Author(s): Wang, H (Wang, Hong); Yang, NN (Yang, Ningning); Chang, LM (Chang, Limin); Zhou, CB (Zhou, Chaobiao); Li, SY (Li, Shiyu); Deng, M (Deng, Meng); Li, ZW (Li, Zhenwei); Liu, Q (Liu, Qiang); Zhang, C (Zhang, Chi); Li, ZY (Li, Zhiyong); Wang, Y (Wang, Yi)
Source: PHOTONICS RESEARCH Volume: 8 Issue: 4 Pages: 468-474 DOI: 10.1364/PRJ.380170 Published: APR 1 2020
Abstract: Graphene resting on a silicon-on-insulator platform offers great potential for optoelectronic devices. In the paper, we demonstrate all-optical modulation on the graphene-silicon hybrid waveguides (GSHWs) with tens of micrometers in length. Owing to strong interaction between graphene and silicon strip waveguides with compact light confinement, the modulation depth reaches 22.7% with a saturation threshold down to 1.38 pJ per pulse and a 30-mu m-long graphene pad. A response time of 1.65 ps is verified by a pump-probe measurement with an energy consumption of 2.1 pJ. The complementary metal-oxide semiconductor compatible GSHWs with the strip configuration exhibit great potential for ultrafast and broadband all-optical modulation, indicating that employing two-dimensional materials has become a complementary technology to promote the silicon photonic platform. (C) 2020 Chinese Laser Press
Accession Number: WOS:000523260600005
ISSN: 2327-9125
Full Text: https://www.osapublishing.org/prj/abstract.cfm?uri=prj-8-4-468