Author(s): Liu, XQ (Liu, Xiangquan); Zheng, J (Zheng, Jun); Li, MM (Li, Mingming); Peng, LZ (Peng, Linzhi); Wang, N (Wang, Nan); Li, XL (Li, Xiuli); Zuo, YH (Zuo, Yuhua); Liu, Z (Liu, Zhi); Xue, CL (Xue, Chunlai); Cheng, BW (Cheng, Buwen)
Source: JOURNAL OF ALLOYS AND COMPOUNDS Volume: 829 Article Number: 154505 DOI: 10.1016/j.jallcom.2020.154505 Published: JUL 15 2020
Abstract: Single crystalline Ge1-x-ySnxPby alloys were grown on Ge/Si(100) substrates by a sputtering epitaxy method. Cross-sectional transmission electron microscopy revealed that no segregation of Sn and Pb occurred in these high quality alloys. The maximum Pb content of 1.7% was achieved, indicating that the co-introduction of Sn and Pb was a viable strategy to increase the Pb content in the Ge matrix. The thermal stability of the Ge1-x-ySnxPby (x < 0.081, y < 0.017) alloys revealed that the critical temperature for surface segregation was affected by not only the Pb content but also the Sn content. The direct bandgaps of the Ge1-x-ySnxPby alloys were calculated by the fitting of the absorption coefficient and the theoretical prediction indicated that the alloys have great potential for the application in efficient silicon-based optoelectronic devices. (C) 2020 Elsevier B.V. All rights reserved.
Accession Number: WOS:000523555300053
ISSN: 0925-8388
eISSN: 1873-4669
Full Text: https://www.sciencedirect.com/science/article/pii/S0925838820308689?via%3Dihub