: We have studied the spin relaxation dynamics in both n- and p-type layered bulk WSe2 under a perpendicular electric field by employing time-resolved Kerr rotation and helicity-resolved transient reflection measurements. The experimental results reveal the efficient tuning of spin relaxation time from 3 ps to 46 ps by the external electric field at 10 K. The dependence of spin relaxation time on the external electric field is understood based on active interlayer hopping. These studies demonstrate the gate-tunable spin polarization and relaxation in bulk transition metal dichalcogenides (TMDCs), which are fundamentally important for understanding spin dynamics and the practical design of spintronic devices based on bulk TMDCs.
Accession Number: WOS:000526755400004
eISSN: 2158-3226
Full Text: https://aip.scitation.org/doi/10.1063/1.5144070